Epitaxial growth of borophene on graphene surface towards efficient and broadband photodetector
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In-situ integration of multiple materials with well-defined interfaces as heterostructures is of great interest due to their unique properties and potential for new device functionality. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for two-dimensional heterostructures, but suitable synthesis conditions have limited its potential applications. Toward this end, we demonstrate the vertical borophene and graphene heterostructures which form by epitaxial growth of borophene onto multilayer graphene on Cu substrates via chemical vapor deposition, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene well coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent broadband photoresponse from the ultraviolet (255 nm) to the infrared (940 nm) wavelengths, with enhanced responsivity compared to pristine borophene or graphene photodetectors. This work informs emerging efforts to integrate borophene into nanoelectronic applications for both fundamental investigations and technological applications.
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Epitaxial growth of borophene on graphene surface towards efficient and broadband photodetector
)
Abstract
In-situ integration of multiple materials with well-defined interfaces as heterostructures is of great interest due to their unique properties and potential for new device functionality. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for two-dimensional heterostructures, but suitable synthesis conditions have limited its potential applications. Toward this end, we demonstrate the vertical borophene and graphene heterostructures which form by epitaxial growth of borophene onto multilayer graphene on Cu substrates via chemical vapor deposition, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene well coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent broadband photoresponse from the ultraviolet (255 nm) to the infrared (940 nm) wavelengths, with enhanced responsivity compared to pristine borophene or graphene photodetectors. This work informs emerging efforts to integrate borophene into nanoelectronic applications for both fundamental investigations and technological applications.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (No. 61774085), the Natural Science Foundation of Jiangsu Province (No. BK20201300), the Fundamental Research Funds for the Central Universities (No. NP2022401), the Fund of Prospective Layout of Scientific Research for NUAA (Nanjing University of Aeronautics and Astronautics) (No. ILA22009), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.
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