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Journal of Advanced Ceramics 2013, 2(3): 242-245 https://doi.org/10.1007/s40145-013-0066-9
Research Article | Open Access | Issue | Published: 07 September 2013

Effect of the addition of TEOS on the SiC fibers fabricated by electrospinning

Show Author's Information Jiayan LI,  Panpan CAO,  Yi TAN*( ),  Lei ZHANG
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Keywords:
silicon carbide (SiC), tetraethyl orthosilicate (TEOS), electrospinning, fibers
Cite this article:
LI J, CAO P, TAN Y, et al. Effect of the addition of TEOS on the SiC fibers fabricated by electrospinning. Journal of Advanced Ceramics, 2013, 2(3): 242-245. https://doi.org/10.1007/s40145-013-0066-9
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Abstract Full text About this article

Polycarbosilane (PCS) has been widely used to fabricate silicon carbide (SiC) fibers via pyrolysis. In this paper, for improving the morphology of SiC fibers, tetraethyl orthosilicate (TEOS, m = 1 g, 3 g and 5 g, respectively) was added into the PCS precursor solution (containing 1.5 g PCS). The continuous fibers have been prepared by electrospinning, and then the SiC fibers were synthesized by calcination at 1300 ℃, 1400 ℃ and 1600 ℃ for 4 h respectively with a heating rate of 10 ℃/min in flowing nitrogen (N2). The morphologies of the fibers were investigated by the scanning electron microscope (SEM) and it could be seen that the crystallinity of the SiC fibers was lower, the length of the SiC fibers was increased, and the diameter was uniform with the increase of the addition amount of TEOS.


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About this article

Effect of the addition of TEOS on the SiC fibers fabricated by electrospinning

Show Author's information Jiayan LI, Panpan CAO, Yi TAN*( ), Lei ZHANG
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

Abstract

Polycarbosilane (PCS) has been widely used to fabricate silicon carbide (SiC) fibers via pyrolysis. In this paper, for improving the morphology of SiC fibers, tetraethyl orthosilicate (TEOS, m = 1 g, 3 g and 5 g, respectively) was added into the PCS precursor solution (containing 1.5 g PCS). The continuous fibers have been prepared by electrospinning, and then the SiC fibers were synthesized by calcination at 1300 ℃, 1400 ℃ and 1600 ℃ for 4 h respectively with a heating rate of 10 ℃/min in flowing nitrogen (N2). The morphologies of the fibers were investigated by the scanning electron microscope (SEM) and it could be seen that the crystallinity of the SiC fibers was lower, the length of the SiC fibers was increased, and the diameter was uniform with the increase of the addition amount of TEOS.

Keywords: silicon carbide (SiC), tetraethyl orthosilicate (TEOS), electrospinning, fibers

References(15)

[1]
Ahmadi TS, Wang ZL, Green TC, et al. Shape-controlled synthesis of colloidal platinum nanoparticles. Science 1996, 272: 1924-1925.
DOI Google Scholar
[2]
Huynh WU, Peng X, Alivisatos AP. CdSe nanocrystal rods/poly (3-hexylthiophene) composite photovoltaic devices. Adv Mater 1999, 11: 923-927.
DOI
[3]
Chan WCW, Nie S. Quantum dot bioconjugates for ultrasensitive nonisotopic detection. Science 1998, 281: 2016-2018.
DOI Google Scholar
[4]
Wang ZL, Dai ZR, Gao RP, et al. Side-by-side silicon carbide–silica biaxial nanowires: Synthesis, structure, and mechanical properties. Appl Phys Lett 2000, 77: 3349.
DOI Google Scholar
[5]
Zhang Y, Nishitani-Gamo M, Xiao C, et al. A novel synthesis method for aligned carbon nanotubes in organic liquids. Jpn J Appl Phys 2002, 41: L408-L411.
DOI Google Scholar
[6]
Choi H-J, Seong H-K, Lee J-C, et al. Growth and modulation of silicon carbide nanowires. J Cryst Growth 2004, 269: 472-478.
DOI Google Scholar
[7]
Bootsma GA, Knippenberg WF, Verspui G. Growth of SiC whiskers in the system SiO2–C–H2 nucleated by iron. J Cryst Growth 1971, 11: 297-309.
DOI Google Scholar
[8]
Wang L, Wada H, Allard LF. Synthesis and characterization of SiC whiskers. J Mater Res 1992, 7: 148-163.
DOI Google Scholar
[9]
Meng GW, Zhang LD, Mo CM, et al. Preparation of β-SiC nanorods with and without amorphous SiO2 wrapping layers. J Mater Res 1998, 13: 2533-2538.
DOI Google Scholar
[10]
Zhou XT, Lai HL, Peng HY, et al. Thin β-SiC nanorods and their field emission properties. Chem Phys Lett 2000, 318: 58-62.
DOI Google Scholar
[11]
Leu I-C, Lu Y-M, Hon M-H. Substrate effect on the preparation of silicon carbide whiskers by chemical vapor deposition. J Cryst Growth 1996, 167: 607-611.
DOI Google Scholar
[12]
Motojima S, Hasegawa M, Hattori T. Chemical vapour growth of β-SiC whiskers from a gas mixture of Si2Cl6–CH4–H2–Ar. J Cryst Growth 1988, 87: 311-317.
DOI Google Scholar
[13]
Tang CC, Fan SS, Dang HY, et al. Growth of SiC nanorods prepared by carbon nanotubes-confined reaction. J Cryst Growth 2000, 210: 595-599.
DOI Google Scholar
[14]
Cheng XZ, Xiao JY, Xie ZF, et al. Research on curing of polycarbosilane fiber and preparation of SiC fiber. J Mater Eng 2004, 1: 29-37 (in Chinese).
Google Scholar
[15]
Zheng CM, Li XD, Wang H, et al. Thermal stability and curing kinetics of polycarbosilane fibers. Trans Nonferrous Met Soc China 2006, 16: 44-48.
DOI Google Scholar
Publication history
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Publication history

Received: 02 April 2013
Revised: 24 April 2013
Accepted: 25 April 2013
Published: 07 September 2013
Issue date: September 2013

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© The author(s) 2013

Acknowledgements

This work was financially supported by the Fundamental Research Funds for the Central Universities (No. DUT12LAB03), the National Natural Science Foundation of China (No. 51104028), and the Specialized Research Fund for the Doctoral Program of Higher Education (20110041120031).

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Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

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