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Research Article | Open Access

Oxidation mechanism of aluminum nitride revisited

Chun-Ting YEH, Wei-Hsing TUAN( )
Department of Materials Science and Engineering, “National Taiwan University”, Taipei, Taiwan 106, China
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Abstract

Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 ℃. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 ℃. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.

Keywords

aluminum nitrideoxidation mechanismdiffusionreaction

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Journal of Advanced Ceramics
Volume 6 Issue 1,
March 2017
Pages 27-32
DOI: 10.1007/s40145-016-0213-1
Cite this article:
YEH C-T, TUAN W-H. Oxidation mechanism of aluminum nitride revisited. Journal of Advanced Ceramics, 2017, 6(1): 27-32. https://doi.org/10.1007/s40145-016-0213-1

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Received: 08 September 2017
Revised: 10 May 2017
Accepted: 10 May 2018
Published: 02 March 2017
© The author(s) 2016

Open Access The articles published in this journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons. org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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