AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
PDF (806.4 KB)
Collect
Submit Manuscript AI Chat Paper
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article | Open Access

Mechanically induced stiffening, thermally driven softening, and brittle nature of SiC

Dinesh VARSHNEYa( )Swarna SHRIYAaSanjay JAINaMeenu VARSHNEYbR. KHENATAc
School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India
Department of Physics, M. B. Khalsa College, Indore 452002, India
Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000, Algeria
Show Author Information

Abstract

An effective interionic potential calculation with long range Coulomb, charge transfer interaction, covalency effect, short range overlap repulsion extended, van der Waals interaction, and zero point energy effect is implemented to investigate the pressure dependent structural phase transition (ZnS-type (B3) to NaCl-type (B1) structure), and mechanical, elastic, and thermodynamic properties of silicon carbide (SiC). Both charge transfer interaction and covalency effect are important in revealing the pressure induced structural stability, Cauchy discrepancy, anisotropy factor, melting temperature, shear modulus, Young’s modulus, and Grüneisen parameter. We also present the results for the temperature dependent behaviors of normalized volume, hardness, heat capacity, and thermal expansion coefficient. SiC is mechanically stiffened and thermally softened as inferred from pressure (temperature) dependent elastic constant’s behavior. The Pugh’s ratio ϕ=BT/GH, the Poisson’s ratio ν, and the Cauchy’s pressure C12C44 for SiC ceramic confirm its brittle nature.

References

[1]
Levinshtein ME, Rumyantsev SL, Shur MS. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe. New York: Wiley, 2001.
[2]
Parfenova II. Substitutional 3d impurities in cubic silicon carbide. Semiconductors 2004, 38: 189–191.
[3]
Yoshida M, Onodera A, Ueno M, et al. Pressure-induced phase transition in SiC. Phys Rev B 1993, 48: 10587(R).
[4]
Sekine T, Kobayashi T. Shock compression of 6H polytype SiC to 160 GPa. Phys Rev B 1997, 55: 8034.
[5]
Chang KJ, Cohen ML. Ab initio pseudopotential study of structural and high-pressure properties of SiC. Phys Rev B 1987, 35: 8196.
[6]
Cheong BH, Chang KJ, Cohen ML. Pressure dependences of band gaps and optical-phonon frequency in cubic SiC. Phys Rev B 1991, 44: 1053.
[7]
Karch K, Bechstedt F, Pavone P, et al. Pressure-dependent properties of SiC polytypes. Phys Rev B 1996, 53: 13400.
[8]
Miao MS, Lambrecht WRL. Unified path for high-pressure transitions of SiC polytypes to the rocksalt structure. Phys Rev B 2003, 68: 092103.
[9]
Miao MS, Prikhodko M, Lambrecht WRL. Changes of the geometry and band structure of SiC along the orthorhombic high-pressure transition path between the zinc-blende and rocksalt structures. Phys Rev B 2002, 66: 064107.
[10]
Miao MS, Prikhodko M, Lambrecht WRL. Comment on “orthorhombic intermediate state in the zinc blende to rocksalt transformation path of SiC at high pressure”. Phys Rev Lett 2002, 88: 189601.
[11]
Durandurdu M, Drabold DA. Ab initio simulation of high-pressure phases of GaAs. Phys Rev B 2002, 66: 045209.
[12]
Durandurdu M. Pressure-induced phase transition of SiC. J Phys: Condens Matter 2004, 16: 4411.
[13]
Shimojo F, Ebbsjö I, Kalia RK, et al. Molecular dynamics simulation of structural transformation in silicon carbide under pressure. Phys Rev Lett 2000, 84: 3338.
[14]
Lu, Y-P, He D-W, Zhu J, et al. First-principles study of pressure-induced phase transition in silicon carbide. Physica B 2008, 403: 3543–3546.
[15]
Vashishta P, Kalia RK, Nakano A, et al. Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide. J Appl Phys 2007, 101: 103515.
[16]
Stillinger FH, Weber TA. Computer simulation of local order in condensed phases of silicon. Phys Rev B 1985, 31: 5262.
[17]
Oganov AR. Modern Methods of Crystal Structure Prediction. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010.
[18]
Dion M, Rydberg H, Schröder E, et al. Van der Waals density functional for general geometries. Phys Rev Lett 2004, 92: 246401.
[19]
Varshney D, Shriya S. Elastic, mechanical and thermodynamic properties at high pressures and temperatures of transition metal monocarbides. Int J Refract Met H 2013, 41: 375–401.
[20]
Hafemeister DW, Flygare WH. Outer-shell overlap integrals as a function of distance for halogen–halogen, halogen–alkali, and alkali–alkali ions in the alkali halide lattices. J Chem Phys 1965, 43: 795.
[21]
Tosi MP. Cohesion of ionic solids in the Born model. Solid State Phys 1964, 16: 1–120.
[22]
Born M, Huang K. Dynamical Theory of Crystal Lattices. Oxford: Clarendon Press, 1956.
[23]
Motida K. Szigeti charge and its correlation with hyperfine coupling constant of doped Mn2+ ion in divalent metal compounds. J Phys Soc Jpn 1980, 49: 213–217.
[24]
Motida K. Effect of covalency on phonon dispersion relations in NaCl type alkali halide crystals. J Phys Soc Jpn 1986, 55: 1636–1649.
[25]
Slater JC, Kirkwood JG. The van der Waals forces in gases. Phys Rev 1931, 37: 682.
[26]
Löwdin P-O. Quantum theory of cohesive properties of solids. Adv Phys 1956, 5: 1–171.
[27]
Singh RK. Many body interactions in binary ionic solids. Phys Rep 1982, 85: 259–401.
[28]
Varshney D, Sharma P, Kaurav N, et al. Study of elastic properties and their pressure dependence of semi magnetic semiconductors. J Phys Soc Jpn 2005, 74: 382–388.
[29]
Tessman JR, Kahn AKH, Shockley W. Electronic polarizabilities of ion in crystals. Phys Rev 1953, 92: 890.
[30]
Shannon RD. Dielectric polarizabilities of ions in oxides and fluorides. J Appl Phys 1993, 73: 348.
[31]
Weast RC. Handbook of Chemistry and Physics, 63rd edn. BocaRaton, FL, USA: CRC Press, 1982.
[32]
Aleksandrov IV, Goncharov AF, Stishov SM, et al. Equation of state and Raman scattering in cubic BN and SiC at high pressures. JETP Lett 1989, 50: 127–131.
[33]
Feldman DW, Parker JH, Choyke Jr. WJ, et al. Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R. Phys Rev 1968, 173: 787.
[34]
Liu J, Vohra YK. Raman modes of 6H polytype of silicon carbide to ultrahigh pressures: A comparison with silicon and diamond. Phys Rev Lett 1994, 72: 4105.
[35]
Wagman DD, Evans WH, Parker VB, et al. Selected values of chemical thermodynamics properties. Tables for the first thirty-four elements in the standard order of arrangement. Technical Note 270-3. U.S. Department of Commerce. Natioanl Bureau of Standards. 1968.
[36]
Lambrecht WRL, Segall B, Methfessel M, et al. Calculated elastic constants and deformation potentials of cubic SiC. Phys Rev B 1991, 44: 3685.
[37]
Murnaghan FD. The compressibility of media under extreme pressures. PNAS 1944, 30: 244–247.
[38]
Guo Y-D, Yang Z-J, Gao Q-H, et al. The phase transition, and elastic and thermodynamic properties of CaS derived from first-principles calculations. J Phys: Condens Matter 2008, 20: 115203.
[39]
Denteneer PJH, van Haeringen W. Ground-state properties of polytypes of silicon carbide. Phys Rev B 1986, 33: 2831.
[40]
Tolpygo KB. Optical, elastic and piezoelectric properties of ionic and valence crystals with ZnS-type lattice. Sov Phys Solid State 1961, 2: 2367–2376.
[41]
Arlt G, Schodder GR. Some elastic constants of silicon carbide. J Acoust Soc Am 1965, 37: 384.
[42]
Lee DH, Joannopoulos JD. Simple scheme for deriving atomic force constants: Application to SiC. Phys Rev Lett 1982, 48: 1846.
[43]
Yean DH, Riter Jr. JR. Estimates of isothermal bulk moduli for group iva crystals with the zincblende structure. J Phys Chem Solids 1971, 32: 653–655.
[44]
Carnahan RD. Elastic properties of silicon carbide. J Am Ceram Soc 1968, 51: 223–224.
[45]
Churcher N, Kunc K, Heine V. Calculated ground-state properties of silicon carbide. J Phys C: Solid State Phys 1986, 19: 4413.
[46]
Gao F, Weber WJ. Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC. Phys Rev B 2004, 69: 224108.
[47]
Tang M, Yip S. Lattice instability in β-SiC and simulation of brittle fracture. J Appl Phys 1994, 76: 2719.
[48]
Vukcevich MR. On the stability of the alkali halide lattices under hydrostatic pressure. Phys Status Solidi b 1972, 54: 435–440.
[49]
Barsch GR. Relation between third-order elastic constants of single crystals and polycrystals. J Appl Phys 1968, 39: 3780.
[50]
Hill R. The elastic behaviour of a crystalline aggregate. Proc Phys Soc A 1952, 65: 349.
[51]
Voigt W. Handbook of Crystal Physics. Leipzig: Teubner, 1928.
[52]
Reuss A. Berechnung der Fließgrenze von Mischkristallen auf Grund der Plastizitätsbedingung für Einkristalle. ZAMM-Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik 1929, 9: 49–58.
[53]
Pugh SF. Relations between the elastic moduli and the plastic properties of polycrystalline pure metals. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science: Series 7 1954, 45: 823–843.
[54]
Frantsevich N, Voronov FF, Bokuta SA. In Elastic Constants and Elastic Moduli of Metals and Insulators Handbook. Frantsevich IN, Ed. Kiev: Naukova Dumka, 1983: 60–180.
[55]
Goel S, Luo X, Reuben RL, et al. Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting. Nanoscale Res Lett 2011, 6: 589.
[56]
Patten J, Gao W, Yasuto K. Ductile regime nanomachining of single-crystal silicon carbide. J Manuf Sci Eng 2004, 127: 522–532.
[57]
Schreiber E, Anderson OL, Soga N. Elastic Constants and Their Measurements. New York: McGraw-Hill, 1973: 56–57.
[58]
Bouhemadou A, Khenata R, Kharoubi M, et al. FP-APW + lo calculations of the elastic properties in zinc-blende III-P compounds under pressure effects. Comput Mater Sci 2009, 45: 474–479.
[59]
Maachou A, Aboura H, Amrani B, et al. Structural stabilities, elastic and thermodynamic properties of Scandium Chalcogenides via first-principles calculations. Comput Mater Sci 2011, 50: 3123–3130.
[60]
Kleinman L. Deformation potentials in silicon. I. Uniaxial strain. Phys Rev 1962, 128: 2614.
[61]
Kim K, Lambrecht WRL, Segal B. Electronic structure of GaN with strain and phonon distortions. Phys Rev B 1994, 50: 1502.
[62]
Blackman M. Contributions to the theory of the specific heat of crystals. I. Lattice theory and continuum theory. Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences 1935, 148: 365–383.
[63]
Gopal ESR. Specific Heats at Low Temperatures. New York: Plenum Press, 1966.
[64]
Tari A. The Specific Heat of Matter at Low Temperatures. London: Imperial College Press, 2003.
[65]
Goel P, Choudhury N, Chaplot SL. Superionic behavior of lithium oxide Li2O: A lattice dynamics and molecular dynamics study. Phys Rev B 2004, 70: 174307.
[66]
Hu YH, Ruckenstein E. Highly effective Li2O/Li3N with ultrafast kinetics for H2 storage. Ind Eng Chem Res 2004, 43: 2464–2467.
[67]
Li X-F, Chen X-R, Meng C-M, et al. Ab initio calculations of elastic constants and thermodynamic properties of Li2O for high temperatures and pressures. Solid State Commun 2006, 139: 197–200.
[68]
Kunc K, Balkanski M, Nusimovici MA. Lattice dynamics of several ANB8–N compounds having the zincblende structure. II. Numerical calculations. Phys Status Solidi b 1975, 72: 229–248.
[69]
Matsumoto T, Nose T, Nagata Y, et al. Measurement of high-temperature elastic properties of ceramics using a laser ultrasonic method. J Am Ceram Soc 2001, 84: 1521–1525.
[70]
Zhang X, Quan S, Ying C, et al. Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X = Si, Ge, Sn). Solid State Commun 2011, 151: 1545–1549.
[71]
Zhang X-D, Cui S-X, Shi H-F. Theoretical study of thermodynamics properties and bulk modulus of SiC under high pressure and temperature. Chinese Phys Lett 2014, 31: 016401.
Journal of Advanced Ceramics
Pages 13-34
Cite this article:
VARSHNEY D, SHRIYA S, JAIN S, et al. Mechanically induced stiffening, thermally driven softening, and brittle nature of SiC. Journal of Advanced Ceramics, 2016, 5(1): 13-34. https://doi.org/10.1007/s40145-015-0166-9

729

Views

18

Downloads

4

Crossref

N/A

Web of Science

4

Scopus

2

CSCD

Altmetrics

Received: 16 April 2015
Revised: 28 July 2015
Accepted: 12 August 2015
Published: 31 March 2016
© The author(s) 2016

Open Access The articles published in this journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons. org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Return