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Journal of Advanced Ceramics 2013, 2(2): 167-172 https://doi.org/10.1007/s40145-013-0057-x
Research Article | Open Access | Issue | Published: 04 June 2013

Preparation of TiO2-rich Ba–Ti–O thick films by laser chemical vapor deposition method

Show Author's Information Dongyun GUOa,b,*( ),  Akihiko ITOb,  Takashi GOTOb,  Rong TUb,  Chuanbin WANGa,  Qiang SHENa,  Lianmeng ZHANGa
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Keywords:
microstructure, dielectric properties, laser chemical vapor deposition (LCVD), TiO2-rich Ba–Ti–O film, deposition temperature
Cite this article:
GUO D, ITO A, GOTO T, et al. Preparation of TiO2-rich Ba–Ti–O thick films by laser chemical vapor deposition method. Journal of Advanced Ceramics, 2013, 2(2): 167-172. https://doi.org/10.1007/s40145-013-0057-x
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Abstract Full text About this article

TiO2-rich Ba–Ti–O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba–Ti–O films ranged from 54.0 µm/h to 177.6 µm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.


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About this article

Preparation of TiO2-rich Ba–Ti–O thick films by laser chemical vapor deposition method

Show Author's information Dongyun GUOa,b,*( ), Akihiko ITOb, Takashi GOTOb, Rong TUb, Chuanbin WANGa, Qiang SHENa, Lianmeng ZHANGa
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Abstract

TiO2-rich Ba–Ti–O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba–Ti–O films ranged from 54.0 µm/h to 177.6 µm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.

Keywords: microstructure, dielectric properties, laser chemical vapor deposition (LCVD), TiO2-rich Ba–Ti–O film, deposition temperature

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Publication history
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Publication history

Received: 26 January 2013
Revised: 17 March 2013
Accepted: 18 March 2013
Published: 04 June 2013
Issue date: June 2013

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© The author(s) 2013

Acknowledgements

This work was supported in part by the Global COE Program of the Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).

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Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

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