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Research Article | Online first | Published: 29 February 2024

In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

Show Author's Information Menglei Zhu1,  Kunxuan Liu2,  Di Wu1( ),  Yunrui Jiang2,  Xue Li1,  Pei Lin1,  Zhifeng Shi1,  Xinjian Li1,  Ran Ding3,  Yalun Tang2,  Xuechao Yu4,  Longhui Zeng1( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Keywords:
imaging, Schottky junction, MoTe2, broadband photodetection, position sensitive detector
Topics:
Photodetectors
Cite this article:
Zhu M, Liu K, Wu D, et al. In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing. Nano Research, 2024, https://doi.org/10.1007/s12274-024-6510-z
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Abstract Full text Electronic supplementary material About this article

High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for military and civilian purposes. Recently, the gapless electronic structures and unique optoelectrical properties have made the two-dimensional (2D) topological semimetals promising candidates for the realization of multifunctional optoelectronic devices. Here, we demonstrated the in-situ construction of high-performance 1T’-MoTe2/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer. The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron, an ultrafast response time of ~ 160 ns, and a large specific detectivity of over 109 Jones in mid-infrared (MIR) range surpasses that of most 2D materials-based IR sensors, approaching the performance of commercial IR photodiodes. The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature. All these outstanding detection features have enabled the demonstration of position-sensitive detection applications. It demonstrates an exceptional position sensitivity of 14.9 mV/mm, an outstanding nonlinearity of 6.44%, and commendable trajectory tracking and optoelectronic demodulation capabilities. This study not only offers a promising route towards room-temperature MIR optoelectronic applications, but also demonstrates a great potential for application in optical sensing systems.


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Electronic supplementary material
About this article

In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

Show Author's information Menglei Zhu1, Kunxuan Liu2, Di Wu1( ), Yunrui Jiang2, Xue Li1, Pei Lin1, Zhifeng Shi1, Xinjian Li1, Ran Ding3, Yalun Tang2, Xuechao Yu4, Longhui Zeng1( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Abstract

High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for military and civilian purposes. Recently, the gapless electronic structures and unique optoelectrical properties have made the two-dimensional (2D) topological semimetals promising candidates for the realization of multifunctional optoelectronic devices. Here, we demonstrated the in-situ construction of high-performance 1T’-MoTe2/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer. The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron, an ultrafast response time of ~ 160 ns, and a large specific detectivity of over 109 Jones in mid-infrared (MIR) range surpasses that of most 2D materials-based IR sensors, approaching the performance of commercial IR photodiodes. The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature. All these outstanding detection features have enabled the demonstration of position-sensitive detection applications. It demonstrates an exceptional position sensitivity of 14.9 mV/mm, an outstanding nonlinearity of 6.44%, and commendable trajectory tracking and optoelectronic demodulation capabilities. This study not only offers a promising route towards room-temperature MIR optoelectronic applications, but also demonstrates a great potential for application in optical sensing systems.

Keywords: imaging, Schottky junction, MoTe2, broadband photodetection, position sensitive detector

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Publication history
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Acknowledgements

Publication history

Received: 23 December 2023
Revised: 11 January 2024
Accepted: 21 January 2024
Published: 29 February 2024

Copyright

© Tsinghua University Press 2024

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. U22A20138, 62374149, and 62375279). We also thank the support from the Collaborative Innovation Center of Suzhou Nano Science & Technology. The authors are grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO).

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