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Nano Research 2024, 17(4): 3224-3231 https://doi.org/10.1007/s12274-023-6171-3
Research Article | Issue | Published: 02 October 2023

Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

Show Author's Information Jidong Huang1,2,  Jingren Chen1,2,  Junhua Meng3,  Siyu Zhang1,2,  Ji Jiang1,2,  Jingzhen Li1,2,  Libin Zeng1,2,  Zhigang Yin1,2,  Jinliang Wu1,  Xingwang Zhang1,2( )
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Faculty of Science, Beijing University of Technology, Beijing 100124, China
Keywords:
chemical vapor deposition, transition metal dichalcogenides, hexagonal boron nitride, photodetectors, remote epitaxy
Topics:
Epitaxial growthLayered semiconductors
Cite this article:
Huang J, Chen J, Meng J, et al. Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride. Nano Research, 2024, 17(4): 3224-3231. https://doi.org/10.1007/s12274-023-6171-3
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Abstract Full text Electronic supplementary material About this article

As a very promising epitaxy technology, the remote epitaxy has attracted extensive attention in recent years, in which graphene is the most used interlayer material. As an isomorphic of graphene, two-dimensional (2D) hexagonal boron nitride (h-BN), is another promising interlayer for the remote epitaxy. However, there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy. Herein, we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN, and hence the remote epitaxy of ZrS2 layers can be realized on sapphire substrates through monolayer h-BN. The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals (vdWs) epitaxy. Due to the weak interfacial scattering and high crystalline quality of ZrS2 epilayer, the ZrS2 photodetector with monolayer h-BN shows the best performance, with an on/off ratio of more than 2 × 105 and a responsivity up to 379 mA·W−1. This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN, which have great potential in developing large-area 2D electronic devices.


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Abstract
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Electronic supplementary material
About this article

Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

Show Author's information Jidong Huang1,2, Jingren Chen1,2, Junhua Meng3, Siyu Zhang1,2, Ji Jiang1,2, Jingzhen Li1,2, Libin Zeng1,2, Zhigang Yin1,2, Jinliang Wu1, Xingwang Zhang1,2( )
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Faculty of Science, Beijing University of Technology, Beijing 100124, China

Abstract

As a very promising epitaxy technology, the remote epitaxy has attracted extensive attention in recent years, in which graphene is the most used interlayer material. As an isomorphic of graphene, two-dimensional (2D) hexagonal boron nitride (h-BN), is another promising interlayer for the remote epitaxy. However, there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy. Herein, we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN, and hence the remote epitaxy of ZrS2 layers can be realized on sapphire substrates through monolayer h-BN. The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals (vdWs) epitaxy. Due to the weak interfacial scattering and high crystalline quality of ZrS2 epilayer, the ZrS2 photodetector with monolayer h-BN shows the best performance, with an on/off ratio of more than 2 × 105 and a responsivity up to 379 mA·W−1. This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN, which have great potential in developing large-area 2D electronic devices.

Keywords: chemical vapor deposition, transition metal dichalcogenides, hexagonal boron nitride, photodetectors, remote epitaxy

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Publication history
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Acknowledgements

Publication history

Received: 06 August 2023
Revised: 29 August 2023
Accepted: 07 September 2023
Published: 02 October 2023
Issue date: April 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62274151 and 61874106), the Natural Science Foundation of Beijing Municipality (No. 4212045), and the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB43000000).

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