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Journal of Advanced Ceramics 2017, 6(3): 196-206 https://doi.org/10.1007/s40145-017-0231-7
Research Article | Open Access | Issue | Published: 29 September 2017

Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping

Show Author's Information Chuanshuo ZHANGa,  Dongli HUa,b( ),  Hui GUa,b,  Juanjuan XINGa,b,  Ping XIONGa,  Dongyun WANa,  Yanfeng GAOa
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
Materials Genome Institute, Shanghai University, Shanghai 200444, China
Keywords:
transmission electron microscopy (TEM), crystallization, VO2(B) thin film, layered W-doping, solid-solution
Cite this article:
ZHANG C, HU D, GU H, et al. Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping. Journal of Advanced Ceramics, 2017, 6(3): 196-206. https://doi.org/10.1007/s40145-017-0231-7
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Abstract Full text About this article

To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached -4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 ℃, to better control the crystallization behavior. Various transmission electron microscopy (TEM) methods were employed to investigate three sets of multi-layered films with different deposition time, 10, 20, and 30 min, with especial emphasis on the effect of layered W-doping scheme on the formation of multiple VO2(B) layers. Spatial-resolved energy dispersive X-ray spectroscopy (EDS) revealed the alternative patterns of W-rich layers and W-poor layers, while the thinner films exhibited better crystallinity and texturing. By comparison with an as-deposited film, it was found that the inter-diffusion between the two types of layers was completed in the deposition step while both remained in amorphous structure. A stable W solution of about 8 cat% in VO2(B) layers measured from all these films indicated that the layered doping can tailor the multi-layered microstructure to optimize the performance of VO2(B) films.


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About this article

Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping

Show Author's information Chuanshuo ZHANGa, Dongli HUa,b( ), Hui GUa,b, Juanjuan XINGa,b, Ping XIONGa, Dongyun WANa, Yanfeng GAOa
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
Materials Genome Institute, Shanghai University, Shanghai 200444, China

Abstract

To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached -4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 ℃, to better control the crystallization behavior. Various transmission electron microscopy (TEM) methods were employed to investigate three sets of multi-layered films with different deposition time, 10, 20, and 30 min, with especial emphasis on the effect of layered W-doping scheme on the formation of multiple VO2(B) layers. Spatial-resolved energy dispersive X-ray spectroscopy (EDS) revealed the alternative patterns of W-rich layers and W-poor layers, while the thinner films exhibited better crystallinity and texturing. By comparison with an as-deposited film, it was found that the inter-diffusion between the two types of layers was completed in the deposition step while both remained in amorphous structure. A stable W solution of about 8 cat% in VO2(B) layers measured from all these films indicated that the layered doping can tailor the multi-layered microstructure to optimize the performance of VO2(B) films.

Keywords: transmission electron microscopy (TEM), crystallization, VO2(B) thin film, layered W-doping, solid-solution

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Publication history
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Publication history

Received: 25 February 2017
Revised: 19 April 2017
Accepted: 13 May 2017
Published: 29 September 2017
Issue date: September 2017

Copyright

© The author(s) 2017

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China under Grant Nos. 51532006 and 51325203, Shanghai Municipal Science and Technology Commission of Shanghai Municipality under Grant No. 16DZ2260600, and the 111 Project (D16002). We are grateful to the Shanghai Institute of Ceramics for technical assistance in TEM and SEM experiments, as well as to Prof. R. Huang of East China Normal University for TEM specimen preparations.

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