Journal Home > Volume 8 , Issue 3
Journal of Advanced Ceramics 2019, 8(3): 408-417 https://doi.org/10.1007/s40145-019-0323-7
Research Article | Open Access | Issue | Published: 26 July 2019

Influence of processing on microstructure and electrical characteristics of multilayer varistors

Show Author's Information D. SZWAGIERCZAK( ),  J. KULAWIK,  A. SKWAREK
Institute of Electron Technology, Kraków Division, Zabłocie 39, 30-701 Kraków, Poland
Keywords:
microstructure, multilayer varistor, tape casting, current-voltage characteristic
Cite this article:
SZWAGIERCZAK D, KULAWIK J, SKWAREK A. Influence of processing on microstructure and electrical characteristics of multilayer varistors. Journal of Advanced Ceramics, 2019, 8(3): 408-417. https://doi.org/10.1007/s40145-019-0323-7
Download citation
EndNote(RIS)
BibTeX

599

Views

25

Downloads

Citations

25

Crossref

N/A

WoS

27

Scopus

1

CSCD

Abstract Full text About this article

The paper reports on the influence of processing on microstructure and electrical properties of multilayer varistors based on zinc oxide doped with Bi2O3, Sb2O3, Co2O3, MnO, Cr2O3, B2O3, and SiO2. 0.5-1 wt% of AlF3-CaB4O7 was used as a new effective sintering aid. The behavior of green laminates during heating was characterized using differential thermal analysis and a heating microscope. As revealed by XRD, SEM, and EDS methods, the varistor layers are composed of ZnO grains of 1-5 μm size, submicrometer spinel and pyrochlore grains situated at the ZnO grain boundaries, and nanometric Bi2O3-rich films surrounding ZnO grains. Complex impedance studies carried out in the frequency range of 0.01 Hz-2 MHz at temperatures changing from -30 to 150 ℃ imply the formation of semiconducting grains and insulating grain boundaries. Frequency dependence of dielectric permittivity shows a high plateau at lower frequencies, typical for barrier layer capacitance effect. The fabricated multilayer varistors show nonlinear current-voltage characteristics with a high nonlinear coefficient of 26-38. The breakdown voltage was found to decrease within the range of 66-130 V with sintering temperature increasing from 1000 to 1100 ℃. Good surge current capability of the varistors was confirmed by the tests using 8/20 μs pulses.


menu
Abstract
Full text
Outline
About this article

Influence of processing on microstructure and electrical characteristics of multilayer varistors

Show Author's information D. SZWAGIERCZAK( ), J. KULAWIK, A. SKWAREK
Institute of Electron Technology, Kraków Division, Zabłocie 39, 30-701 Kraków, Poland

Abstract

The paper reports on the influence of processing on microstructure and electrical properties of multilayer varistors based on zinc oxide doped with Bi2O3, Sb2O3, Co2O3, MnO, Cr2O3, B2O3, and SiO2. 0.5-1 wt% of AlF3-CaB4O7 was used as a new effective sintering aid. The behavior of green laminates during heating was characterized using differential thermal analysis and a heating microscope. As revealed by XRD, SEM, and EDS methods, the varistor layers are composed of ZnO grains of 1-5 μm size, submicrometer spinel and pyrochlore grains situated at the ZnO grain boundaries, and nanometric Bi2O3-rich films surrounding ZnO grains. Complex impedance studies carried out in the frequency range of 0.01 Hz-2 MHz at temperatures changing from -30 to 150 ℃ imply the formation of semiconducting grains and insulating grain boundaries. Frequency dependence of dielectric permittivity shows a high plateau at lower frequencies, typical for barrier layer capacitance effect. The fabricated multilayer varistors show nonlinear current-voltage characteristics with a high nonlinear coefficient of 26-38. The breakdown voltage was found to decrease within the range of 66-130 V with sintering temperature increasing from 1000 to 1100 ℃. Good surge current capability of the varistors was confirmed by the tests using 8/20 μs pulses.

Keywords: microstructure, multilayer varistor, tape casting, current-voltage characteristic

References(41)

[1]
TK Gupta. Application of zinc oxide varistors. J Am Ceram Soc 1990, 73: 1817-1840.
DOI Google Scholar
[2]
DR Clarke. Varistor ceramics. J Am Ceram Soc 2004, 82: 485-502.
DOI Google Scholar
[3]
PR Bueno, JA Varela, E Longo. SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature. J Eur Ceram Soc 2008, 28: 505-529.
DOI Google Scholar
[4]
SC Pillai, JM Kelly, R Ramesh, et al. Advances in the synthesis of ZnO nanomaterials for varistor devices. J Mater Chem C 2013, 1: 3268-3281.
DOI Google Scholar
[5]
HF Zhao, J Hu, SM Chen, et al. Tailoring the high-impulse current discharge capability of ZnO varistor ceramics by doping with Ga2O3. Ceram Int 2016, 42: 5582-5586.
DOI Google Scholar
[6]
YP Wang, GZ Zhang, P Liu, et al. The clamp characteristics and DC aging behavior of ZnO-based varistor ceramics doped with Na2CO3. Ceram Int 2016, 42: 2106-2114.
DOI Google Scholar
[7]
S Pandey, D Kumar, O Parkash. Investigation of the electrical properties of liquid-phase sintered ZnO-V2O5 based varistor ceramics using impedance and dielectric spectroscopy. J Mater Sci: Mater Electron 2016, 27: 3748-3758.
DOI Google Scholar
[8]
CW Nahm. Effect of dopant (Al, Nb, Bi, La) on varistor properties of ZnO-V2O5-MnO2-Co3O4-Dy2O3 ceramics. Ceram Int 2010, 36: 1109-1115.
DOI Google Scholar
[9]
HR Bai, MH Zhang, ZJ Xu, et al. The effect of SiO2 on electrical properties of low-temperature-sintered ZnO-Bi2O3-TiO2-Co2O3-MnO2-based ceramics. J Am Ceram Soc 2017, 100: 1057-1064.
DOI Google Scholar
[10]
S Ezhilvalavan, TRN Kutty. Dependence of non-linearity coefficients on transition metal oxide concentration in simplified compositions of ZnO+Bi2O3+MO varistor ceramics (M=Co or Mn). J Mater Sci: Mater Electron 1996, 7: 137-148.
DOI Google Scholar
[11]
JN Cai, YH Lin, M Li, et al. Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor. J Am Ceram Soc 2007, 90: 291-294.
DOI Google Scholar
[12]
M Peiteado, Y Reyes, AM Cruz, et al. Microstructure engineering to drastically reduce the leakage currents of high voltage ZnO varistor ceramics. J Am Ceram Soc 2012, 95: 3043-3049.
DOI Google Scholar
[13]
S Ma, ZJ Xu, RQ Chu, et al. Low-temperature sintering and electrical properties of Co-doped ZnO varistors. J Mater Sci: Mater Electron 2014, 25: 3878-3884.
DOI Google Scholar
[14]
JF Zhu, GQ Qi, HB Yang, et al. Microstructure and electrical properties of Pr6O11 doped ZnO-Bi2O3-based varistors. J Mater Sci: Mater Electron 2011, 22: 96-100.
DOI Google Scholar
[15]
J Wu, T Qi, TT Li, et al. The AC impedance and variable temperature dielectric spectroscopic analysis of MnO2 doped and un-doped ZnO-V2O5 ceramics. J Mater Sci: Mater Electron 2012, 23: 1143-1150.
DOI Google Scholar
[16]
XK Xiao, LY Zheng, LH Cheng, et al. Effect of Cr2O3 on the property and microstructure of ZnO-Bi2O3 varistor ceramics in different sintering temperature. Ceram Int 2015, 41: S557-S562.
DOI Google Scholar
[17]
C Tsonos, A Kanapitsas, D Triantis, et al. Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor. Ceram Int 2011, 37: 207-214.
DOI Google Scholar
[18]
A Sedky, TA El-Brolossy, SB Mohamed. Correlation between sintering temperature and properties of ZnO ceramic varistors. J Phys Chem Solids 2012, 73: 505-510.
DOI Google Scholar
[19]
PR Bueno, ER Leite, MM Oliveira, et al. Role of oxygen at the grain boundary of metal oxide varistors: A potential barrier formation mechanism. Appl Phys Lett 2001, 79: 48-50.
DOI Google Scholar
[20]
MA Ramírez, AZ Simões, MA Márquez, et al. Characterization of ZnO-degraded varistors used in high-tension devices. Mater Res Bull 2007, 42: 1159-1168.
DOI Google Scholar
[21]
T Chen, H Zu, C Gao, et al. Preparation and electrical properties of ZnO-Bi2O3-based multilayer varistors with base metal nickel inner electrodes. J Am Ceram Soc 2017, 100: 3024-3032.
DOI Google Scholar
[22]
S Hirose, K Nishita, H Niimi. Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO-based multilayered chip varistor. J Appl Phys 2006, 100: 083706.
DOI Google Scholar
[23]
WS Lee, WT Chen, YC Lee, et al. Influence of sintering on microstructure and electrical properties of ZnO-based multilayer varistor (MLV). Ceram Int 2007, 33: 1001-1005.
DOI Google Scholar
[24]
S Hirose, H Niimi, K Kageyama, et al. Degradation of potential barriers in ZnO-based chip varistors due to electrostatic discharge. J Appl Phys 2012, 112: 033707.
DOI Google Scholar
[25]
WH Lee, WT Chen, YC Lee, et al. Relationship between microstructure and electrical properties of ZnO-based multilayer varistor. Jpn J Appl Phys 2006, 45: 5126-5131.
DOI Google Scholar
[26]
S Wan, WZ Lu, XC Wang. Low-temperature sintering and electrical properties of ZnO-Bi2O3-TiO2-Co2O3-MnCO3- based varistor with Bi2O3-B2O3 frit for multilayer chip varistor applications. J Am Ceram Soc 2010, 93: 3319-3323.
DOI Google Scholar
[27]
WH Pan, ST Kuo, WH Tuan, et al. Microstructure-property relationships for low-voltage varistors. Int J Appl Ceram Technol 2009, 7: E80-E88.
DOI Google Scholar
[28]
ST Kuo, WH Tuan, YW Lao, et al. Grain growth behavior of Bi2O3-doped ZnO grains in a multilayer varistor. J Am Ceram Soc 2008, 91: 1572-1579.
DOI Google Scholar
[29]
ST Kuo, WH Tuan, YW Lao, et al. Inner electrodes for multilayer varistors. Int J Appl Ceram Technol 2009, 6: 223-230.
DOI Google Scholar
[30]
ST Kuo, WH Tuan. Grain growth behaviour of ZnO-based multilayer varistors. J Eur Ceram Soc 2010, 30: 525-530.
DOI Google Scholar
[31]
M Peiteado, MA de la Rubia, J de Frutos, et al. ZnO-based varistor thick films with high non-linear electrical behavior. J Electroceram 2009, 23: 62-66.
DOI Google Scholar
[32]
LY Wang, GY Tang, ZK Xu. Preparation and electrical properties of multilayer ZnO varistors with water-based tape casting. Ceram Int 2009, 35: 487-492.
DOI Google Scholar
[33]
J Kulawik, D Szwagierczak, B Synkiewicz. Tape casting and properties of Pr2O3-doped ZnO multilayer varistors. Microelectron Int 2014, 31: 163-168.
DOI Google Scholar
[34]
J Kulawik, D Szwagierczak, A Skwarek. Electrical and microstructural characterization of doped ZnO based multilayer varistors. Microelectron Int 2017, 34: 116-120.
DOI Google Scholar
[35]
G Manoharan, M Karuppiah, NK Sahu, et al. High performance multi-layer varistor (MLV) from doped ZnO nanopowders by water based tape casting: Rheology, sintering, microstructure and properties. Ceram Int 2018, 44: 7837-7843.
DOI Google Scholar
[36]
DQ Tan, P Chapman Irvin, A Younsi. Electronic device and method. US Patent 82117751. 2012.
[37]
N Okamoto, H Ito, T Kida. Sintered body for varistor, multilayer substrate using same, and production method for these. US Patent 9741477 B2. 2017.
[38]
CH Lien, JA Zhu, ZX Xu, et al. Multilayer varistor and process for producing the same. US Patent 9947444B1. 2018.
[39]
O Dernovsek, J Koholka. Method for producing a multi-layer varistor component and multi-layer varistor component. US Patent, 9875831 B. 2018.
[40]
ZJ Xu, HR Bai, S Ma, et al. Effect of a Bi-Cr-O synthetic multi-phase on the microstructure and electrical properties of ZnO-Bi2O3 varistor ceramics. Ceram Int 2016, 42: 14350-14354.
DOI Google Scholar
[41]
M Hofstätter, A Nevosad, C Teichert, et al. Voltage polarity dependent current paths through polycrystalline ZnO varistors. J Eur Ceram Soc 2013, 33: 3473-3476.
DOI Google Scholar
Publication history
Copyright
Acknowledgements
Rights and permissions

Publication history

Received: 11 September 2018
Revised: 18 February 2019
Accepted: 09 March 2019
Published: 26 July 2019
Issue date: September 2019

Copyright

© The author(s) 2019

Acknowledgements

The work has been supported by the National Science Centre, Poland, under the Grant No. 2015/17/D/ST7/04141.

Rights and permissions

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made.

The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.

To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

Return