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Research Article

Single-atomic activation on ZnIn2S4 basal planes boosts photocatalytic hydrogen evolution

Jianpeng Cui1,§, Ying Wang1,§, Luxue Lin1,§, Xiaotian Yang1, Xuyu Luo1, Shiying Guo1( ), Xiaoyong Xu1( )
College of Physics Science and Technology, and Center for Interdisciplinary Research, Yangzhou University, Yangzhou 225002, China

§ Jianpeng Cui, Ying Wang, and Luxue Lin contributed equally to this work.

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Abstract

The use of single-atom cocatalysts plays a crucial role in enhancing artificial photocatalysis, where the precise construction of stable and efficient single-atom configuration is essential but remains challenging. Here, we report a simple one-step hydrothermal method for preparing single-atomic Mo modified ZnIn2S4 (Mo-ZIS) nanosheets as a highly active photocatalytic hydrogen evolution (PHE) photocatalyst. The Mo substituting for portion of In atoms in ZIS nanosheets induces the spatial charge redistribution, which not only promotes the separation of photogenerated charge carriers but also optimizes the Gibbs free energy of adsorbing H* on S atoms at basal planes. As a result, Mo-ZIS exhibits an impressive PHE rate as high as 6.71 mmol·g−1·h−1, over 10 times that of the pristine ZIS, with an apparent quantum efficiency (AQE) up to 38.8% at 420 nm. This study gains insights into the coordination configuration and electronic modulation resulting from single-atomic decoration, providing mechanistic cognitions for the development of advanced photocatalysts via non-precious metal atomic modification.

Graphical Abstract

This article reports a successful paradigm on constructing atomic activation centres with local super-exchange and electron interactions to optimize the electronic structure and adsorption energy, enabling the dual effect of single-atom activation centres to enhance charge separation and surface catalysis.

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Nano Research
Pages 5949-5955

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Cite this article:
Cui J, Wang Y, Lin L, et al. Single-atomic activation on ZnIn2S4 basal planes boosts photocatalytic hydrogen evolution. Nano Research, 2024, 17(7): 5949-5955. https://doi.org/10.1007/s12274-024-6617-2
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Received: 11 January 2024
Revised: 05 March 2024
Accepted: 08 March 2024
Published: 12 April 2024
© Tsinghua University Press 2024