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Research Article | Online first | Published: 02 May 2024

Observation of robust anisotropy in WS2/BP heterostructures

Show Author's Information Xinran Li1,2,  Xing Xie1,2,  Biao Wu1,2,  Junying Chen1,2,  Shaofei Li1,  Jun He1,  Zongwen Liu3,4,  Jian-Tao Wang5,6,7,  Yanping Liu1,2,8( )
Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha 410083, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
Shenzhen Research Institute of Central South University, Shenzhen 518000, China
Keywords:
two-dimensional materials, black phosphorus, optoelectronic devices, heterojunctions, in-plane anisotropy, photoluminescence spectra
Topics:
Semiconducting films
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Li X, Xie X, Wu B, et al. Observation of robust anisotropy in WS2/BP heterostructures. Nano Research, 2024, https://doi.org/10.1007/s12274-024-6638-x
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) anisotropic materials have garnered significant attention in the realm of anisotropic optoelectronic devices due to their remarkable electrical, optical, thermal, and mechanical properties. While extensive research has delved into the optical and electrical characteristics of these materials, there remains a need for further exploration to identify novel materials and structures capable of fulfilling device requirements under various conditions. Here, we employ heterojunction interface engineering with black phosphorus (BP) to disrupt the C3 rotational symmetry of monolayer WS2. The resulting WS2/BP heterostructure exhibits pronounced anisotropy in exciton emissions, with a measured anisotropic ratio of 1.84 for neutral excitons. Through a comprehensive analysis of magnetic-field-dependent and temperature-evolution photoluminescence spectra, we discern varying trends in the polarization ratio, notably observing a substantial anisotropy ratio of 1.94 at a temperature of 1.6 Kand a magnetic field of 9 T. This dynamic behavior is attributed to the susceptibility of the WS2/BP heterostructure interface strain to fluctuations in magnetic fields and temperatures. These findings provide valuable insights into the design of anisotropic optoelectronic devices capable of adaptation to a range of magnetic fields and temperatures, thereby advancing the frontier of material-driven device engineering.


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Electronic supplementary material
About this article

Observation of robust anisotropy in WS2/BP heterostructures

Show Author's information Xinran Li1,2, Xing Xie1,2, Biao Wu1,2, Junying Chen1,2, Shaofei Li1, Jun He1, Zongwen Liu3,4, Jian-Tao Wang5,6,7, Yanping Liu1,2,8( )
Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha 410083, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
Shenzhen Research Institute of Central South University, Shenzhen 518000, China

Abstract

Two-dimensional (2D) anisotropic materials have garnered significant attention in the realm of anisotropic optoelectronic devices due to their remarkable electrical, optical, thermal, and mechanical properties. While extensive research has delved into the optical and electrical characteristics of these materials, there remains a need for further exploration to identify novel materials and structures capable of fulfilling device requirements under various conditions. Here, we employ heterojunction interface engineering with black phosphorus (BP) to disrupt the C3 rotational symmetry of monolayer WS2. The resulting WS2/BP heterostructure exhibits pronounced anisotropy in exciton emissions, with a measured anisotropic ratio of 1.84 for neutral excitons. Through a comprehensive analysis of magnetic-field-dependent and temperature-evolution photoluminescence spectra, we discern varying trends in the polarization ratio, notably observing a substantial anisotropy ratio of 1.94 at a temperature of 1.6 Kand a magnetic field of 9 T. This dynamic behavior is attributed to the susceptibility of the WS2/BP heterostructure interface strain to fluctuations in magnetic fields and temperatures. These findings provide valuable insights into the design of anisotropic optoelectronic devices capable of adaptation to a range of magnetic fields and temperatures, thereby advancing the frontier of material-driven device engineering.

Keywords: two-dimensional materials, black phosphorus, optoelectronic devices, heterojunctions, in-plane anisotropy, photoluminescence spectra

References(55)

[1]

Li, L.; Han, W.; Pi, L. J.; Niu, P.; Han, J. B.; Wang, C. L.; Su, B.; Li, H. Q.; Xiong, J.; Bando, Y. et al. Emerging in-plane anisotropic two-dimensional materials. InfoMat 2019, 1, 54–73.
DOI Google Scholar
[2]

Zhan, Y.; Wang, Y.; Cheng, Q. F.; Li, C.; Li, K. X.; Li, H. Z.; Peng, J. S.; Lu, B.; Wang, Y.; Song, Y. L. et al. A butterfly-inspired hierarchical light-trapping structure towards a high-performance polarization-sensitive perovskite photodetector. Angew. Chem. 2019, 131, 16608–16614.
DOI Google Scholar
[3]

Su, B. W.; Yao, B. W.; Zhang, X. L.; Huang, K. X.; Li, D. K.; Guo, H. W.; Li, X. K.; Chen, X. D.; Liu, Z. B.; Tian, J. G. A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing. Nanoscale Adv. 2020, 2, 1733–1740.
DOI Google Scholar
[4]

Mao, N. N.; Zhang, S. S.; Wu, J. X.; Tian, H. H.; Wu, J. X.; Xu, H.; Peng, H. L.; Tong, L. M.; Zhang, J. Investigation of black phosphorus as a nano-optical polarization element by polarized Raman spectroscopy. Nano Res. 2018, 11, 3154–3163.
DOI Google Scholar
[5]

Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tománek, D.; Ye, P. D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 2014, 8, 4033–4041.
DOI Google Scholar
[6]

Buscema, M.; Groenendijk, D. J.; Steele, G. A.; Van Der Zant, H. S. J.; Castellanos-Gomez, A. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating. Nat. Commun. 2014, 5, 4651.
DOI Google Scholar
[7]

Wang, X. M.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y. C.; Zhao, H.; Wang, H.; Yang, L.; Xu, X. D.; Xia, F. N. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 2015, 10, 517–521.
DOI Google Scholar
[8]

Zhang, S.; Yang, J.; Xu, R. J.; Wang, F.; Li, W. F.; Ghufran, M.; Zhang, Y. W.; Yu, Z. F.; Zhang, G.; Qin, Q. H. et al. Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene. ACS Nano 2014, 8, 9590–9596.
DOI Google Scholar
[9]

Mao, N. N.; Tang, J. Y.; Xie, L. M.; Wu, J. X.; Han, B. W.; Lin, J. J.; Deng, S. B.; Ji, W.; Xu, H.; Liu, K. H. et al. Optical anisotropy of black phosphorus in the visible regime. J. Am. Chem. Soc. 2016, 138, 300–305.
DOI Google Scholar
[10]

Liu, X. L.; Ryder, C. R.; Wells, S. A.; Hersam, M. C. Resolving the in-plane anisotropic properties of black phosphorus. Small Methods 2017, 1, 1700143.
DOI Google Scholar
[11]

Zhao, M.; Zhang, W. T.; Liu, M. M.; Zou, C.; Yang, K. Q.; Yang, Y.; Dong, Y. Q.; Zhang, L. J.; Huang, S. M. Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers. Nano Res. 2016, 9, 3772–3780.
DOI Google Scholar
[12]

Liang, J.; Yang, D. Y.; Wu, J. D.; Dadap, J. I.; Watanabe, K.; Taniguchi, T.; Ye, Z. L. Optically probing the asymmetric interlayer coupling in rhombohedral-stacked MoS2 bilayer. Phys. Rev. X 2022, 12, 041005.
DOI Google Scholar
[13]

Tang, Y. X.; Hao, H.; Kang, Y.; Liu, Q. R.; Sui, Y. Z.; Wei, K.; Cheng, X. A.; Jiang, T. Distinctive interfacial charge behavior and versatile photoresponse performance in isotropic/anisotropic WS2/ReS2 heterojunctions. ACS Appl. Mater. Interfaces 2020, 12, 53475–53483.
DOI Google Scholar
[14]

Xie, X.; Ding, J. N.; Wu, B.; Zheng, H. H.; Li, S. F.; He, J.; Liu, Z. W.; Wang, J. T.; Liu, Y. P. Anisotropic optical characteristics of WS2/ReS2 heterostructures with broken rotational symmetry. Appl. Phys. Lett. 2023, 123, 222101.
DOI Google Scholar
[15]

Ruiz-Tijerina, D. A.; Soltero, I.; Mireles, F. Theory of moiré localized excitons in transition metal dichalcogenide heterobilayers. Phys. Rev. B 2020, 102, 195403.
DOI Google Scholar
[16]

Patra, S.; Das, M.; Mahadevan, P. The role of stacking on the electronic structure of MoSe2 at small twist angles. J. Phys. Mater. 2024, 7, 014001.
DOI Google Scholar
[17]

Delhomme, A.; Vaclavkova, D.; Slobodeniuk, A.; Orlita, M.; Potemski, M.; Basko, D. M.; Watanabe, K.; Taniguchi, T.; Mauro, D.; Barreteau, C. Flipping exciton angular momentum with chiral phonons in MoSe2/WSe2 heterobilayers. 2D Mater. 2020, 7, 041002.
DOI Google Scholar
[18]

Hu, T.; Zhao, G. D.; Gao, H.; Wu, Y. B.; Hong, J. S.; Stroppa, A.; Ren, W. Manipulation of valley pseudospin in WSe2/CrI3 heterostructures by the magnetic proximity effect. Phys. Rev. B 2020, 101, 125401.
DOI Google Scholar
[19]

Goode, S. W.; Wainwright, J. Characterization of locally rotationally symmetric space-times. Gen. Relat. Gravit. 1986, 18, 315–331.
DOI Google Scholar
[20]

Tong, L.; Duan, X. Y.; Song, L. Y.; Liu, T. D.; Ye, L.; Huang, X. Y.; Wang, P.; Sun, Y. H.; He, X.; Zhang, L. J. et al. Artificial control of in-plane anisotropic photoelectricity in monolayer MoS2. Appl. Mater. Today 2019, 15, 203–211.
DOI Google Scholar
[21]

Zheng, X. M.; Wei, Y. H.; Zhang, X. Z.; Wei, Z. H.; Luo, W.; Guo, X.; Liu, J. X.; Peng, G.; Cai, W. W.; Huang, H. et al. Symmetry engineering induced in-plane polarization in MoS2 through Van der Waals interlayer coupling. Adv Funct. Mater. 2022, 32, 2202658.
DOI Google Scholar
[22]

Wang, W. J.; Sun, Y. R.; Dai, P.; Gao, H. L.; Du, C. H.; Li, K. L. Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures. Appl. Phys. Lett. 2023, 122, 233101.
DOI Google Scholar
[23]

Li, Z. Y.; Huang, J. W.; Zhou, L.; Xu, Z. A.; Qin, F.; Chen, P.; Sun, X. J.; Liu, G.; Sui, C. Q.; Qiu, C. Y. et al. An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces. Nat. Commun. 2023, 14, 5568.
DOI Google Scholar
[24]

Li, D. L.; Gong, Y. N.; Chen, Y. X.; Lin, J. M.; Khan, Q.; Zhang, Y. P.; Li, Y.; Zhang, H.; Xie, H. P. Recent progress of two-dimensional thermoelectric materials. Nano-Micro Lett. 2020, 12, 36.
DOI Google Scholar
[25]

Duan, S. Y.; Qin, F.; Chen, P.; Yang, X. P.; Qiu, C. Y.; Huang, J. W.; Liu, G.; Li, Z. Y.; Bi, X. Y.; Meng, F. H. et al. Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces. Nat. Nanotechnol. 2023, 18, 867–874.
DOI Google Scholar
[26]

Zeng, C.; Zhong, J. H.; Wang, Y. P.; Yu, J.; Cao, L. K.; Zhao, Z. L.; Ding, J. N.; Cong, C. X.; Yue, X. F.; Liu, Z. W. et al. Observation of split defect-bound excitons in twisted WSe2/WSe2 homostructure. Appl. Phys. Lett. 2020, 117, 153103.
DOI Google Scholar
[27]

Absor, M. A. U.; Kotaka, H.; Ishii, F.; Saito, M. Strain-controlled spin splitting in the conduction band of monolayer WS2. Phys. Rev. B 2016, 94, 115131.
DOI Google Scholar
[28]

Mlack, J. T.; Das, P. M.; Danda, G.; Chou, Y. C.; Naylor, C. H.; Lin, Z.; López, N. P.; Zhang, T. Y.; Terrones, M.; Johnson, A. T. C. et al. Transfer of monolayer TMD WS2 and Raman study of substrate effects. Sci. Rep. 2017, 7, 43037.
DOI Google Scholar
[29]

Ribeiro, H. B.; Pimenta, M. A.; de Matos, C. J. S. Raman spectroscopy in black phosphorus. J. Raman Spectrosc. 2018, 49, 76–90.
DOI Google Scholar
[30]

Rigosi, A. F.; Hill, H. M.; Li, Y. L.; Chernikov, A.; Heinz, T. F. Probing interlayer interactions in transition metal dichalcogenide heterostructures by optical spectroscopy: MoS2/WS2 and MoSe2/WSe2. Nano Lett. 2015, 15, 5033–5038.
DOI Google Scholar
[31]

Zheng, H. H.; Wu, B.; Li, S. F.; He, J.; Chen, K. Q.; Liu, Z. W.; Liu, Y. P. Evidence for interlayer coupling and moiré excitons in twisted WS2/WS2 homostructure superlattices. Nano Res. 2023, 16, 3429–3434.
DOI Google Scholar
[32]

Fang, Y. T.; Wang, L.; Sun, Q. L.; Lu, T. P.; Deng, Z.; Ma, Z. G.; Jiang, Y.; Jia, H. Q.; Wang, W. X.; Zhou, J. M. et al. Investigation of temperature-dependent photoluminescence in multi-quantum wells. Sci. Rep. 2015, 5, 12718.
DOI Google Scholar
[33]

Shibata, H. Negative thermal quenching curves in photoluminescence of solids. Jpn. J. Appl. Phys. 1998, 37, 550.
DOI Google Scholar
[34]

Zheng, H. H.; Wu, B.; Li, S. F.; Ding, J. N.; He, J.; Liu, Z. W.; Wang, C. T.; Wang, J. T.; Pan, A. L.; Liu, Y. P. Localization-enhanced moiré exciton in twisted transition metal dichalcogenide heterotrilayer superlattices. Light: Sci. Appl. 2023, 12, 117.
DOI Google Scholar
[35]

Ho, C. H.; Liu, Z. Z. Complete-series excitonic dipole emissions in few layer ReS2 and ReSe2 observed by polarized photoluminescence spectroscopy. Nano Energy 2019, 56, 641–650.
DOI Google Scholar
[36]

He, H. R.; Zheng, H. H.; Wu, B.; Li, S. F.; Ding, J. N.; Liu, Z. W.; Wang, J. T.; Pan, A. L.; Liu, Y. P. Unveiling strain-enhanced moiré exciton localization in twisted van der Waals homostructures. Nano Res. 2024, 17, 3245–3252.
DOI Google Scholar
[37]

Thingna, J.; Manzano, D.; Cao, J. S. Magnetic field induced symmetry breaking in nonequilibrium quantum networks. New J. Phys. 2020, 22, 083026.
DOI Google Scholar
[38]

Huang, B.; Cenker, J.; Zhang, X. O.; Ray, E. L.; Song, T. C.; Taniguchi, T.; Watanabe, K.; McGuire, M. A.; Xiao, D.; Xu, X. D. Tuning inelastic light scattering via symmetry control in the two-dimensional magnet CrI3. Nat. Nanotechnol. 2020, 15, 212–216.
DOI Google Scholar
[39]

Pershan, P. S.; Van der Ziel, J. P.; Malmstrom, L. D. Theoretical discussion of the inverse Faraday effect, Raman scattering, and related phenomena. Phys. Rev. 1966, 143, 574–583.
DOI Google Scholar
[40]

Hogan, C. L. The ferromagnetic Faraday effect at microwave frequencies and its applications. Rev. Mod. Phys. 1953, 25, 253–262.
DOI Google Scholar
[41]

Sharipov, M. Z.; Fayziyeva, Z. X. Faraday effect. Orient. J. Phys. Math. 2022, 2, 1–6.
DOI Google Scholar
[42]

Shaw, J. A. Degree of linear polarization in spectral radiances from water-viewing infrared radiometers. Appl. Opt. 1999, 38, 3157–3165.
DOI Google Scholar
[43]

Al-Qasimi, A.; Korotkova, O.; James, D.; Wolf, E. Definitions of the degree of polarization of a light beam. Opt. Lett. 2007, 32, 1015–1016.
DOI Google Scholar
[44]

Kosowsky, A.; Kahniashvili, T.; Lavrelashvili, G.; Ratra, B. Faraday rotation of the Cosmic Microwave Background polarization by a stochastic magnetic field. Phys. Rev. D 2005, 71, 043006.
DOI Google Scholar
[45]

Tutuc, E.; De Poortere, E. P.; Papadakis, S. J.; Shayegan, M. In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems. Phys. Rev. Lett. 2001, 86, 2858–2861.
DOI Google Scholar
[46]

Brock, C. P.; Dunitz, J. D. Temperature dependence of thermal motion in crystalline anthracene. Acta Cryst. 1990, B46, 795–806.
DOI Google Scholar
[47]

Wu, B.; Zheng, H. H.; Ding, J. N.; Wang, Y. P.; Liu, Z. W.; Liu, Y. P. Observation of interlayer excitons in trilayer type-II transition metal dichalcogenide heterostructures. Nano Res. 2022, 15, 9588–9594.
DOI Google Scholar
[48]

Zheng, H. H.; Wu, B.; Wang, C. T.; Li, S. F.; He, J.; Liu, Z. W.; Wang, J. T.; Yu, G. Q.; Duan, J. A.; Liu, Y. P. Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect. Nano Res. 2023, 16, 10580–10586.
DOI Google Scholar
[49]

Seyler, K. L.; Rivera, P.; Yu, H. Y.; Wilson, N. P.; Ray, E. L.; Mandrus, D. G.; Yan, J. Q.; Yao, W.; Xu, X. D. Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers. Nature 2019, 567, 66–70.
DOI Google Scholar
[50]

Nagler, P.; Ballottin, M. V.; Mitioglu, A. A.; Mooshammer, F.; Paradiso, N.; Strunk, C.; Huber, R.; Chernikov, A.; Christianen, P. C. M.; Schüller, C. et al. Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures. Nat. Commun. 2017, 8, 1551.
DOI Google Scholar
[51]

Liu, E. F.; Barré, E.; van Baren, J.; Wilson, M.; Taniguchi, T.; Watanabe, K.; Cui, Y. T.; Gabor, N. M.; Heinz, T. F.; Chang, Y. C. et al. Signatures of moiré trions in WSe2/MoSe2 heterobilayers. Nature 2021, 594, 46–50.
DOI Google Scholar
[52]

Akamatsu, T.; Ideue, T.; Zhou, L.; Dong, Y.; Kitamura, S.; Yoshii, M.; Yang, D. Y.; Onga, M.; Nakagawa, Y.; Watanabe, K. et al. A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect. Science 2021, 372, 68–72.
DOI Google Scholar
[53]

Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169–11186.
DOI Google Scholar
[54]

Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865–3868.
DOI Google Scholar
[55]

Grimme, S.; Ehrlich, S.; Goerigk, L. Effect of the damping function in dispersion corrected density functional theory. J. Comput. Chem. 2011, 32, 1456–1465.
DOI Google Scholar
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Acknowledgements

Publication history

Received: 12 February 2024
Revised: 04 March 2024
Accepted: 17 March 2024
Published: 02 May 2024

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© Tsinghua University Press 2024

Acknowledgements

Acknowledgements

The authors acknowledge the financial support provided by various funding sources, notably the National Natural Science Foundation of China (No. 52373311), which significantly facilitated this study. The assistance rendered by the High-Performance Complex Manufacturing Key State Lab Project at CSU (No. ZZYJKT2020-12) greatly expedited the research process. Gratitude is extended to the Australian Research Council (ARC Discovery Project, DP180102976) for its substantial contribution to advancing this research agenda. Moreover, J. -T. W. acknowledges support from the National Natural Science Foundation of China (Nos. 11974387 and 92263202), the National Key Research and Development Program of China (No. 2020YFA0711502), and the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDB33000000). The authors also thank the High-Performance Computing Center of Central South University for providing indispensable computing resources for this study.

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