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Nano Research 2024, 17(4): 3087-3095 https://doi.org/10.1007/s12274-023-6175-z
Research Article | Issue | Published: 26 October 2023

Polymer: Non-fullerene acceptor heterojunction-based phototransistor for short-wave infrared photodetection

Show Author's Information Jing Li1,  Weigang Zhu1( ),  Yang Han2,  Yanhou Geng2,  Wenping Hu1( )
Key Laboratory of Organic Integrated Circuits of Ministry of Education & Key Laboratory of Molecular Optoelectronic Sciences, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin 300072, China
Key Laboratory of Organic Integrated Circuits of Ministry of Education & Key Laboratory of Molecular Optoelectronic Sciences, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
Keywords:
heterojunction, phototransistor, organic semiconductor, photodetection, non-fullerene acceptor
Topics:
Organic semiconductor materialsPhotodetectorsPhototransistors
Cite this article:
Li J, Zhu W, Han Y, et al. Polymer: Non-fullerene acceptor heterojunction-based phototransistor for short-wave infrared photodetection. Nano Research, 2024, 17(4): 3087-3095. https://doi.org/10.1007/s12274-023-6175-z
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Abstract Full text Electronic supplementary material About this article

It remains full of challenge for extending short-wave infrared (SWIR) spectral response and weak-light detection in the context of broad spectral responses for phototransistor. In this work, a novel poly(2,5-bis(4-hexyldodecyl)-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thiophene) (PDPPT3-HDO):COTIC-4F organic bulk-heterojunction is prepared as active layer for bulk heterojunction phototransistors. PDPPT3-HDO serves as a hole transport material, while COTIC-4F enhances the absorption of SWIR light to 1020 nm. As a result, smooth and connected PDPPT3-HDO film is fabricated by blade coating method and exhibits high hole mobility up to 2.34 cm2·V−1·s−1 with a current on/off ratio of 4.72 × 105 in organic thin film transistors. PDPPT3-HDO:COTIC-4F heterojunction phototransistors exhibit high responsivity of 2680 A·W−1 to 900 nm and 815 A·W−1 to 1020 nm, with fast response time (rise time ~ 20 ms and fall time ~ 100 ms). The photosensitivity of the heterojunction phototransistor improves as the mass ratio of non-fullerene acceptors increases, resulting in an approximately two orders of magnitude enhancement compared to the bare polymer phototransistor. Importantly, the phototransistor exhibits decent responsivity even under ultra-weak light power of 43 μW·cm−2 to 1020 nm. This work represents a highly effective and general strategy for fabricating efficient and sensitive SWIR light photodetectors.


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Electronic supplementary material
About this article

Polymer: Non-fullerene acceptor heterojunction-based phototransistor for short-wave infrared photodetection

Show Author's information Jing Li1, Weigang Zhu1( ), Yang Han2, Yanhou Geng2, Wenping Hu1( )
Key Laboratory of Organic Integrated Circuits of Ministry of Education & Key Laboratory of Molecular Optoelectronic Sciences, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin 300072, China
Key Laboratory of Organic Integrated Circuits of Ministry of Education & Key Laboratory of Molecular Optoelectronic Sciences, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China

Abstract

It remains full of challenge for extending short-wave infrared (SWIR) spectral response and weak-light detection in the context of broad spectral responses for phototransistor. In this work, a novel poly(2,5-bis(4-hexyldodecyl)-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thiophene) (PDPPT3-HDO):COTIC-4F organic bulk-heterojunction is prepared as active layer for bulk heterojunction phototransistors. PDPPT3-HDO serves as a hole transport material, while COTIC-4F enhances the absorption of SWIR light to 1020 nm. As a result, smooth and connected PDPPT3-HDO film is fabricated by blade coating method and exhibits high hole mobility up to 2.34 cm2·V−1·s−1 with a current on/off ratio of 4.72 × 105 in organic thin film transistors. PDPPT3-HDO:COTIC-4F heterojunction phototransistors exhibit high responsivity of 2680 A·W−1 to 900 nm and 815 A·W−1 to 1020 nm, with fast response time (rise time ~ 20 ms and fall time ~ 100 ms). The photosensitivity of the heterojunction phototransistor improves as the mass ratio of non-fullerene acceptors increases, resulting in an approximately two orders of magnitude enhancement compared to the bare polymer phototransistor. Importantly, the phototransistor exhibits decent responsivity even under ultra-weak light power of 43 μW·cm−2 to 1020 nm. This work represents a highly effective and general strategy for fabricating efficient and sensitive SWIR light photodetectors.

Keywords: heterojunction, phototransistor, organic semiconductor, photodetection, non-fullerene acceptor

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Publication history
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Acknowledgements

Publication history

Received: 17 August 2023
Revised: 07 September 2023
Accepted: 07 September 2023
Published: 26 October 2023
Issue date: April 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was financially supported by the Ministry of Science and Technology of China (Nos. 2017YFA0204503 and 2018YFA0703200), the National Natural Science Foundation of China (Nos. 52121002, 51733004, 51725304, 21875158, and U21A6002), Tianjin Natural Science Foundation (No. 20JCJQJC00300) and the Discretionary Fund of Tianjin University (No. 2104).

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