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Rare earth (RE = La3+, Sm3+, Pr3+) ion doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (RE-PMN-PT) ferroelectric thin films with compositions near the morphotropic phase boundary were grown on the Pt/TiO2/SiO2/Si(100) substrate using sol-gel/spin coating method. The phase structure, electrical properties, and photoluminescence performance of thin films were investigated systematically. The highly (100)-preferred orientation was obtained in pure perovskite Sm-PMN-0.30PT thin films with an average grain size of 131 nm. After 2.5% Sm3+ doping, the PMN-0.30PT thin films exhibited a triple enhancement of dielectric permittivity with a maximum value of 3500 at 1 kHz, a low dielectric loss of 1.3%, and high remanent polarization of 17.5 μC/cm2 at room temperature. In visible light and near-infrared band, the transmittance rate increased with PT content and showed the highest value of 85% in 2.5%Sm-PMN-0.31PT. In addition, the films presented strong red-orange emission at 599 nm, which was sensitively in temperature range of 248-273 K corresponding to the rhombohedral to monoclinic phase transition temperature.


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Enhanced dielectric, ferroelectric, and optical properties in rare earth elements doped PMN-PT thin films

Show Author's information Shun ZHOUaDabin LINa( )Yongming SUaLin ZHANGb( )Weiguo LIUa
Thin Film and Optical Manufacturing Technology, Key Laboratory of Ministry of Education, Xi’an Technological University, Xi’an 710032, China
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Abstract

Rare earth (RE = La3+, Sm3+, Pr3+) ion doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (RE-PMN-PT) ferroelectric thin films with compositions near the morphotropic phase boundary were grown on the Pt/TiO2/SiO2/Si(100) substrate using sol-gel/spin coating method. The phase structure, electrical properties, and photoluminescence performance of thin films were investigated systematically. The highly (100)-preferred orientation was obtained in pure perovskite Sm-PMN-0.30PT thin films with an average grain size of 131 nm. After 2.5% Sm3+ doping, the PMN-0.30PT thin films exhibited a triple enhancement of dielectric permittivity with a maximum value of 3500 at 1 kHz, a low dielectric loss of 1.3%, and high remanent polarization of 17.5 μC/cm2 at room temperature. In visible light and near-infrared band, the transmittance rate increased with PT content and showed the highest value of 85% in 2.5%Sm-PMN-0.31PT. In addition, the films presented strong red-orange emission at 599 nm, which was sensitively in temperature range of 248-273 K corresponding to the rhombohedral to monoclinic phase transition temperature.

Keywords:

PMN-PT, rare earth doping, dielectric, ferroelectric, photoluminescence
Received: 07 April 2020 Revised: 15 September 2020 Accepted: 15 September 2020 Published: 05 November 2020 Issue date: February 2021
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Publication history
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Publication history

Received: 07 April 2020
Revised: 15 September 2020
Accepted: 15 September 2020
Published: 05 November 2020
Issue date: February 2021

Copyright

© The Author(s) 2020

Acknowledgements

We appreciate the funding from the National Natural Science Foundation of China (Nos. 51502232 and 51972263), National Basic Research Project (No. JCKY2016208A002), and Advanced Manufacturing Project (No. 41423020111).

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