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Nano Research 2023, 16(11): 12713-12719 https://doi.org/10.1007/s12274-023-6128-6
Research Article | Issue | Published: 12 October 2023

Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing

Show Author's Information Yue Wang1,  Haoran Sun1,  Zhe Sheng1,  Jianguo Dong1,  Wennan Hu1,  Dongsheng Tang2,  Zengxing Zhang1,3( )
School of Microelectronics, Fudan University, Shanghai 200433, China
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
National Integrated Circuit Innovation Center, No. 825 Zhangheng Road, Shanghai 201203, China
Keywords:
ambipolar transistor, van der Waals contact, reconfigurable photodiode, in-senor computing
Topics:
Electron devicesField effect transistorsLayered semiconductorsPhotodiodesPhotoelectric devicesSemiconductor devices
Cite this article:
Wang Y, Sun H, Sheng Z, et al. Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing. Nano Research, 2023, 16(11): 12713-12719. https://doi.org/10.1007/s12274-023-6128-6
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Abstract Full text Electronic supplementary material About this article

Image sensors with an in-sensor computing architecture have shown great potential in meeting the energy-efficient requirements of emergent data-intensive applications, where images are processed within the photodiode arrays. It demands the composed photodiodes are reconfigurable, which are usually achieved by ambipolar two-dimensional (2D) semiconductors. To improve the ambipolar charges injection, here we report a top-gated field-effect transistor (FET) design that is of bottom van der Waals contact via transferring ambipolar 2D WSe2 onto Pd/Cr source/drain electrodes. The devices exhibit nearly negligible effective barrier heights for both holes and electrons based on thermionic emission mode, and show an almost balanced on/off ratio in the p-branch and n-branch. By replacing the top gate with two aligned semi-gates, the devices can effectively function as reconfigurable photodiodes. They can be switched between PIN and NIP configurations via controlling the two semi-gates, exhibiting good linearity in terms of short-circuit current (ISC) and incident light power density. The photodiode arrays are also demonstrated for in-sensor optoelectronic convolutional image processing, showing significant potential for in-sensor computing image processors.


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About this article

Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing

Show Author's information Yue Wang1, Haoran Sun1, Zhe Sheng1, Jianguo Dong1, Wennan Hu1, Dongsheng Tang2, Zengxing Zhang1,3( )
School of Microelectronics, Fudan University, Shanghai 200433, China
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
National Integrated Circuit Innovation Center, No. 825 Zhangheng Road, Shanghai 201203, China

Abstract

Image sensors with an in-sensor computing architecture have shown great potential in meeting the energy-efficient requirements of emergent data-intensive applications, where images are processed within the photodiode arrays. It demands the composed photodiodes are reconfigurable, which are usually achieved by ambipolar two-dimensional (2D) semiconductors. To improve the ambipolar charges injection, here we report a top-gated field-effect transistor (FET) design that is of bottom van der Waals contact via transferring ambipolar 2D WSe2 onto Pd/Cr source/drain electrodes. The devices exhibit nearly negligible effective barrier heights for both holes and electrons based on thermionic emission mode, and show an almost balanced on/off ratio in the p-branch and n-branch. By replacing the top gate with two aligned semi-gates, the devices can effectively function as reconfigurable photodiodes. They can be switched between PIN and NIP configurations via controlling the two semi-gates, exhibiting good linearity in terms of short-circuit current (ISC) and incident light power density. The photodiode arrays are also demonstrated for in-sensor optoelectronic convolutional image processing, showing significant potential for in-sensor computing image processors.

Keywords: ambipolar transistor, van der Waals contact, reconfigurable photodiode, in-senor computing

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Publication history
Copyright
Acknowledgements

Publication history

Received: 30 June 2023
Revised: 15 August 2023
Accepted: 25 August 2023
Published: 12 October 2023
Issue date: November 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

Z. X. Z. and D. S. T. express the highest respect in memory of their mentor Prof. Sishen Xie. The work was supported by the National Natural Science Foundation of China (No. 62274037), the National Key Research and Development Program of China (No. 2018YFA0703703), the Ministry of Science and Technology of China (No. 2018YFE0118300), and State Key Laboratory of ASIC & System (No. 2021MS003).

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