434
Views
34
Downloads
50
Crossref
N/A
WoS
53
Scopus
6
CSCD
The non-stoichiometric Li3Mg2Sb1-xO6 (0.05 ≤ x ≤ 0.125) compounds have been prepared via the mixed oxide method. The influences of Sb nonstoichiometry on the sintering behavior, microstructure, phase composition along with microwave dielectric performances for Li3Mg2Sb1-xO6 ceramics were studied. Combined with X-ray diffraction (XRD) and Raman spectra, it was confirmed that phase composition could not be affected by the Sb nonstoichiometry and almost pure phase Li3Mg2SbO6 was formed in all compositions. Appropriate Sb-deficiency in Li3Mg2SbO6 not only lowered its sintering temperature but also remarkably improved its Q×f value. In particular, non-stoichiometric Li3Mg2Sb0.9O6 ceramics sintered at 1250 ℃/5 h owned seldom low dielectric constant εr = 10.8, near-zero resonant frequency temperature coefficient τf = -8.0 ppm/℃, and high quality factor Q×f = 86,300 GHz (at 10.4 GHz). This study provides an alternative approach to ameliorate its dielectric performances for Li3Mg2SbO6-based compounds through defect-engineering.
The non-stoichiometric Li3Mg2Sb1-xO6 (0.05 ≤ x ≤ 0.125) compounds have been prepared via the mixed oxide method. The influences of Sb nonstoichiometry on the sintering behavior, microstructure, phase composition along with microwave dielectric performances for Li3Mg2Sb1-xO6 ceramics were studied. Combined with X-ray diffraction (XRD) and Raman spectra, it was confirmed that phase composition could not be affected by the Sb nonstoichiometry and almost pure phase Li3Mg2SbO6 was formed in all compositions. Appropriate Sb-deficiency in Li3Mg2SbO6 not only lowered its sintering temperature but also remarkably improved its Q×f value. In particular, non-stoichiometric Li3Mg2Sb0.9O6 ceramics sintered at 1250 ℃/5 h owned seldom low dielectric constant εr = 10.8, near-zero resonant frequency temperature coefficient τf = -8.0 ppm/℃, and high quality factor Q×f = 86,300 GHz (at 10.4 GHz). This study provides an alternative approach to ameliorate its dielectric performances for Li3Mg2SbO6-based compounds through defect-engineering.
The authors acknowledge the support from the National Natural Science Foundation of China (Grant No. 51402235), China Postdoctoral Science Foundation (2015M582696), Science and Technology Plan Project of Xi'an Bureau of Science and Technology (GXYD17.19), Education Department of Shaanxi Province (18JK0711), and Innovation Funds of Graduate Programs of Xi'an University of Posts and Telecommunications (CXJJLD2019020).
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made.
The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
To view a copy of this licence, visit http://creativecommons. org/licenses/by/4.0/.