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Research Article | Open Access

Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Jing YANa,b,cYanling WANGdChun-Ming WANGeJun OUYANGb( )
Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China
Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Shandong Provincial Key Laboratory of Molecular Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
College of Physics and Electronic Engineering, Qilu Normal University, Jinan 250013, China
Amperex Technology Limited, Ningde 352100, China
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge–discharge cycles) and a good thermal stability (from –170 to 150 ℃) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.


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Journal of Advanced Ceramics
Pages 627-635
Cite this article:
YAN J, WANG Y, WANG C-M, et al. Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing. Journal of Advanced Ceramics, 2021, 10(3): 627-635.








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Received: 28 September 2020
Revised: 09 January 2021
Accepted: 26 January 2021
Published: 05 March 2021
© The Author(s) 2021

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