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The effect of sintering temperature on thermoelectric properties of CdO ceramics was investigated by solid-state reaction method within the temperature range of 700–1000 ℃. With the increase of sintering temperature, both the grain size and the carrier concentration of these samples increased, while the Seebeck coefficient decreased. The highest dimensionless figure of merit ZT, 0.34, was obtained at 1023 K for the sample sintered at 800 ℃, suggesting the potential application of CdO ceramics in thermoelectric (TE) devices.


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Effect of sintering temperature on thermoelectric properties of CdO ceramics

Show Author's information Xinran ZHANGHuiling LIJianglong WANG( )
Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

Abstract

The effect of sintering temperature on thermoelectric properties of CdO ceramics was investigated by solid-state reaction method within the temperature range of 700–1000 ℃. With the increase of sintering temperature, both the grain size and the carrier concentration of these samples increased, while the Seebeck coefficient decreased. The highest dimensionless figure of merit ZT, 0.34, was obtained at 1023 K for the sample sintered at 800 ℃, suggesting the potential application of CdO ceramics in thermoelectric (TE) devices.

Keywords:

thermoelectric (TE), CdO ceramics, sintering temperature, solid-state reaction
Received: 01 February 2015 Revised: 30 April 2015 Accepted: 03 May 2015 Published: 07 July 2015 Issue date: September 2015
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Publication history

Received: 01 February 2015
Revised: 30 April 2015
Accepted: 03 May 2015
Published: 07 July 2015
Issue date: September 2015

Copyright

© The author(s) 2015

Acknowledgements

This work was supported by the Natural Science Foundation of Hebei Province, China (Grant No. A2014201176) and the Science and Technology Research Projects of Colleges and Universities in Hebei Province, China (Grant No. ZD2014018).

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