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Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 ℃. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 ℃. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.


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Oxidation mechanism of aluminum nitride revisited

Show Author's information Chun-Ting YEHWei-Hsing TUAN( )
Department of Materials Science and Engineering, “National Taiwan University”, Taipei, Taiwan 106, China

Abstract

Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 ℃. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 ℃. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.

Keywords:

oxidation mechanism, aluminum nitride, diffusion, reaction
Received: 08 September 2017 Revised: 10 May 2017 Accepted: 10 May 2018 Published: 02 March 2017 Issue date: March 2017
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Publication history

Received: 08 September 2017
Revised: 10 May 2017
Accepted: 10 May 2018
Published: 02 March 2017
Issue date: March 2017

Copyright

© The author(s) 2016

Acknowledgements

The present study was supported by the “Ministry of Science and Technology” through the Contract No. NSC100-3113-E-002-001.

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