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Single phase of SrIrO3 powders and ceramics were obtained by solid-state chemical reaction method and spark plasma sintering (SPS) technique, respectively. Phase evolutions, characteristics, morphology and resistivity of the samples were studied by using thermogravimetric analysis–differential scanning calorimetry (TG–DSC), X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and four-point probe method, respectively. The results showed that the reaction process to form SrIrO3 phase occurred between SrCO3 and IrO2 directly during the heating process. By using optimum fabrication conditions established from the TG–DSC results, single phase of SrIrO3 powders was synthesized at 800–1000 ℃. SrIrO3 ceramics were sintered by SPS technique at 1000–1100 ℃ with a pressure of 30 MPa, showing a high relative density of 92%–96% and dense microstructure. The room-temperature resistivity of SrIrO3 ceramics was about 2×10-4 Ω•m. The present study can provide high-quality ceramic target for the preparation of SrIrO3 films in traditional physical vapor deposition (PVD) method.


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Synthetic process and spark plasma sintering of SrIrO3 composite oxide

Show Author's information Yongshang TIANa,bYansheng GONGa,b,*( )Zhaoying LIaFeng JIANGaHongyun JINa,b
Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan 430074, People’s Republic of China
Engineering Research Center and Application of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074, People’s Republic of China

Abstract

Single phase of SrIrO3 powders and ceramics were obtained by solid-state chemical reaction method and spark plasma sintering (SPS) technique, respectively. Phase evolutions, characteristics, morphology and resistivity of the samples were studied by using thermogravimetric analysis–differential scanning calorimetry (TG–DSC), X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and four-point probe method, respectively. The results showed that the reaction process to form SrIrO3 phase occurred between SrCO3 and IrO2 directly during the heating process. By using optimum fabrication conditions established from the TG–DSC results, single phase of SrIrO3 powders was synthesized at 800–1000 ℃. SrIrO3 ceramics were sintered by SPS technique at 1000–1100 ℃ with a pressure of 30 MPa, showing a high relative density of 92%–96% and dense microstructure. The room-temperature resistivity of SrIrO3 ceramics was about 2×10-4 Ω•m. The present study can provide high-quality ceramic target for the preparation of SrIrO3 films in traditional physical vapor deposition (PVD) method.

Keywords: spark plasma sintering (SPS), SrIrO3, powder, controllable synthesis

References(16)

[1]
PauPorté T, Aberdam D, Hazemann J-L, et al. X-ray absorption in relation to valency of iridium in sputtered iridium oxide films. J Electroanal Chem 1999, 465: 88-95.
[2]
Keawprak N, Tu R, Goto T. Thermoelectricity of CaIrO3 ceramics prepared by spark plasma sintering. J Ceram Soc Jpn 2009, 117: 466-469.
[3]
Xu W, Zheng L, Xin H, et al. BaRuO3 thin films prepared by pulsed laser deposition. Mater Lett 1995, 25: 175-178.
[4]
Choi KJ, Baek SH, Jang HW, et al. Phase-transition temperatures of strained single-crystal SrRuO3 thin films. Adv Mater 2010, 22: 759-762.
[5]
Cao G, Durairaj V, Chikara S, et al. Non-Fermi-liquid behavior in nearly ferromagnetic SrIrO3 single crystals. Phys Rev B 2007, 76: 100402.
[6]
Liu Y, Masumoto H, Goto T. Structural, electrical and optical characterization of SrIrO3 thin films prepared by laser-ablation. Mater Trans 2005, 46: 100-104.
[7]
Zhao JG, Yang LX, Yu Y, et al. High-pressure synthesis of orthorhombic SrIrO3 perovskite and its positive magnetoresistance. J Appl Phys 2008, 103: 103706.
[8]
McDaniel CL, Schneider SJ. Phase relation in the SrO–IrO2–Ir system in air. J Res NBS A Phys Ch 1971, 75A: 185-196.
[9]
Jacob KT, Okabe TH, Uda T, et al. Phase relations in the system Sr–Ir–O and thermodynamic measurements on SrIrO3, Sr2IrO4 and Sr4IrO6 using solid-state cells with buffer electrodes. J Alloys Compd 1999, 288: 188-196.
[10]
Longo JM, Kafalas JA, Arnott RJ. Structure and properties of the high and low pressure forms of SrIrO3. J Solid State Chem 1971, 3: 174-179.
[11]
Sumi A, Kim YK, Oshima N, et al. MOCVD growth of epitaxial SrIrO3 films on (111) SrTiO3 substrates. Thin Solid Films 2005, 486: 182-185.
[12]
Jang SY, Kim H, Moon SJ, et al. The electronic structure of epitaxially stabilized 5d perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films: The role of strong spin-orbit coupling. J Phys: Condens Matter 2010, 22: 485602.
[13]
Jang SY, Moon SJ, Jeon BC. PLD growth of epitaxially-stabilized 5d perovskite SrIrO3 thin films. J Korean Phys Soc 2010, 56: 1814-1817.
[14]
Keawprak N, Tu R, Goto T. Thermoelectric properties of Sr–Ir–O compounds prepared by spark plasma sintering. J Alloys Compd 2010, 491: 441-446.
[15]
Qasim I, Kennedy BJ, Avdeev M. Synthesis, structures and properties of transition metal doped SrIrO3. J Mater Chem A 2013, 1: 3127-3132.
[16]
Zhang J, Tu R, Goto T. Fabrication of transparent SiO2 glass by pressureless sintering and spark plasma sintering. Ceram Int 2012, 38: 2673-2678.
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Publication history

Received: 08 July 2013
Revised: 01 September 2013
Accepted: 07 September 2013
Published: 04 December 2013
Issue date: December 2013

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© The author(s) 2013

Acknowledgements

This work was financially supported by Hubei Provincial Nature Science Found of China (2011CDB331), State Key Laboratory of Advanced Technology for Materials Synthesis Processing (Wuhan University of Technology, 2012-KF-3), and the Fundamental Research Founds for National University, China University of Geosciences (Wuhan) (CUG120118).

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