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Nano Research 2023, 16(11): 12720-12726 https://doi.org/10.1007/s12274-023-6138-4
Research Article | Issue | Published: 14 October 2023

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Show Author's Information Xue Zhao1,  Ningfei Gao2,  Zeyao Zhang1,3,4,  Qidong Liu1,  Jian Sheng1,  Yijie Hu1,  Ruoming Li1,  Haitao Xu2,3,4,  Lianmao Peng3,  Yan Li1,3,5( )
Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Beijing HuaTanYuanXin Electronics Technology Ltd. Co., Beijing 101399, China
Institute of Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
Institute of Advanced Functional Materials and Devices, Shanxi University, Taiyuan 030031, China
PKU-HKUST ShenZhen-HongKong Institution, Shenzhen 518057, China
Keywords:
carbon monoxide, single-walled carbon nanotubes, bimetallic catalysts, semiconducting, arrays
Topics:
Carbon nanotubes
Cite this article:
Zhao X, Gao N, Zhang Z, et al. Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide. Nano Research, 2023, 16(11): 12720-12726. https://doi.org/10.1007/s12274-023-6138-4
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Abstract Full text Electronic supplementary material About this article

The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO2, which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.


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Electronic supplementary material
About this article

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Show Author's information Xue Zhao1, Ningfei Gao2, Zeyao Zhang1,3,4, Qidong Liu1, Jian Sheng1, Yijie Hu1, Ruoming Li1, Haitao Xu2,3,4, Lianmao Peng3, Yan Li1,3,5( )
Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Beijing HuaTanYuanXin Electronics Technology Ltd. Co., Beijing 101399, China
Institute of Carbon-Based Thin Film Electronics, Peking University, Shanxi, Taiyuan 030012, China
Institute of Advanced Functional Materials and Devices, Shanxi University, Taiyuan 030031, China
PKU-HKUST ShenZhen-HongKong Institution, Shenzhen 518057, China

Abstract

The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO2, which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

Keywords: carbon monoxide, single-walled carbon nanotubes, bimetallic catalysts, semiconducting, arrays

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Publication history
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Acknowledgements

Publication history

Received: 01 July 2023
Revised: 27 August 2023
Accepted: 28 August 2023
Published: 14 October 2023
Issue date: November 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was supported by National Natural Science Foundation of China (Nos. 22120102004 and U21A6004), the National R&D Program of China (No. 2022YFA1203300), Shenzhen KQTD Project (No. KQTD20180411143400981), Science and Technology Major Project of Shanxi (No. 202101030201022), and Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXTD-202001).

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