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Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm2 was obtained by 1-on-1 mode and its damage morphology appeared in the form of “burning crater” with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 ℃, or evaporating at 2230 ℃.


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Investigation on the laser ablation of SiC ceramics using micro-Raman mapping technique

Show Author's information Chaoli FUa,bYong YANGa( )Zhengren HUANGa( )Guiling LIUaHui ZHANGaFang JIANGaYuquan WEIaZheng JIAOb
Structural Ceramic Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
College of Environmental and Chemical Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China

Abstract

Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers, or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work, the laser ablation of SiC ceramics has been performed by using laser pulses of 12 ns duration at 1064 nm. The laser induced damage threshold (LIDT) below 0.1 J/cm2 was obtained by 1-on-1 mode and its damage morphology appeared in the form of “burning crater” with a clear boundary. Micro-Raman mapping technique was first introduced in our study on the laser ablation mechanisms of SiC surface by identifying physical and chemical changes between uninjured and laser-ablated areas. It has been concluded that during the ablation process, SiC surface mainly underwent decomposition to the elemental Si and C, accompanied by some transformation of crystal orientation. The oxidation of SiC also took place but only in small amount on the edges of target region, while there was no hint of SiO2 in the center with higher energy density, maybe because of deficiency of O2 atmosphere in the ablated area, elimination of SiO2 by carbon at 1505 ℃, or evaporating at 2230 ℃.

Keywords:

silicon carbide (SiC), laser ablation, micro-Raman mapping technique, decomposition, oxidation
Received: 13 April 2016 Revised: 25 May 2016 Accepted: 14 June 2016 Published: 21 August 2016 Issue date: September 2016
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Publication history

Received: 13 April 2016
Revised: 25 May 2016
Accepted: 14 June 2016
Published: 21 August 2016
Issue date: September 2016

Copyright

© The author(s) 2016

Acknowledgements

This work is supported by funds from the National Natural Science Foundation of China (NSFC, Contract Nos. 51102266 and 51471182).

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