Relaxor behavior and Raman spectra of CuO-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 ferroelectric ceramics

Huiqin LI; Jingsong LIU; Hongtao YU; Shuren ZHANG

doi:10.1007/s40145-014-0106-0

Journal of Advanced Ceramics 2014, 3(3): 177-183 https://doi.org/10.1007/s40145-014-0106-0

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Open Access | Issue | Published: 02 September 2014

Relaxor behavior and Raman spectra of CuO-doped Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ferroelectric ceramics

Show Author's Information Hide Author's Information Huiqin LI^{^a}, Jingsong LIU^{^a}(

), Hongtao YU^{^a}, Shuren ZHANG^{^b}

^a State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials, Southwest University of Science and Technology, Mianyang, Sichuan, China

^b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China

Keywords:

dielectric properties, relaxor ferroelectrics, Raman spectra

Cite this article:

LI H, LIU J, YU H, et al. Relaxor behavior and Raman spectra of CuO-doped Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ferroelectric ceramics. Journal of Advanced Ceramics, 2014, 3(3): 177-183. https://doi.org/10.1007/s40145-014-0106-0

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Abstract

In this work, Raman spectra and dielectricity–temperature dependence measurements were used to investigate the B-site order degree in CuO-doped Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ferroelectric ceramics. The measurement results indicated a typical relaxor characteristic for all samples. With the increasing of CuO doping content, the B-site order degree increased first and then decreased. However, the frequency dispersion and the relaxation degree decreased first and then increased while the CuO addition content was increasing, which was thought to be strongly correlated with the variations of the B-site order. The opposite variation tendency of the B-site order degree and the relaxation degree revealed that the phase transition dispersity is closely related to the order–disorder behaviors.

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Relaxor behavior and Raman spectra of CuO-doped Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ferroelectric ceramics

Show Author's information Hide Author's Information Huiqin LI^{^a}, Jingsong LIU^{^a}(

), Hongtao YU^{^a}, Shuren ZHANG^{^b}

^a State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials, Southwest University of Science and Technology, Mianyang, Sichuan, China

^b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China

Abstract

Keywords: dielectric properties, relaxor ferroelectrics, Raman spectra

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Acknowledgements

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Publication history

Received: 12 February 2014

Revised: 15 April 2014

Accepted: 27 April 2014

Published: 02 September 2014

Issue date: September 2014

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Acknowledgements

This research was supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (KFJJ201207).

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Open Access: This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.