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Nano Research 2023, 16(11): 12516-12530 https://doi.org/10.1007/s12274-023-6173-1
Review Article | Issue | Published: 13 October 2023

Pave the way to the batch production of SWNT arrays for carbon-based electronic devices

Show Author's Information Ying Xie1,§,  Yue Li2,§,  Ziqiang Zhao2,  Jin Zhang1( )
College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China

§ Ying Xie and Yue Li contributed equally to this work.

Keywords:
high-throughput characterization, horizontally aligned carbon nanotubes, batch production, electronic application
Topics:
Carbon
Cite this article:
Xie Y, Li Y, Zhao Z, et al. Pave the way to the batch production of SWNT arrays for carbon-based electronic devices. Nano Research, 2023, 16(11): 12516-12530. https://doi.org/10.1007/s12274-023-6173-1
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Abstract Full text About this article

Single-walled carbon nanotubes (SWNTs) have been regarded as one of the most promising candidates to supplement or even replace silicon in the post-Moore era. The requirement is to prepare the horizontally aligned SWNTs arrays (HASAs) with multiple indicators, including high density, high semiconducting purity, and wafer-scale uniformity. However, after all the fevered works being done in controlled synthesis, we still have a long way to go before realizing the application of SWNTs in highly performed electronic devices. The methods of batch production and high-throughput characterization techniques of the HASAs are the two main challenges. In this outlook, we first summarized the progresses in synthesis of HASAs with either high density or high semiconducting purity. Then the methods adopted in characterizing SWNTs and HASAs were discussed according to the different principles of characterization techniques. Afterwards, the development of carbon nanotube based electronic devices, specifically, the field effect transistors (FETs), was reviewed from three perspectives. The problems involved in electronic applications bring forward the higher request to the HASAs itself. Therefore, in the end of this outlook, we prospected the future of the synthesis and corresponding characterization of HASAs, and tried to provide our ideas about how to pave the way to the batch production of HASAs for carbon based electronic devices.


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About this article

Pave the way to the batch production of SWNT arrays for carbon-based electronic devices

Show Author's information Ying Xie1,§, Yue Li2,§, Ziqiang Zhao2, Jin Zhang1( )
College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, China
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China

§ Ying Xie and Yue Li contributed equally to this work.

Abstract

Single-walled carbon nanotubes (SWNTs) have been regarded as one of the most promising candidates to supplement or even replace silicon in the post-Moore era. The requirement is to prepare the horizontally aligned SWNTs arrays (HASAs) with multiple indicators, including high density, high semiconducting purity, and wafer-scale uniformity. However, after all the fevered works being done in controlled synthesis, we still have a long way to go before realizing the application of SWNTs in highly performed electronic devices. The methods of batch production and high-throughput characterization techniques of the HASAs are the two main challenges. In this outlook, we first summarized the progresses in synthesis of HASAs with either high density or high semiconducting purity. Then the methods adopted in characterizing SWNTs and HASAs were discussed according to the different principles of characterization techniques. Afterwards, the development of carbon nanotube based electronic devices, specifically, the field effect transistors (FETs), was reviewed from three perspectives. The problems involved in electronic applications bring forward the higher request to the HASAs itself. Therefore, in the end of this outlook, we prospected the future of the synthesis and corresponding characterization of HASAs, and tried to provide our ideas about how to pave the way to the batch production of HASAs for carbon based electronic devices.

Keywords: high-throughput characterization, horizontally aligned carbon nanotubes, batch production, electronic application

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Publication history
Copyright
Acknowledgements

Publication history

Received: 15 June 2023
Revised: 07 September 2023
Accepted: 07 September 2023
Published: 13 October 2023
Issue date: November 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was financially supported by the Ministry of Science and Technology of China (Nos. 2022YFA1203302, 2022YFA1203304, and 2018YFA0703502), the National Natural Science Foundation of China (No. 52021006), the Strategic Priority Research Program of CAS (No. XDB36030100), and the Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXTD-202001).

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