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Research Article | Online first | Published: 01 April 2024

Plasmon-enhanced ultra-high photoresponse of single-wall carbon nanotube/copper/silicon near-infrared photodetectors

Show Author's Information Yi-Ming Zhao1,2,  Xian-Gang Hu1,  Chao Chen1,2,  Zuo-Hua Wang3,  An-Ping Wu1,  Hong-Wang Zhang3,  Peng-Xiang Hou1,2( ),  Chang Liu1,2( ),  Hui-Ming Cheng1,4
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, College of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Keywords:
silicon, photodetector, copper, surface plasmon resonance, single wall carbon nanotube
Topics:
Photocatalysis
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Zhao Y-M, Hu X-G, Chen C, et al. Plasmon-enhanced ultra-high photoresponse of single-wall carbon nanotube/copper/silicon near-infrared photodetectors. Nano Research, 2024, https://doi.org/10.1007/s12274-024-6612-7
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Abstract Full text Electronic supplementary material About this article

Single wall carbon nanotube (SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure, however, their detection wavelength range are usually lower than 1100 nm, which limits their application in the infrared band. We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles (NPs) layer between a SWCNT film and a n-Si substrate. It was found that the Cu NPs produce strong surface plasmon resonance (SPR) under laser irradiation, which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band. The responsivity (R) of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W, which is the highest value in the reported plasmon enhanced n-Si based photodetectors, and about 20,000 times higher than that of a SWCNT/Si photodetector. Its R value for 1550 nm wavelength used in optical communications reached ~ 8.2 mA/W, which is 64% higher than the previously reported values of commonly used photodetectors. We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si, which facilitates the generation and transfer of the carriers.


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Electronic supplementary material
About this article

Plasmon-enhanced ultra-high photoresponse of single-wall carbon nanotube/copper/silicon near-infrared photodetectors

Show Author's information Yi-Ming Zhao1,2, Xian-Gang Hu1, Chao Chen1,2, Zuo-Hua Wang3, An-Ping Wu1, Hong-Wang Zhang3, Peng-Xiang Hou1,2( ), Chang Liu1,2( ), Hui-Ming Cheng1,4
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, College of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, China
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

Abstract

Single wall carbon nanotube (SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure, however, their detection wavelength range are usually lower than 1100 nm, which limits their application in the infrared band. We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles (NPs) layer between a SWCNT film and a n-Si substrate. It was found that the Cu NPs produce strong surface plasmon resonance (SPR) under laser irradiation, which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band. The responsivity (R) of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W, which is the highest value in the reported plasmon enhanced n-Si based photodetectors, and about 20,000 times higher than that of a SWCNT/Si photodetector. Its R value for 1550 nm wavelength used in optical communications reached ~ 8.2 mA/W, which is 64% higher than the previously reported values of commonly used photodetectors. We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si, which facilitates the generation and transfer of the carriers.

Keywords: silicon, photodetector, copper, surface plasmon resonance, single wall carbon nanotube

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Publication history
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Acknowledgements

Publication history

Received: 18 January 2024
Revised: 26 February 2024
Accepted: 08 March 2024
Published: 01 April 2024

Copyright

© Tsinghua University Press 2024

Acknowledgements

Acknowledgements

This work was supported by the Ministry of Science and Technology of China (No. 2022YFA1203303), the National Natural Science Foundation of China (Nos. 52072375, 52130209, and 52188101), Liaoning Revitalization Talents Program (No. XLYC2002037), and the Basic Research Project of Natural Science Foundation of Shandong Province (No. ZR2019ZD49).

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