Metal–organic framework wafer enabled fast response radiation detection with ultra-low dark current

Semiconductive metal–organic frameworks (MOFs) have attracted great interest for the electronic applications. However, dark currents of present hybrid organic–inorganic materials are 1000–10,000 times higher than those of commercial inorganic detectors, leading to poor charge transportation. Here, we demonstrate a ZIF-8 (Zn(mim)₂, mim = 2-methylimidazolate) wafer with ultra-low dark current of 1.27 pA·mm⁻² under high electric fields of 322 V·mm⁻¹. The isostatic pressing preparation process provides ZIF-8 wafers with good transmittance. Besides, the presence of redox-active metals and small spatial separation between components promotes the charge hopping. The ZIF-8-based semiconductor detector shows promising X-ray detection sensitivity of 70.82 μC·Gy⁻¹·cm⁻² with low doses exposures, contributing to superior X-ray imaging capability with a relatively high spatial resolution of 1.2 lp·mm⁻¹. Simultaneously, good peak discrimination with the energy resolution of ~ 43.78% is disclosed when the detector is illuminated by uncollimated ²⁴¹Am@5.48 MeV α-particles. These results provide a broad prospect of MOFs for future radiation detection applications.