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Journal of Advanced Ceramics 2014, 3(1): 56-70 https://doi.org/10.1007/s40145-014-0093-1
Research Article | Open Access | Issue | Published: 05 March 2014

Property mapping of polycrystalline diamond coatings over large area

Show Author's Information Awadesh Kumar MALLIKa( ),  Sandip BYSAKHa,  Monjoy SREEMANYa,  Sudakshina ROYa,  Jiten GHOSHa,  Soumyendu ROYb,  Joana Catarina MENDESc,  Jose GRACIOd,  Someswar DATTAa
CSIR -Central Glass & Ceramic Research Institute, Kolkata 700032, West Bengal, India
Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharashtra, India
Instituto de Telecomunicações, Campus Universitário de Santiago, 3810-193, Portugal
Nanotechnology Research Division, Centre for Mechanical Technology and Automation, University of Aveiro, 3810-193, Portugal
Keywords:
mechanical properties, plasma-enhanced chemical vapor deposition (CVD), diamond film, nanostructures
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MALLIK AK, BYSAKH S, SREEMANY M, et al. Property mapping of polycrystalline diamond coatings over large area. Journal of Advanced Ceramics, 2014, 3(1): 56-70. https://doi.org/10.1007/s40145-014-0093-1
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Abstract Full text About this article

Large-area polycrystalline diamond (PCD) coatings are important for fields such as thermal management, optical windows, tribological moving mechanical assemblies, harsh chemical environments, biological sensors, etc. Microwave plasma chemical vapor deposition (MPCVD) is a standard technique to grow high-quality PCD films over large area due to the absence of contact between the reactive species and the filament or the chamber wall. However, the existence of temperature gradients during growth may compromise the desired uniformity of the final diamond coatings. In the present work, a thick PCD coating was deposited on a 100-mm silicon substrate inside a 915-MHz reactor; the temperature gradient resulted in a non-uniform diamond coating. An attempt was made to relate the local temperature variation during deposition and the different properties of the final coating. It was found that there was large instability inside the system, in terms of substrate temperature (as high as ΔT = 212 ℃), that resulted in a large dispersion of the diamond coating's final properties: residual stress (-15.8 GPa to +6.2 GPa), surface morphology (octahedral pyramids with (111) planes to cubo-octahedrals with (100) flat top surfaces), thickness (190 µm to 245 µm), columnar growth of diamond (with appearance of variety of nanostructures), nucleation side hardness (17 GPa to 48 GPa), quality (Raman peak FWHM varying from 5.1 cm-1 to 12.4 cm-1 with occasional splitting). This random variation in properties over large-area PCD coating may hamper reproducible diamond growth for any meaningful technological application.


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About this article

Property mapping of polycrystalline diamond coatings over large area

Show Author's information Awadesh Kumar MALLIKa( ), Sandip BYSAKHa, Monjoy SREEMANYa, Sudakshina ROYa, Jiten GHOSHa, Soumyendu ROYb, Joana Catarina MENDESc, Jose GRACIOd, Someswar DATTAa
CSIR -Central Glass & Ceramic Research Institute, Kolkata 700032, West Bengal, India
Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharashtra, India
Instituto de Telecomunicações, Campus Universitário de Santiago, 3810-193, Portugal
Nanotechnology Research Division, Centre for Mechanical Technology and Automation, University of Aveiro, 3810-193, Portugal

Abstract

Large-area polycrystalline diamond (PCD) coatings are important for fields such as thermal management, optical windows, tribological moving mechanical assemblies, harsh chemical environments, biological sensors, etc. Microwave plasma chemical vapor deposition (MPCVD) is a standard technique to grow high-quality PCD films over large area due to the absence of contact between the reactive species and the filament or the chamber wall. However, the existence of temperature gradients during growth may compromise the desired uniformity of the final diamond coatings. In the present work, a thick PCD coating was deposited on a 100-mm silicon substrate inside a 915-MHz reactor; the temperature gradient resulted in a non-uniform diamond coating. An attempt was made to relate the local temperature variation during deposition and the different properties of the final coating. It was found that there was large instability inside the system, in terms of substrate temperature (as high as ΔT = 212 ℃), that resulted in a large dispersion of the diamond coating's final properties: residual stress (-15.8 GPa to +6.2 GPa), surface morphology (octahedral pyramids with (111) planes to cubo-octahedrals with (100) flat top surfaces), thickness (190 µm to 245 µm), columnar growth of diamond (with appearance of variety of nanostructures), nucleation side hardness (17 GPa to 48 GPa), quality (Raman peak FWHM varying from 5.1 cm-1 to 12.4 cm-1 with occasional splitting). This random variation in properties over large-area PCD coating may hamper reproducible diamond growth for any meaningful technological application.

Keywords: mechanical properties, plasma-enhanced chemical vapor deposition (CVD), diamond film, nanostructures

References(63)

[1]
Thumm M. MPACVD-diamond windows for high-power and long-pulse millimeter wave transmission. Diam Relat Mater 2001, 10: 1692–1699.
DOI Google Scholar
[2]
Oh A. Particle detection with CVD diamond. Ph.D. thesis. Univ Hamburg Germany, Inst Experim Physics, 1999.
[3]
Meier D. CVD diamond sensors for particle detection and tracking. Geneva (Switzerland): CERN, 1999.
[4]
Sussmann RS, Brandon JR, Coe SE, et al. CVD diamond: A new engineering material for thermal, dielectric and optical applications. Ind Diamond Rev 1998, 58: 69–77.
Google Scholar
[5]
Füner M, Wild C, Koidl P. Novel microwave plasma reactor for diamond synthesis. Appl Phys Lett 1998, 72: 1149–1151.
DOI Google Scholar
[6]
Silva F, Hassouni K, Bonnin X, et al. Microwave engineering of plasma-assisted CVD reactors for diamond deposition. J Phys: Condens Matter 2009, 21: 364202.
DOI Google Scholar
[7]
Yokota Y, Ando Y, Kobashi K, et al. Morphology control of diamond films in the region of α = 1–1.5 using a 60-kW microwave plasma CVD reactor. Diam Relat Mater 2003, 12: 295–297.
DOI Google Scholar
[8]
Schelz S, Campillo C, Moisan M. Characterization of diamond films deposited with a 915-MHz scaled-up surface-wave-sustained plasma. Diam Relat Mater 1998, 7: 1675–1683.
DOI Google Scholar
[9]
Vikharev AL, Gorbachev AM, Kozlov AV, et al. Diamond films grown by millimeter wave plasma-assisted CVD reactor. Diam Relat Mater 2006, 15: 502–507.
DOI Google Scholar
[10]
Grotjohn T, Liske R, Hassouni K, et al. Scaling behavior of microwave reactors and discharge size for diamond deposition. Diam Relat Mater 2005, 14: 288–291.
DOI Google Scholar
[11]
Zuo SS, Yaran MK, Grotjohn TA, et al. Investigation of diamond deposition uniformity and quality for freestanding film and substrate applications. Diam Relat Mater 2008, 17: 300–305.
DOI Google Scholar
[12]
Gicquel A, Hassouni K, Lombardi G, et al. New driving parameters for diamond deposition reactors: Pulsed mode versus continuous mode. Mat Res 2003, 6: 25–37.
DOI Google Scholar
[13]
Tsai H-Y, Kuo K-L. Nitrogen effect on the diamond deposition processing by 915-MHz microwave plasma enhanced chemical vapor deposition reactor. J Chin Soc Mech Eng 2007, 28: 157–162.
Google Scholar
[14]
Brandon JR, Coe SE, Sussmann RS, et al. Development of CVD diamond r.f. windows for ECRH. Fusion Eng Des 2001, 53: 553–559.
DOI Google Scholar
[15]
Windischmann H, Epps GF. Free-standing diamond membranes: Optical, morphological and mechanical properties. Diam Relat Mater 1992, 1: 656–664.
DOI Google Scholar
[16]
Meykens K, Haenen K, Nesládek M, et al. Measurement and mapping of very low optical absorption of CVD diamond IR windows. Diam Relat Mater 2000, 9: 1021–1025.
DOI Google Scholar
[17]
Pickles CSJ, Madgwick TD, Sussmann RS, et al. Optical performance of chemically vapour-deposited diamond at infrared wavelengths. Diam Relat Mater 2000, 9: 916–920.
DOI Google Scholar
[18]
Braz O, Kasugai A, Sakamoto K, et al. High power 170 GHz test of CVD diamond for ECH window. Int J Infrared Milli 1997, 18: 1495–1503.
DOI Google Scholar
[19]
Heidinger R, Dammertz G, Meier A, et al. CVD diamond windows studied with low- and high-power millimeter waves. IEEE T Plasma Sci 2002, 30: 800–807.
DOI Google Scholar
[20]
Woerner E, Wild C, Mueller-Sebert W, et al. CVD-diamond optical lenses. Diam Relat Mater 2001, 10: 557–560.
DOI Google Scholar
[21]
Klein CA. Diamond windows and domes: Flexural strength and thermal shock. Diam Relat Mater 2002, 11: 218–227.
DOI Google Scholar
[22]
Piazza F, Morell G. Synthesis of diamond at sub 300 ℃ substrate temperature. Diam Relat Mater 2007, 16: 1950–1957.
DOI Google Scholar
[23]
Stiegler J, Michler J, Blank E. An investigation of structural defects in diamond films grown at low substrate temperatures. Diam Relat Mater 1999, 8: 651–656.
DOI Google Scholar
[24]
El Hakiki M, Elmazria O, Bénédic F, et al. Diamond film on Langasite substrate for surface acoustic wave devices operating in high frequency and high temperature. Diam Relat Mater 2007, 16: 966–969.
DOI Google Scholar
[25]
Titus E, Sikder AK, Paltnikar U, et al. Enhancement of (100) texture in diamond films grown using a temperature gradient. Diam Relat Mater 2002, 11: 1403–1408.
DOI Google Scholar
[26]
Joe R, Badgwell TA, Hauge RH. Atomic carbon insertion as a low-substrate-temperature growth mechanism in diamond CVD. Diam Relat Mater 1998, 7: 1364–1374.
DOI Google Scholar
[27]
Piazza F, González JA, Velázquez R, et al. Diamond film synthesis at low temperature. Diam Relat Mater 2006, 15: 109–116.
DOI Google Scholar
[28]
Sun Z, Shi X, Wang X, et al. Morphological features of diamond films depending on substrate temperatures via a low pressure polymer precursor process in a hot filament reactor. Diam Relat Mater 1998, 7: 939–943.
DOI Google Scholar
[29]
Potocky S, Kromka A, Potmesil J, et al. Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 ℃. Diam Relat Mater 2007, 16: 744–747.
DOI Google Scholar
[30]
Kromka A, Potocký Š, Čermák J, et al. Early stage of diamond growth at low temperature. Diam Relat Mater 2008, 17: 1252–1255.
DOI Google Scholar
[31]
Mallik AK, Binu SR, Satapathy LN, et al. Effect of substrate roughness on growth of diamond by hot filament CVD. Bull Mater Sci 2010, 33: 251–255.
DOI Google Scholar
[32]
Mallik AK, Shivashankar SA, Biswas SK. High vacuum tribology of polycrystalline diamond coatings. Sadhana 2009, 34: 811–821.
DOI Google Scholar
[33]
Aleksandrov VD, Sel'skaya IV. Effect of synthesis conditions on the growth rate and structure of diamond films. Inorg Mater 2003, 39: 455–458.
DOI Google Scholar
[34]
Ralchenko V, Sychov I, Vlasov I, et al. Quality of diamond wafers grown by microwave plasma CVD: Effects of gas flow rate. Diam Relat Mater 1999, 8: 189–193.
DOI Google Scholar
[35]
Zimmer J, Ravi KV. Aspects of scaling CVD diamond reactors. Diam Relat Mater 2006, 15: 229–233.
DOI Google Scholar
[36]
Mallik AK, Pal KS, Dandapat N, et al. Influence of the microwave plasma CVD reactor parameters on substrate thermal management for growing large area diamond coatings inside a 915 MHz and moderately low power unit. Diam Relat Mater 2012, 30: 53–61.
DOI Google Scholar
[37]
King D, Yaran MK, Schuelke T, et al. Scaling the microwave plasma-assisted chemical vapor diamond deposition process to 150–200 mm substrates. Diam Relat Mater 2008, 17: 520–524.
DOI Google Scholar
[38]
Shenderova O, Hens S, McGuire G. Seeding slurries based on detonation nanodiamond in DMSO. Diam Relat Mater 2010, 19: 260–267.
DOI Google Scholar
[39]
Young RA. The Rietveld Method. Oxford: Oxford University Press, 1993: 1–70.
DOI
[40]
Rietveld HM. A profile refinement method for nuclear and magnetic structures. J Appl Cryst 1969, 2: 65–71.
DOI Google Scholar
[41]
Grotjohn TA, Asmussen J. Microwave plasma- assisted diamond film deposition. In Diamond Films Handbook. Asmussen J, Reinhard DK, Eds. New York: Marcel Dekker Inc, 2002: 243–260.
DOI
[42]
Ma J. Exploration of the gas phase chemistry in microwave activated plasmas used for diamond chemical vapour deposition. Ph.D. thesis. Bristol(UK): University of Bristol, 2008.
[43]
Raghavan V. Materials Science and Engineering: A First Course, 4th edn. New Delhi: Prentice Hall of India Private Limited, 1998: 44.
[44]
Wang W-L, Wang S-M, Cho S-Y, et al. Fabrication and structural property of diamond nano-platelet arrays on {111} textured diamond film. Diam Relat Mater 2012, 25: 155–158.
DOI Google Scholar
[45]
Hausmann BJM, Khan M, Zhang Y, et al. Fabrication of diamond nanowires for quantum information processing applications. Diam Relat Mater 2010, 19: 621–629.
DOI Google Scholar
[46]
Stoikou MD, John P, Wilson JIB. Unusual morphology of CVD diamond surfaces after RIE. Diam Relat Mater 2008, 17: 1164–1168.
DOI Google Scholar
[47]
Li CY, Hatta A. Preparation of diamond whiskers using Ar/O2 plasma etching. Diam Relat Mater 2005, 14: 1780–1783.
DOI Google Scholar
[48]
Petherbridge JR, May PW, Baines M, et al. Observations of nanotube and 'celery' structures following diamond CVD on single crystal diamond substrates. Diam Relat Mater 2003, 12: 1858–1861.
DOI Google Scholar
[49]
Ando Y, Nishibayashi Y, Sawabe A. 'Nano-rods' of single crystalline diamond. Diam Relat Mater 2004, 13: 633–637.
DOI Google Scholar
[50]
Shenderova O, McGuire G. Nanocrystalline diamond. In Nanomaterials Handbook. Gogotsi Y, Ed. Boca Raton: Taylor & Francis Group, 2006.
DOI
[51]
Chen H-G, Chang L. Characterization of diamond nanoplatelets. Diam Relat Mater 2004, 13: 590–594.
DOI Google Scholar
[52]
Erasmus RM, Comins JD, Mofokeng V, et al. Application of Raman spectroscopy to determine stress in polycrystalline diamond tools as a function of tool geometry and temperature. Diam Relat Mater 2011, 20: 907–911.
DOI Google Scholar
[53]
Osipov AS, Nauyoks S, Zerda TW, et al. Rapid sintering of nano-diamond compacts. Diam Relat Mater 2009, 18: 1061–1064.
DOI Google Scholar
[54]
Wang CX, Yang GW. Thermodynamics of metastable phase nucleation at the nanoscale. Mat Sci Eng R 2005, 49: 157–202.
DOI Google Scholar
[55]
Mochalin VN, Shenderova O, Ho D, et al. The properties and applications of nanodiamonds. Nat Nanotechnol 2012, 7: 11–23.
DOI Google Scholar
[56]
Sails SR, Gardiner DJ, Bowden M, et al. Monitoring the quality of diamond films using Raman spectra excited at 514.5 nm and 633 nm. Diam Relat Mater 1996, 5: 589–591.
DOI Google Scholar
[57]
Donato MG, Faggio G, Marinelli M, et al. A joint macro-/micro- Raman investigation of the diamond lineshape in CVD films: The influence of texturing and stress. Diam Relat Mater 2001, 10: 1535–1543.
DOI Google Scholar
[58]
Morell G, Quiñones O, Díaz Y, et al. Measurement and analysis of diamond Raman bandwidths. Diam Relat Mater 1998, 7: 1029–1032.
DOI Google Scholar
[59]
Windischmann H, Gray KJ. Stress measurement of CVD diamond films. Diam Relat Mater 1995, 4: 837–842.
DOI Google Scholar
[60]
Chen KH, Lai YL, Lin JC, et al. Micro-Raman for diamond film stress analysis. Diam Relat Mater 1995, 4: 460–463.
DOI Google Scholar
[61]
Pandey M, D'Cunha R, Tyagi AK. Defects in CVD diamond: Raman and XRD studies. J Alloys Compd 2002, 333: 260–265.
DOI Google Scholar
[62]
Nibennanoune Z, George D, Antoni F, et al. Improving diamond coating on Ti6Al4V substrate using a diamond like carbon interlayer: Raman residual stress evaluation and AFM analyses. Diam Relat Mater 2012, 22: 105–112.
DOI Google Scholar
[63]
Mallik AK. Hot filament CVD growth of polycrystalline diamond films and its characterization. Master thesis. Bangalore: India Institute of Science, 2003: 53–54.
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Publication history

Received: 13 November 2013
Accepted: 08 January 2014
Published: 05 March 2014
Issue date: March 2014

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© The author(s) 2014

Acknowledgements

CSIR, India provided financial support for the network project "Very High Power MW Tubes: Design and Development Capabilities (MTDDC)" (CSIR Grant Nos. NWP 0024 and PSC0101) under the 11th and 12th five-year plan periods. Dr. J. C. Mendes is thankful to the Instituto de Telecomunicações for providing the necessary working conditions. Lambda Technologies Inc. USA was helpful in carrying out the CVD experimental runs.

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