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Nano Research 2024, 17(2): 743-762 https://doi.org/10.1007/s12274-024-6447-2
Review Article | Issue | Published: 24 January 2024

Two-dimensional magnetic materials for spintronic applications

Show Author's Information Shivam N. Kajale1,§,  Jad Hanna1,2,§,  Kyuho Jang1,§,  Deblina Sarkar1( )
MIT Media Lab, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, 8092, Switzerland

§ Shivam N. Kajale, Jad Hanna, and Kyuho Jang contributed equally to this work.

Keywords:
magnetism, spintronics, van der Waals, spin-orbit torque, magnetic tunnel junction (MTJ)
Topics:
Ferromagnetic materials FerromagnetismMagnetic devices Magnetic materials Magnetic propertiesMagnetism MagnetsNanoelectronics NanomagnaticsNeuromorphic Computing
Cite this article:
Kajale SN, Hanna J, Jang K, et al. Two-dimensional magnetic materials for spintronic applications. Nano Research, 2024, 17(2): 743-762. https://doi.org/10.1007/s12274-024-6447-2
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Abstract Full text About this article

Spintronic devices are driving new paradigms of bio-inspired, energy efficient computation like neuromorphic stochastic computing and in-memory computing. They have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent memories. To meet the growing demands from such diverse applications, there is need for innovation in materials and device designs which can be scaled and adapted according to the application. Two-dimensional (2D) magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of magnetism. In this review, we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic devices. We provide an account of the various relevant material discoveries, demonstrations of current and voltage-based control of magnetism and reported device systems, while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.


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About this article

Two-dimensional magnetic materials for spintronic applications

Show Author's information Shivam N. Kajale1,§, Jad Hanna1,2,§, Kyuho Jang1,§, Deblina Sarkar1( )
MIT Media Lab, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, 8092, Switzerland

§ Shivam N. Kajale, Jad Hanna, and Kyuho Jang contributed equally to this work.

Abstract

Spintronic devices are driving new paradigms of bio-inspired, energy efficient computation like neuromorphic stochastic computing and in-memory computing. They have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent memories. To meet the growing demands from such diverse applications, there is need for innovation in materials and device designs which can be scaled and adapted according to the application. Two-dimensional (2D) magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of magnetism. In this review, we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic devices. We provide an account of the various relevant material discoveries, demonstrations of current and voltage-based control of magnetism and reported device systems, while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.

Keywords: magnetism, spintronics, van der Waals, spin-orbit torque, magnetic tunnel junction (MTJ)

References(171)

[1]

Žutić, I.; Fabian, J.; Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 2004, 76, 323–410.
DOI Google Scholar
[2]

Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.; Daughton, J. M.; von Molnár, S.; Roukes, M. L.; Chtchelkanova, A. Y.; Treger, D. M. Spintronics: A spin-based electronics vision for the future. Science 2001, 294, 1488–1495.
DOI Google Scholar
[3]

Baibich, M. N.; Broto, J. M.; Fert, A.; Van Dau, F. N.; Petroff, F.; Etienne, P.; Creuzet, G.; Friederich, A.; Chazelas, J. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys. Rev. Lett. 1988, 61, 2472–2475.
DOI Google Scholar
[4]

Chappert, C.; Fert, A.; Van Dau, F. N. The emergence of spin electronics in data storage. Nat. Mater. 2007, 6, 813–823.
DOI Google Scholar
[5]

Camsari, K. Y.; Sutton, B. M.; Datta, S. P-bits for probabilistic spin logic. Appl. Phys. Rev. 2019, 6, 011305.
DOI Google Scholar
[6]

Sengupta, A.; Roy, K. Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing. Appl. Phys. Rev. 2017, 4, 041105.
DOI Google Scholar
[7]

Chumak, A. V.; Vasyuchka, V. I.; Serga, A. A.; Hillebrands, B. Magnon spintronics. Nat. Phys. 2015, 11, 453–461.
DOI Google Scholar
[8]

Locatelli, N.; Cros, V.; Grollier, J. Spin-torque building blocks. Nat. Mater. 2014, 13, 11–20.
DOI Google Scholar
[9]

Loss, D.; DiVincenzo, D. P.; DiVincenzo, P. Quantum computation with quantum dots. Phys. Rev. A 1998, 57, 120–126.
DOI Google Scholar
[10]

Jung, S.; Lee, H.; Myung, S.; Kim, H.; Yoon, S. K.; Kwon, S. W.; Ju, Y. M.; Kim, M.; Yi, W.; Han, S. et al. A crossbar array of magnetoresistive memory devices for in-memory computing. Nature 2022, 601, 211–216.
DOI Google Scholar
[11]

Huang, K. F.; Wang, D. S.; Tsai, M. H.; Lin, H. H.; Lai, C. H. Initialization-free multilevel states driven by spin-orbit torque switching. Adv. Mater. 2017, 29, 1601575.
DOI Google Scholar
[12]

Liu, J. H.; Xu, T.; Feng, H. M.; Zhao, L.; Tang, J. S.; Fang, L.; Jiang, W. J. Compensated ferrimagnet based artificial synapse and neuron for ultrafast neuromorphic computing. Adv. Funct. Mater. 2022, 32, 2107870.
DOI Google Scholar
[13]

Zhou, J.; Zhao, T. Y.; Shu, X. Y.; Liu, L.; Lin, W. N.; Chen, S. H.; Shi, S.; Yan, X. B.; Liu, X. G.; Chen, J. S. Spin-orbit torque-induced domain nucleation for neuromorphic computing. Adv. Mater. 2021, 33, 2103672.
DOI Google Scholar
[14]

Cao, Y.; Rushforth, A.; Sheng, Y.; Zheng, H. Z.; Wang, K. Y. Tuning a binary ferromagnet into a multistate synapse with spin-orbit-torque-induced plasticity. Adv. Funct. Mater. 2019, 29, 1808104.
DOI Google Scholar
[15]

Kurenkov, A.; DuttaGupta, S.; Zhang, C. L.; Fukami, S.; Horio, Y.; Ohno, H. Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching. Adv. Mater. 2019, 31, 1900636.
DOI Google Scholar
[16]

Mishra, R.; Kumar, D.; Yang, H. Oxygen-migration-based spintronic device emulating a biological synapse. Phys. Rev. Appl. 2019, 11, 054065.
DOI Google Scholar
[17]

Cai, J. L.; Fang, B.; Zhang, L. K.; Lv, W. X.; Zhang, B. S.; Zhou, T. J.; Finocchio, G.; Zeng, Z. M. Voltage-controlled spintronic stochastic neuron based on a magnetic tunnel junction. Phys. Rev. Appl. 2019, 11, 034015.
DOI Google Scholar
[18]

Borders, W. A.; Pervaiz, A. Z.; Fukami, S.; Camsari, K. Y.; Ohno, H.; Datta, S. Integer factorization using stochastic magnetic tunnel junctions. Nature 2019, 573, 390–393.
DOI Google Scholar
[19]

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O’Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y. et al. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett. 2012, 100, 132408.
DOI Google Scholar
[20]

Safranski, C.; Kaiser, J.; Trouilloud, P.; Hashemi, P.; Hu, G. H.; Sun, J. Z. Demonstration of nanosecond operation in stochastic magnetic tunnel junctions. Nano Lett. 2021, 21, 2040–2045.
DOI Google Scholar
[21]

Safranski, C.; Hu, G. H.; Sun, J. Z.; Hashemi, P.; Brown, S. L.; Buzi, L.; D’Emic, C. P.; Edwards, E. R. J.; Galligan, E.; Gottwald, M. G. et al. Reliable sub-nanosecond switching in magnetic tunnel junctions for MRAM applications. IEEE Trans. Electron Devices 2022, 69, 7180–7183.
DOI Google Scholar
[22]

Sarkar, D.; Xie, X. J.; Liu, W.; Cao, W.; Kang, J. H.; Gong, Y. J.; Kraemer, S.; Ajayan, P. M.; Banerjee, K. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature 2015, 526, 91–95.
DOI Google Scholar
[23]

Liu, C. S.; Chen, H. W.; Wang, S. Y.; Liu, Q.; Jiang, Y. G.; Zhang, D. W.; Liu, M.; Zhou, P. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 2020, 15, 545–557.
DOI Google Scholar
[24]
Pillai, S. C.; Ganguly, P. 2D Materials for Energy Storage and Conversion; IOP Publishing: Bristol, 2021.
DOI
[25]

Kajale, S. N.; Yadav, S.; Cai, Y. B.; Joy, B.; Sarkar, D. 2D material based field effect transistors and nanoelectromechanical systems for sensing applications. iScience 2021, 24, 103513
DOI Google Scholar
[26]

Sarkar, D.; Liu, W.; Xie, X. J.; Anselmo, A. C.; Mitragotri, S.; Banerjee, K. MoS2 field-effect transistor for next-generation label-free biosensors. ACS Nano 2014, 8, 3992–4003.
DOI Google Scholar
[27]

Yang, H.; Valenzuela, S. O.; Chshiev, M.; Couet, S.; Dieny, B.; Dlubak, B.; Fert, A.; Garello, K.; Jamet, M.; Jeong, D. E. et al. Two-dimensional materials prospects for non-volatile spintronic memories. Nature 2022, 606, 663–673.
DOI Google Scholar
[28]

Gong, C.; Zhang, X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 2019, 363, eaav4450.
DOI Google Scholar
[29]

Khan, Y.; Obaidulla, S. M.; Habib, M. R.; Gayen, A.; Liang, T.; Wang, X. F.; Xu, M. S. Recent breakthroughs in two-dimensional van der Waals magnetic materials and emerging applications. Nano Today 2020, 34, 100902.
DOI Google Scholar
[30]

Li, H.; Ruan, S. C.; Zeng, Y. J. Intrinsic van der Waals magnetic materials from bulk to the 2D limit: New frontiers of spintronics. Adv. Mater. 2019, 31, 1900065.
DOI Google Scholar
[31]

Gibertini, M.; Koperski, M.; Morpurgo, A. F.; Novoselov, K. S. Magnetic 2D materials and heterostructures. Nat. Nanotechnol. 2019, 14, 408–419.
DOI Google Scholar
[32]

Argyres, P. N. Theory of the Faraday and Kerr effects in ferromagnetics. Phys. Rev. 1955, 97, 334–345.
DOI Google Scholar
[33]

Huang, B.; Clark, G.; Navarro-Moratalla, E.; Klein, D. R.; Cheng, R.; Seyler, K. L.; Zhong, D.; Schmidgall, E.; McGuire, M. A.; Cobden, D. H. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 2017, 546, 270–273.
DOI Google Scholar
[34]

Gong, C.; Li, L.; Li, Z. L.; Ji, H. W.; Stern, A.; Xia, Y.; Cao, T.; Bao, W.; Wang, C. Z.; Wang, Y. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 2017, 546, 265–269.
DOI Google Scholar
[35]

Fei, Z. Y.; Huang, B.; Malinowski, P.; Wang, W. B.; Song, T. C.; Sanchez, J.; Yao, W.; Xiao, D.; Zhu, X. Y.; May, A. F. et al. Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat. Mater. 2018, 17, 778–782.
DOI Google Scholar
[36]

Gupta, V.; Cham, T. M.; Stiehl, G. M.; Bose, A.; Mittelstaedt, J. A.; Kang, K. F.; Jiang, S. W.; Mak, K. F.; Shan, J.; Buhrman, R. A. et al. Manipulation of the van der Waals magnet Cr2Ge2Te6 by spin-orbit torques. Nano Lett. 2020, 20, 7482–7488.
DOI Google Scholar
[37]

Klein, D. R.; MacNeill, D.; Lado, J. L.; Soriano, D.; Navarro-Moratalla, E.; Watanabe, K.; Taniguchi, T.; Manni, S.; Canfield, P.; Fernández-Rossier, J. et al. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling. Science 2018, 360, 1218–1222.
DOI Google Scholar
[38]

Thiel, L.; Wang, Z.; Tschudin, M. A.; Rohner, D.; Gutiérrez-Lezama, I.; Ubrig, N.; Gibertini, M.; Giannini, E.; Morpurgo, A. F.; Maletinsky, P. Probing magnetism in 2D materials at the nanoscale with single-spin microscopy. Science 2019, 364, 973–976.
DOI Google Scholar
[39]

Chen, H.; Asif, S.; Dolui, K.; Wang, Y.; Támara-Isaza, J.; Goli, V. M. L. D. P.; Whalen, M.; Wang, X. H.; Chen, Z. J.; Zhang, H. Q. et al. Above-room-temperature ferromagnetism in thin van der Waals flakes of cobalt-substituted Fe5GeTe2. ACS Appl. Mater. Interfaces 2023, 15, 3287–3296.
DOI Google Scholar
[40]

Huang, M. Q.; Zhou, J. C.; Chen, D.; Lu, H. Y.; McLaughlin, N. J.; Li, S. L.; Alghamdi, M.; Djugba, D.; Shi, J.; Wang, H. et al. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat. Commun. 2022, 13, 5369.
DOI Google Scholar
[41]

Kumar, P.; Fabre, F.; Durand, A.; Clua-Provost, T.; Li, J.; Edgar, J. H.; Rougemaille, N.; Coraux, J.; Marie, X.; Renucci, P. et al. Magnetic imaging with spin defects in hexagonal boron nitride. Phys. Rev. Appl. 2022, 18, L061002.
DOI Google Scholar
[42]

Healey, A. J.; Scholten, S. C.; Yang, T.; Scott, J. A.; Abrahams, G. J.; Robertson, I. O.; Hou, X. F.; Guo, Y. F.; Rahman, S.; Lu, Y. et al. Quantum microscopy with van der Waals heterostructures. Nat. Phys. 2023, 19, 87–91.
DOI Google Scholar
[43]

Mermin, N. D.; Wagner, H. Absence of ferromagnetism or antiferromagnetism in one- or two-dimensional isotropic heisenberg models. Phys. Rev. Lett. 1966, 17, 1133–1136.
DOI Google Scholar
[44]

Hohenberg, P. C. Existence of long-range order in one and two dimensions. Phys. Rev. 1967, 158, 383–386.
DOI Google Scholar
[45]

Onsager, L. Crystal statistics I. A two-dimensional model with an order-disorder transition. Phys. Rev. 1944, 65, 117–149.
DOI Google Scholar
[46]

Henkel, M.; Andrieu, S.; Bauer, P.; Piecuch, M. Finite-size scaling in thin Fe/Ir(100) layers. Phys. Rev. Lett. 1998, 80, 4783–4786.
DOI Google Scholar
[47]

Zhang, R. J.; Willis, R. F. Thickness-dependent curie temperatures of ultrathin magnetic films: Effect of the range of spin–spin interactions. Phys. Rev. Lett. 2001, 86, 2665–2668.
DOI Google Scholar
[48]

Jiang, X.; Liu, Q. X.; Xing, J. P.; Liu, N. S.; Guo, Y.; Liu, Z. F.; Zhao, J. J. Recent progress on 2D magnets: Fundamental mechanism, structural design and modification. Appl. Phys. Rev. 2021, 8, 031305.
DOI Google Scholar
[49]

Carteaux, V.; Brunet, D.; Ouvrard, G.; Andre, G. Crystallographic, magnetic and electronic structures of a new layered ferromagnetic compound Cr2Ge2Te6. J. Phys. Condens. Matter 1995, 7, 69–87.
DOI Google Scholar
[50]

Sun, Y.; Xiao, R. C.; Lin, G. T.; Zhang, R. R.; Ling, L. S.; Ma, Z. W.; Luo, X.; Lu, W. J.; Sun, Y. P.; Sheng, Z. G. Effects of hydrostatic pressure on spin-lattice coupling in two-dimensional ferromagnetic Cr2Ge2Te6. Appl. Phys. Lett. 2018, 112, 072409.
DOI Google Scholar
[51]

Verzhbitskiy, I. A.; Kurebayashi, H.; Cheng, H. X.; Zhou, J.; Khan, S.; Feng, Y. P.; Eda, G. Controlling the magnetic anisotropy in Cr2Ge2Te6 by electrostatic gating. Nat. Electron. 2020, 3, 460–465.
DOI Google Scholar
[52]

Wang, N. Z.; Tang, H. B.; Shi, M. Z.; Zhang, H.; Zhuo, W. Z.; Liu, D. Y.; Meng, F. B.; Ma, L. K.; Ying, J. J.; Zou, L. J. et al. Transition from ferromagnetic semiconductor to ferromagnetic metal with enhanced curie temperature in Cr2Ge2Te6 via organic ion intercalation. J. Am. Chem. Soc. 2019, 141, 17166–17173.
DOI Google Scholar
[53]

Mak, K. F.; Shan, J.; Ralph, D. C. Probing and controlling magnetic states in 2D layered magnetic materials. Nat. Rev. Phys. 2019, 1, 646–661.
DOI Google Scholar
[54]

Huang, B.; Clark, G.; Klein, D. R.; MacNeill, D.; Navarro-Moratalla, E.; Seyler, K. L.; Wilson, N.; McGuire, M. A.; Cobden, D. H.; Xiao, D. et al. Electrical control of 2D magnetism in bilayer CrI3. Nat. Nanotechnol. 2018, 13, 544–548.
DOI Google Scholar
[55]

Jiang, S. W.; Shan, J.; Mak, K. F. Electric-field switching of two-dimensional van der Waals magnets. Nat. Mater. 2018, 17, 406–410.
DOI Google Scholar
[56]

Jiang, S. W.; Li, L. Z.; Wang, Z. F.; Mak, K. F.; Shan, J. Controlling magnetism in 2D CrI3 by electrostatic doping. Nat. Nanotechnol. 2018, 13, 549–553.
DOI Google Scholar
[57]

Li, T. X.; Jiang, S. W.; Sivadas, N.; Wang, Z. F.; Xu, Y.; Weber, D.; Goldberger, J. E.; Watanabe, K.; Taniguchi, T.; Fennie, C. J. et al. Pressure-controlled interlayer magnetism in atomically thin CrI3. Nat. Mater. 2019, 18, 1303–1308.
DOI Google Scholar
[58]

Lado, J. L.; Fernández-Rossier, J. On the origin of magnetic anisotropy in two dimensional CrI3. 2D Mater. 2017, 4, 035002.
DOI Google Scholar
[59]

Niu, B.; Su, T.; Francisco, B. A.; Ghosh, S.; Kargar, F.; Huang, X.; Lohmann, M.; Li, J. X.; Xu, Y. D.; Taniguchi, T. et al. Coexistence of magnetic orders in two-dimensional magnet CrI3. Nano Lett. 2020, 20, 553–558.
DOI Google Scholar
[60]

Liu, Y.; Wu, L. J.; Tong, X.; Li, J.; Tao, J.; Zhu, Y. M.; Petrovic, C. Thickness-dependent magnetic order in CrI3 single crystals. Sci. Rep. 2019, 9, 13599.
DOI Google Scholar
[61]

Soriano, D.; Cardoso, C.; Fernández-Rossier, J. Interplay between interlayer exchange and stacking in CrI3 bilayers. Solid State Commun. 2019, 299, 113662.
DOI Google Scholar
[62]

Jiang, P. H.; Wang, C.; Chen, D. C.; Zhong, Z. C.; Yuan, Z.; Lu, Z. Y.; Ji, W. Stacking tunable interlayer magnetism in bilayer CrI3. Phys. Rev. B 2019, 99, 144401.
DOI Google Scholar
[63]

Kumar Gudelli, V.; Guo, G. Y. Magnetism and magneto-optical effects in bulk and few-layer CrI3: A theoretical GGA + U study. New J. Phys. 2019, 21, 053012.
DOI Google Scholar
[64]

Meseguer-Sánchez, J.; Popescu, C.; García-Muñoz, J. L.; Luetkens, H.; Taniashvili, G.; Navarro-Moratalla, E.; Guguchia, Z.; Santos, E. J. G. Coexistence of structural and magnetic phases in van der Waals magnet CrI3. Nat. Commun. 2021, 12, 6265.
DOI Google Scholar
[65]

Tan, C.; Lee, J.; Jung, S. G.; Park, T.; Albarakati, S.; Partridge, J.; Field, M. R.; McCulloch, D. G.; Wang, L.; Lee, C. Hard magnetic properties in nanoflake van der Waals Fe3GeTe2. Nat. Commun. 2018, 9, 1554.
DOI Google Scholar
[66]

Liu, S. S.; Yuan, X.; Zou, Y. C.; Sheng, Y.; Huang, C.; Zhang, E. Z.; Ling, J. W.; Liu, Y. W.; Wang, W. Y.; Zhang, C. et al. Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy. npj 2D Mater. Appl. 2017, 1, 30.
DOI Google Scholar
[67]

Deng, Y. J.; Yu, Y. J.; Song, Y. C.; Zhang, J. Z.; Wang, N. Z.; Sun, Z. Y.; Yi, Y. F.; Wu, Y. Z.; Wu, S. W.; Zhu, J. Y. et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 2018, 563, 94–99.
DOI Google Scholar
[68]

Seo, J.; Kim, D. Y.; An, E. S.; Kim, K.; Kim, G. Y.; Hwang, S. Y.; Kim, D. W.; Jang, B. G.; Kim, H.; Eom, G. et al. Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal. Sci. Adv. 2020, 6, eaay8912.
DOI Google Scholar
[69]

Wang, H. T.; Lu, H. C.; Guo, Z. X.; Li, A.; Wu, P. C.; Li, J.; Xie, W. R.; Sun, Z. M.; Li, P.; Damas, H. et al. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature. Nat. Commun. 2023, 14, 2483.
DOI Google Scholar
[70]

May, A. F.; Ovchinnikov, D.; Zheng, Q.; Hermann, R.; Calder, S.; Huang, B.; Fei, Z. Y.; Liu, Y. H.; Xu, X. D.; McGuire, M. A. Ferromagnetism near room temperature in the cleavable van der Waals crystal Fe5GeTe2. ACS Nano 2019, 13, 4436–4442.
DOI Google Scholar
[71]

Zhang, G. J.; Guo, F.; Wu, H.; Wen, X. K.; Yang, L.; Jin, W.; Zhang, W. F.; Chang, H. X. Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy. Nat. Commun. 2022, 13, 5067.
DOI Google Scholar
[72]

Wen, Y.; Liu, Z. H.; Zhang, Y.; Xia, C. X.; Zhai, B. X.; Zhang, X. H.; Zhai, G. H.; Shen, C.; He, P.; Cheng, R. Q. et al. Tunable room-temperature ferromagnetism in two-dimensional Cr2Te3. Nano Lett. 2020, 20, 3130–3139.
DOI Google Scholar
[73]

Chua, R.; Zhou, J.; Yu, X. J.; Yu, W.; Gou, J.; Zhu, R.; Zhang, L.; Liu, M. Z.; Breese, M. B. H.; Chen, W. et al. Room temperature ferromagnetism of monolayer chromium telluride with perpendicular magnetic anisotropy. Adv. Mater. 2021, 33, 2103360.
DOI Google Scholar
[74]

Sun, X. D.; Li, W. Y.; Wang, X.; Sui, Q.; Zhang, T. Y.; Wang, Z.; Liu, L.; Li, D.; Feng, S.; Zhong, S.; Y. et al. Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2. Nano Res. 2020, 13, 3358–3363.
DOI Google Scholar
[75]

Meng, L. J.; Zhou, Z.; Xu, M. Q.; Yang, S. Q.; Si, K. P.; Liu, L. X.; Wang, X. G.; Jiang, H. N.; Li, B. X.; Qin, P. X. et al. Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe2 grown by chemical vapor deposition. Nat. Commun. 2021, 12, 809.
DOI Google Scholar
[76]

Seo, J.; An, E. S.; Park, T.; Hwang, S. Y.; Kim, G. Y.; Song, K.; Noh, W. S.; Kim, J. Y.; Choi, G. S.; Choi, M. et al. Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet. Nat. Commun. 2021, 12, 2844.
DOI Google Scholar
[77]

Chu, J. W.; Zhang, Y.; Wen, Y.; Qiao, R. X.; Wu, C. C.; He, P.; Yin, L.; Cheng, R. Q.; Wang, F.; Wang, Z. X. et al. Sub-millimeter-scale growth of one-unit-cell-thick ferrimagnetic Cr2S3 nanosheets. Nano Lett. 2019, 19, 2154–2161.
DOI Google Scholar
[78]

Cui, F. F.; Zhao, X. X.; Xu, J. J.; Tang, B.; Shang, Q. Y.; Shi, J. P.; Huan, Y. H.; Liao, J. H.; Chen, Q.; Hou, Y. L. et al. Controlled growth and thickness-dependent conduction-type transition of 2D ferrimagnetic Cr2S3 semiconductors. Adv. Mater. 2020, 32, 1905896.
DOI Google Scholar
[79]

Roy, A.; Guchhait, S.; Dey, R.; Pramanik, T.; Hsieh, C. C.; Rai, A.; Banerjee, S. K. Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films. ACS Nano 2015, 9, 3772–3779.
DOI Google Scholar
[80]

Burn, D. M.; Duffy, L. B.; Fujita, R.; Zhang, S. L.; Figueroa, A. I.; Herrero-Martin, J.; van der Laan, G.; Hesjedal, T. Cr2Te3 thin films for integration in magnetic topological insulator heterostructures. Sci. Rep. 2019, 9, 10793.
DOI Google Scholar
[81]

Li, H. X.; Wang, L. J.; Chen, J. S.; Yu, T.; Zhou, L.; Qiu, Y.; He, H. T.; Ye, F.; Sou, I. K.; Wang, G. Molecular beam epitaxy grown Cr2Te3 thin films with tunable curie temperatures for spintronic devices. ACS Appl. Nano Mater. 2019, 2, 6809–6817.
DOI Google Scholar
[82]

Chen, C.; Chen, X. D.; Wu, C. W.; Wang, X.; Ping, Y.; Wei, X.; Zhou, X.; Lu, J. B.; Zhu, L. J.; Zhou, J. D. et al. Air-stable 2D Cr5Te8 nanosheets with thickness-tunable ferromagnetism. Adv. Mater. 2022, 34, 2107512.
DOI Google Scholar
[83]

Wang, Z.; Gibertini, M.; Dumcenco, D.; Taniguchi, T.; Watanabe, K.; Giannini, E.; Morpurgo, A. F. Determining the phase diagram of atomically thin layered antiferromagnet CrCl3. Nat. Nanotechnol. 2019, 14, 1116–1122.
DOI Google Scholar
[84]

Bedoya-Pinto, A.; Ji, J. R.; Pandeya, A. K.; Gargiani, P.; Valvidares, M.; Sessi, P.; Taylor, J. M.; Radu, F.; Chang, K.; Parkin, S. S. P. Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer. Science 2021, 374, 616–620.
DOI Google Scholar
[85]

Son, J.; Son, S.; Park, P.; Kim, M.; Tao, Z.; Oh, J.; Lee, T.; Lee, S.; Kim, J.; Zhang, K. X. et al. Air-stable and layer-dependent ferromagnetism in atomically thin van der Waals CrPS4. ACS Nano 2021, 15, 16904–16912.
DOI Google Scholar
[86]

Xiao, H.; Zhuang, W. Z.; Loh, L.; Liang, T.; Gayen, A.; Ye, P.; Bosman, M.; Eda, G.; Wang, X. F.; Xu, M. S. Van der Waals epitaxial growth of 2D layered room-temperature ferromagnetic CrS2. Adv. Mater. Interfaces 2022, 9, 2201353.
DOI Google Scholar
[87]

Lee, K.; Dismukes, A. H.; Telford, E. J.; Wiscons, R. A.; Wang, J.; Xu, X. D.; Nuckolls, C.; Dean, C. R.; Roy, X.; Zhu, X. Y. Magnetic order and symmetry in the 2D semiconductor CrSBr. Nano Lett. 2021, 21, 3511–3517.
DOI Google Scholar
[88]

Telford, E. J.; Dismukes, A. H.; Dudley, R. L.; Wiscons, R. A.; Lee, K.; Chica, D. G.; Ziebel, M. E.; Han, M. G.; Yu, J.; Shabani, S. et al. Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor. Nat. Mater. 2022, 21, 754–760.
DOI Google Scholar
[89]

Zhang, Y.; Chu, J. W.; Yin, L.; Shifa, T. A.; Cheng, Z. Z.; Cheng, R. Q.; Wang, F.; Wen, Y.; Zhan, X. Y.; Wang, Z. X. et al. Ultrathin magnetic 2D single-crystal CrSe. Adv. Mater. 2019, 31, 1900056.
DOI Google Scholar
[90]

Wang, M. S.; Kang, L. X.; Su, J. W.; Zhang, L. M.; Dai, H. W.; Cheng, H.; Han, X. T.; Zhai, T. Y.; Liu, Z.; Han, J. B. Two-dimensional ferromagnetism in CrTe flakes down to atomically thin layers. Nanoscale 2020, 12, 16427–16432.
DOI Google Scholar
[91]

Zhao, D. P.; Zhang, L. G.; Malik, I. A.; Liao, M. H.; Cui, W. Q.; Cai, X. Q.; Zheng, C.; Li, L. X.; Hu, X. P.; Zhang, D. et al. Observation of unconventional anomalous Hall effect in epitaxial CrTe thin films. Nano Res. 2018, 11, 3116–3121.
DOI Google Scholar
[92]

Zhao, Z. J.; Zhou, J.; Liu, L. H.; Liu, N. S.; Huang, J. Q.; Zhang, B.; Li, W.; Zeng, Y.; Zhang, T.; Ji, W. et al. Two-dimensional room-temperature magnetic nonstoichiometric Fe7Se8 nanocrystals: Controllable synthesis and magnetic behavior. Nano Lett. 2022, 22, 1242–1250.
DOI Google Scholar
[93]

Husremović, S.; Groschner, C. K.; Inzani, K.; Craig, I. M.; Bustillo, K. C.; Ercius, P.; Kazmierczak, N. P.; Syndikus, J.; Van Winkle, M.; Aloni, S. et al. Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide. J. Am. Chem. Soc. 2022, 144, 12167–12176.
DOI Google Scholar
[94]

Deng, Y. J.; Yu, Y. J.; Shi, M. Z.; Guo, Z. X.; Xu, Z. H.; Wang, J.; Chen, X. H.; Zhang, Y. B. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4. Science 2020, 367, 895–900.
DOI Google Scholar
[95]

Long, G.; Henck, H.; Gibertini, M.; Dumcenco, D.; Wang, Z.; Taniguchi, T.; Watanabe, K.; Giannini, E.; Morpurgo, A. F. Persistence of magnetism in atomically thin MnPS3 crystals. Nano Lett. 2020, 20, 2452–2459.
DOI Google Scholar
[96]

Ni, Z. L.; Haglund, A. V.; Wang, H.; Xu, B.; Bernhard, C.; Mandrus, D. G.; Qian, X.; Mele, E. J.; Kane, C. L.; Wu, L. Imaging the Néel vector switching in the monolayer antiferromagnet MnPSe3 with strain-controlled ising order. Nat. Nanotechnol. 2021, 16, 782–787.
DOI Google Scholar
[97]

Aapro, M.; Huda, M. N.; Karthikeyan, J.; Kezilebieke, S.; Ganguli, S. C.; Herrero, H. G.; Huang, X.; Liljeroth, P.; Komsa, H. P. Synthesis and properties of monolayer mnse with unusual atomic structure and antiferromagnetic ordering. ACS Nano 2021, 15, 13794–13802.
DOI Google Scholar
[98]

Su, J. W.; Wang, M. S.; Liu, G. H.; Li, H. Q.; Han, J. B.; Zhai, T. Y. Air-stable 2D intrinsic ferromagnetic Ta3FeS6 with four months durability. Adv. Sci. 2020, 7, 2001722.
DOI Google Scholar
[99]

Zhang, F.; Zheng, B. Y.; Sebastian, A.; Olson, D. H.; Liu, M. Z.; Fujisawa, K.; Pham, Y. T. H.; Jimenez, V. O.; Kalappattil, V.; Miao, L. X. et al. Monolayer vanadium-doped tungsten disulfide: A room-temperature dilute magnetic semiconductor. Adv. Sci. 2020, 7, 2001174.
DOI Google Scholar
[100]

Pham, Y. T. H.; Liu, M. Z.; Jimenez, V. O.; Yu, Z. H.; Kalappattil, V.; Zhang, F.; Wang, K.; Williams, T.; Terrones, M.; Phan, M. H. Tunable ferromagnetism and thermally induced spin flip in vanadium-doped tungsten diselenide monolayers at room temperature. Adv. Mater. 2020, 32, 2003607.
DOI Google Scholar
[101]

Lyu, B.; Gao, Y. F.; Zhang, Y. J.; Wang, L.; Wu, X. H.; Chen, Y. N.; Zhang, J. S.; Li, G. M.; Huang, Q. L.; Zhang, N. P. et al. Probing the ferromagnetism and spin wave gap in VI3 by helicity-resolved Raman spectroscopy. Nano Lett. 2020, 20, 6024–6031.
DOI Google Scholar
[102]

Lin, Z.; Huang, B.; Hwangbo, K.; Jiang, Q. N.; Zhang, Q.; Liu, Z. Y.; Fei, Z. Y.; Lv, H. Y.; Millis, A.; McGuire, M. et al. Magnetism and its structural coupling effects in 2D ising ferromagnetic insulator VI3. Nano Lett. 2021, 21, 9180–9186.
DOI Google Scholar
[103]

Chua, R.; Yang, J.; He, X. Y.; Yu, X. J.; Yu, W.; Bussolotti, F.; Wong, P. K. J.; Loh, K. P.; Breese, M. B. H.; Goh, K. E. J. et al. Can reconstructed se-deficient line defects in monolayer VSe2 induce magnetism. Adv. Mater. 2020, 32, 2000693.
DOI Google Scholar
[104]

Berger, L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B 1996, 54, 9353–9358.
DOI Google Scholar
[105]

Slonczewski, J. C. Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater. 1996, 159, L1–L7.
DOI Google Scholar
[106]

Kent, A. D.; Worledge, D. C. A new spin on magnetic memories. Nat. Nanotechnol. 2015, 10, 187–191.
DOI Google Scholar
[107]

Manchon, A.; Železný, J.; Miron, I. M.; Jungwirth, T.; Sinova, J.; Thiaville, A.; Garello, K.; Gambardella, P. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems. Rev. Mod. Phys. 2019, 91, 035004.
DOI Google Scholar
[108]

Ramaswamy, R.; Lee, J. M.; Cai, K. M.; Yang, H. Recent advances in spin-orbit torques: Moving towards device applications. Appl. Phys. Rev. 2018, 5, 031107.
DOI Google Scholar
[109]

Alghamdi, M.; Lohmann, M.; Li, J. X.; Jothi, P. R.; Shao, Q. M.; Aldosary, M.; Su, T.; Fokwa, B. P. T.; Shi, J. Highly efficient spin-orbit torque and switching of layered ferromagnet Fe3GeTe2. Nano Lett. 2019, 19, 4400–4405.
DOI Google Scholar
[110]

Wang, X.; Tang, J.; Xia, X. X.; He, C. L.; Zhang, J. W.; Liu, Y. Z.; Wan, C. H.; Fang, C.; Guo, C. Y.; Yang, W. L. et al. Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2. Sci. Adv. 2019, 5, eaaw8904.
DOI Google Scholar
[111]

Ostwal, V.; Shen, T. T.; Appenzeller, J. Efficient spin-orbit torque switching of the semiconducting van der Waals ferromagnet Cr2Ge2Te6. Adv. Mater. 2020, 32, 1906021.
DOI Google Scholar
[112]
Kajale, S. N.; Nguyen, T.; Chao, C. A.; Bono, D. C.; Boonkird, A.; Li, M. D.; Sarkar, D. Current-induced deterministic switching of van der Waals ferromagnet at room temperature. arXiv: 2306.14355. arXiv.org e-Print archive. https://doi.org/10.48550/arXiv.2306.14355 (accessed Jul 29, 2023).
[113]
Li, W. H.; Zhu, W. K.; Zhang, G. J.; Wu, H.; Zhu, S. G.; Li, R. Z.; Zhang, E. Z.; Zhang, X. M.; Deng, Y. C.; Zhang, J. et al. Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques. arXiv: 2304.10718. arXiv.org e-Print archive. https://doi.org/10.48550/arXiv.2304.10718 (accessed Jul 29, 2023).
DOI
[114]

Wang, Y.; Zhu, D. P.; Wu, Y.; Yang, Y. M.; Yu, J. W.; Ramaswamy, R.; Mishra, R.; Shi, S. Y.; Elyasi, M.; Teo, K. L. et al. Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques. Nat. Commun. 2017, 8, 1364.
DOI Google Scholar
[115]

Han, J. H.; Richardella, A.; Siddiqui, S. A.; Finley, J.; Samarth, N.; Liu, L. Q. Room-temperature spin-orbit torque switching induced by a topological insulator. Phys. Rev. Lett. 2017, 119, 077702.
DOI Google Scholar
[116]

Fujimura, R.; Yoshimi, R.; Mogi, M.; Tsukazaki, A.; Kawamura, M.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y. Current-induced magnetization switching at charge-transferred interface between topological insulator (Bi, Sb)2Te3 and van der Waals ferromagnet Fe3GeTe2. Appl. Phys. Lett. 2021, 119, 032402.
DOI Google Scholar
[117]

MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C. Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers. Nat. Phys. 2017, 13, 300–305.
DOI Google Scholar
[118]

Shi, S. Y.; Liang, S. H.; Zhu, Z. F.; Cai, K. M.; Pollard, S. D.; Wang, Y.; Wang, J. Y.; Wang, Q. S.; He, P.; Yu, J. W. et al. All-electric magnetization switching and dzyaloshinskii-moriya interaction in WTe2/ferromagnet heterostructures. Nat. Nanotechnol. 2019, 14, 945–949.
DOI Google Scholar
[119]

Liang, S. H.; Shi, S. Y.; Hsu, C. H.; Cai, K. M.; Wang, Y.; He, P.; Wu, Y.; Pereira, V. M.; Yang, H. Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures. Adv. Mater. 2020, 32, 2002799.
DOI Google Scholar
[120]

Stiehl, G. M.; Li, R. F.; Gupta, V.; El Baggari, I., Jiang, S. W.; Xie, H. C.; Kourkoutis, L. F.; Mak, K. F.; Shan, J.; Buhrman, R. A. et al. Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide β-MoTe2. Phys. Rev. B 2019, 100, 184402.
DOI Google Scholar
[121]

Kao, I. H.; Muzzio, R.; Zhang, H. T.; Zhu, M. L.; Gobbo, J.; Yuan, S. A.; Weber, D.; Rao, R.; Li, J. H.; Edgar, J. H. et al. Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2. Nat. Mater. 2022, 21, 1029–1034.
DOI Google Scholar
[122]

Shin, I.; Cho, W. J.; An, E. S.; Park, S.; Jeong, H. W.; Jang, S.; Baek, W. J.; Park, S. Y.; Yang, D. H.; Seo, J. H. et al. Spin-orbit torque switching in an all-van der Waals heterostructure. Adv. Mater. 2022, 34, 2101730.
DOI Google Scholar
[123]

Wang, L. Z.; Xiong, J. L.; Cheng, B.; Dai, Y. D.; Wang, F. Y.; Pan, C.; Cao, T. J.; Liu, X. W.; Wang, P. F.; Chen, M. Y. et al. Cascadable in-memory computing based on symmetric writing and readout. Sci. Adv. 2022, 8, eabq6833.
DOI Google Scholar
[124]

Ou, Y. X.; Yanez, W.; Xiao, R.; Stanley, M.; Ghosh, S.; Zheng, B. Y.; Jiang, W.; Huang, Y. S.; Pillsbury, T.; Richardella, A. et al. ZrTe2/CrTe2: An epitaxial van der Waals platform for spintronics. Nat. Commun. 2022, 13, 2972.
DOI Google Scholar
[125]

Maruyama, T.; Shiota, Y.; Nozaki, T.; Ohta, K.; Toda, N.; Mizuguchi, M.; Tulapurkar, A. A.; Shinjo, T.; Shiraishi, M.; Mizukami, S. et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotechnol. 2009, 4, 158–161.
DOI Google Scholar
[126]

Shiota, Y.; Nozaki, T.; Bonell, F.; Murakami, S.; Shinjo, T.; Suzuki, Y. Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. Nat. Mater. 2012, 11, 39–43.
DOI Google Scholar
[127]

Wang, W. G.; Li, M. G.; Hageman, S.; Chien, C. L. Electric-field-assisted switching in magnetic tunnel junctions. Nat. Mater. 2012, 11, 64–68.
DOI Google Scholar
[128]

Cheng, G. H.; Rahman, M. M.; He, Z. P.; Allcca, A. L.; Rustagi, A.; Stampe, K. A.; Zhu, Y. L.; Yan, S. H.; Tian, S. J.; Mao, Z. Q. et al. Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures. Nat. Commun. 2022, 13, 7348.
DOI Google Scholar
[129]

Zhang, X. X.; Li, L. Z.; Weber, D.; Goldberger, J.; Mak, K. F.; Shan, J. Gate-tunable spin waves in antiferromagnetic atomic bilayers. Nat. Mater. 2020, 19, 838–842.
DOI Google Scholar
[130]

Wang, Z.; Zhang, T. Y.; Ding, M.; Dong, B. J.; Li, Y. X.; Chen, M. L.; Li, X. X.; Huang, J. Q.; Wang, H. W.; Zhao, X. T. et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nat. Nanotechnol. 2018, 13, 554–559.
DOI Google Scholar
[131]

Tan, C.; Xie, W. Q.; Zheng, G. L.; Aloufi, N.; Albarakati, S.; Algarni, M.; Li, J. B.; Partridge, J.; Culcer, D.; Wang, X. L. et al. Gate-controlled magnetic phase transition in a van der Waals magnet Fe5GeTe2. Nano Lett. 2021, 21, 5599–5605.
DOI Google Scholar
[132]

Wang, C. S.; Wang, J.; Xie, W. Q.; Zhang, G. J.; Wu, H.; Zhou, J. H.; Zhu, X. D.; Ning, W.; Wang, G. P.; Tan, C. et al. Sign-tunable exchange bias effect in proton-intercalated Fe3GaTe2 nanoflakes. Phys. Rev. B 2023, 107, L140409.
DOI Google Scholar
[133]

Liang, S. C.; Xie, T.; Blumenschein, N. A.; Zhou, T.; Ersevim, T.; Song, Z. H.; Liang, J. R.; Susner, M. A.; Conner, B. S.; Gong, S. J. et al. Small-voltage multiferroic control of two-dimensional magnetic insulators. Nat. Electron. 2023, 6, 199–205.
DOI Google Scholar
[134]

Wang, Z.; Sapkota, D.; Taniguchi, T.; Watanabe, K.; Mandrus, D.; Morpurgo, A. F. Tunneling spin valves based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals heterostructures. Nano Lett. 2018, 18, 4303–4308.
DOI Google Scholar
[135]

Min, K. H.; Lee, D. H.; Choi, S. J.; Lee, I. H.; Seo, J.; Kim, D. W.; Ko, K. T.; Watanabe, K.; Taniguchi, T.; Ha, D. H. et al. Tunable spin injection and detection across a van der Waals interface. Nat. Mater. 2022, 21, 1144–1149.
DOI Google Scholar
[136]

Zhu, W. K.; Lin, H. L.; Yan, F. G.; Hu, C.; Wang, Z. A.; Zhao, L. X.; Deng, Y. C.; Kudrynskyi, Z. R.; Zhou, T.; Kovalyuk, Z. D. et al. Large tunneling magnetoresistance in van der Waals ferromagnet/semiconductor heterojunctions. Adv. Mater. 2021, 33, 2104658.
DOI Google Scholar
[137]

Li, X. L.; Lü, J. T.; Zhang, J.; You, L.; Su, Y. R.; Tsymbal, E. Y. Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes. Nano Lett. 2019, 19, 5133–5139.
DOI Google Scholar
[138]

Jin, W.; Zhang, G. J.; Wu, H.; Yang, L.; Zhang, W. F.; Chang, H. X. Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions. Nanoscale 2023, 15, 5371–5378.
DOI Google Scholar
[139]

Yin, H. F.; Zhang, P. Z.; Jin, W.; Di, B. Y.; Wu, H.; Zhang, G. J.; Zhang, W. F.; Chang, H. X. Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices. CrystEngComm 2023, 25, 1339–1346.
DOI Google Scholar
[140]

Zhu, W. K.; Xie, S. H.; Lin, H. L.; Zhang, G. J.; Wu, H.; Hu, T. G.; Wang, Z. A.; Zhang, X. M.; Xu, J. H.; Wang, Y. J. et al. Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions. Chin. Phys. Lett. 2022, 39, 128501.
DOI Google Scholar
[141]

Jin, W.; Zhang, G. J.; Wu, H.; Yang, L.; Zhang, W. F.; Chang, H. X. Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based 2D van der Waals heterojunctions. ACS Appl. Mater. Interfaces 2023, 15, 36519–36526.
DOI Google Scholar
[142]

Miao, G. X.; Müller, M.; Moodera, J. S. Magnetoresistance in double spin filter tunnel junctions with nonmagnetic electrodes and its unconventional bias dependence. Phys. Rev. Lett. 2009, 102, 076601.
DOI Google Scholar
[143]

Worledge, D. C.; Geballe, T. H. Magnetoresistive double spin filter tunnel junction. J. Appl. Phys. 2000, 88, 5277–5279.
DOI Google Scholar
[144]

Song, T. C.; Cai, X. H.; Tu, M. W. Y.; Zhang, X. O.; Huang, B.; Wilson, N. P.; Seyler, K. L.; Zhu, L.; Taniguchi, T.; Watanabe, K. et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 2018, 360, 1214–1218.
DOI Google Scholar
[145]

Song, T. C.; Tu, M. W. Y.; Carnahan, C.; Cai, X. H.; Taniguchi, T.; Watanabe, K.; McGuire, M. A.; Cobden, D. H.; Xiao, D.; Yao, W. et al. Voltage control of a van der Waals spin-filter magnetic tunnel junction. Nano Lett. 2019, 19, 915–920.
DOI Google Scholar
[146]

Wang, Z.; Gutiérrez-Lezama, I.; Ubrig, N.; Kroner, M.; Gibertini, M.; Taniguchi, T.; Watanabe, K.; Imamoǧlu, A.; Giannini, E.; Morpurgo, A. F. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat. Commun. 2018, 9, 2516.
DOI Google Scholar
[147]

Kim, H. H.; Yang, B. W.; Patel, T.; Sfigakis, F.; Li, C. H.; Tian, S. J.; Lei, H. C.; Tsen, A. W. One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure. Nano Lett. 2018, 18, 4885–4890.
DOI Google Scholar
[148]

Kim, H. H.; Yang, B. W.; Tian, S. J.; Li, C. H.; Miao, G. X.; Lei, H. C.; Tsen, A. W. Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides. Nano Lett. 2019, 19, 5739–5745.
DOI Google Scholar
[149]

Ghazaryan, D.; Greenaway, M. T.; Wang, Z.; Guarochico-Moreira, V. H.; Vera-Marun, I. J.; Yin, J.; Liao, Y.; Morozov, S. V.; Kristanovski, O.; Lichtenstein, A. I. et al. Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. Nat. Electron. 2018, 1, 344–349.
DOI Google Scholar
[150]

Jiang, S. W.; Li, L. Z.; Wang, Z. F.; Shan, J.; Mak, K. F. Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures. Nat. Electron. 2019, 2, 159–163.
DOI Google Scholar
[151]

Cai, X. H.; Song, T. C.; Wilson, N. P.; Clark, G.; He, M. H.; Zhang, X. O.; Taniguchi, T.; Watanabe, K.; Yao, W.; Xiao, D. et al. Atomically thin CrCl3: An in-plane layered antiferromagnetic insulator. Nano Lett. 2019, 19, 3993–3998.
DOI Google Scholar
[152]

Lin, H. L.; Yan, F. G.; Hu, C.; Lv, Q. S.; Zhu, W. K.; Wang, Z. A.; Wei, Z. M.; Chang, K.; Wang, K. Y. Spin-valve effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals heterostructures. ACS Appl. Mater. Interfaces 2020, 12, 43921–43926.
DOI Google Scholar
[153]

Seol, M.; Lee, M. H.; Kim, H.; Shin, K. W.; Cho, Y.; Jeon, I.; Jeong, M.; Lee, H. I.; Park, J.; Shin, H. J. High-throughput growth of wafer-scale monolayer transition metal dichalcogenide via vertical ostwald ripening. Adv. Mater. 2020, 32, 2003542.
DOI Google Scholar
[154]

Kang, K.; Xie, S. F.; Huang, L. J.; Han, Y. M.; Huang, P. Y.; Mak, K. F.; Kim, C. J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656–660.
DOI Google Scholar
[155]

Tao, J. G.; Chai, J. W.; Lu, X.; Wong, L. M.; Wong, T. I.; Pan, J. S.; Xiong, Q. H.; Chi, D. Z.; Wang, S. J. Growth of wafer-scale MoS2 monolayer by magnetron sputtering. Nanoscale 2015, 7, 2497–2503.
DOI Google Scholar
[156]

Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 2009, 9, 30–35.
DOI Google Scholar
[157]

Lee, Y.; Bae, S.; Jang, H.; Jang, S.; Zhu, S. E.; Sim, S. H.; Song, Y. I, Hong, B. H.; Ahn, J. H. Wafer-scale synthesis and transfer of graphene films. Nano Lett. 2010, 10, 490–493.
DOI Google Scholar
[158]

Bae, S.; Kim, H.; Lee, Y.; Xu, X. F.; Park, J. S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Ri Kim, H.; Song, Y. I. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 2010, 5, 574–578.
DOI Google Scholar
[159]

Shim, J.; Bae, S. H.; Kong, W.; Lee, D.; Qiao, K.; Nezich, D.; Park, Y. J.; Zhao, R. K.; Sundaram, S.; Li, X. et al. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Science 2018, 362, 665–670.
DOI Google Scholar
[160]

Liu, F.; Wu, W. J.; Bai, Y. S.; Chae, S. H.; Li, Q. Y.; Wang, J.; Hone, J.; Zhu, X. Y. Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices. Science 2020, 367, 903–906.
DOI Google Scholar
[161]

Johansen, Ø.; Risinggård, V.; Sudbø, A.; Linder, J.; Brataas, A. Current control of magnetism in two-dimensional Fe3GeTe2. Phys. Rev. Lett. 2019, 122, 217203.
DOI Google Scholar
[162]

Zhang, K. X.; Han, S.; Lee, Y.; Coak, M. J.; Kim, J.; Hwang, I.; Son, S.; Shin, J.; Lim, M.; Jo, D. et al. Gigantic current control of coercive field and magnetic memory based on nanometer-thin ferromagnetic van der Waals Fe3GeTe2. Adv. Mater. 2021, 33, 2004110.
DOI Google Scholar
[163]

Zhang, K. X.; Lee, Y.; Coak, M. J.; Kim, J.; Son, S.; Hwang, I.; Ko, D. S.; Oh, Y.; Jeon, I.; Kim, D. et al. Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2. Adv. Funct. Mater. 2021, 31, 2105992.
DOI Google Scholar
[164]

Ahmad, H.; Atulasimha, J.; Bandyopadhyay, S. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory. Sci. Rep. 2015, 5, 18264.
DOI Google Scholar
[165]

Zhao, Z. Y.; Jamali, M.; D’Souza, N.; Zhang, D. L.; Bandyopadhyay, S.; Atulasimha, J.; Wang, J. P. Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology. Appl. Phys. Lett. 2016, 109, 092403.
DOI Google Scholar
[166]

Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; Gajek, M.; Han, S. J.; He, Q.; Balke, N.; Yang, C. H.; Lee, D.; Hu, W. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nat. Mater. 2008, 7, 478–482.
DOI Google Scholar
[167]

Heron, J. T.; Bosse, J. L.; He, Q.; Gao, Y.; Trassin, M.; Ye, L.; Clarkson, J. D.; Wang, C.; Liu, J.; Salahuddin, S. et al. Deterministic switching of ferromagnetism at room temperature using an electric field. Nature 2014, 516, 370–373.
DOI Google Scholar
[168]

Zhang, T. Y.; Chen, Y. S.; Li, Y. X.; Guo, Z. C.; Wang, Z.; Han, Z.; He, W.; Zhang, J. Laser-induced magnetization dynamics in a van der Waals ferromagnetic Cr2Ge2Te6 nanoflake. Appl. Phys. Lett. 2020, 116, 223103.
DOI Google Scholar
[169]

Alahmed, L.; Nepal, B.; Macy, J.; Zheng, W. K.; Casas, B.; Sapkota, A.; Jones, N.; Mazza, A. R.; Brahlek, M.; Jin, W. C. et al. Magnetism and spin dynamics in room-temperature van der Waals magnet Fe5GeTe2. 2D Mater. 2021, 8, 45030.
DOI Google Scholar
[170]

Shen, X.; Chen, H. R.; Li, Y.; Xia, H.; Zeng, F. L.; Xu, J.; Kwon, H. Y.; Ji, Y.; Won, C.; Zhang, W. et al. Multi-domain ferromagnetic resonance in magnetic van der Waals crystals CrI3 and CrBr3. J. Magn. Magn. Mater. 2021, 528, 167772.
DOI Google Scholar
[171]

Xu, H. J.; Jia, K.; Huang, Y.; Meng, F. Q.; Zhang, Q. H.; Zhang, Y.; Cheng, C.; Lan, G. B.; Dong, J.; Wei, J. W. et al. Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping. Nat. Commun. 2023, 14, 3824.
DOI Google Scholar
Publication history
Copyright

Publication history

Received: 14 August 2023
Revised: 22 December 2023
Accepted: 22 December 2023
Published: 24 January 2024
Issue date: February 2024

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© Tsinghua University Press 2024
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