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Review Article

Two-dimensional magnetic materials for spintronic applications

Shivam N. Kajale1,§Jad Hanna1,2,§Kyuho Jang1,§Deblina Sarkar1( )
MIT Media Lab, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich, 8092, Switzerland

§ Shivam N. Kajale, Jad Hanna, and Kyuho Jang contributed equally to this work.

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Abstract

Spintronic devices are driving new paradigms of bio-inspired, energy efficient computation like neuromorphic stochastic computing and in-memory computing. They have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent memories. To meet the growing demands from such diverse applications, there is need for innovation in materials and device designs which can be scaled and adapted according to the application. Two-dimensional (2D) magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of magnetism. In this review, we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic devices. We provide an account of the various relevant material discoveries, demonstrations of current and voltage-based control of magnetism and reported device systems, while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.

Graphical Abstract

Two-dimensional van der Waals magnetic materials are promising candidates for developing the next generation of spintronic devices. Here we comprehensively review the recent advances in developing spintronic devices with van der Waals magnetic materials and discuss the challenges and opportunities ahead.

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Nano Research
Pages 743-762

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Cite this article:
Kajale SN, Hanna J, Jang K, et al. Two-dimensional magnetic materials for spintronic applications. Nano Research, 2024, 17(2): 743-762. https://doi.org/10.1007/s12274-024-6447-2
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Received: 14 August 2023
Revised: 22 December 2023
Accepted: 22 December 2023
Published: 24 January 2024
© Tsinghua University Press 2024