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Nano Research 2024, 17(4): 2628-2637 https://doi.org/10.1007/s12274-023-6048-5
Research Article | Issue | Published: 25 September 2023

Leflunomide: A versatile additive for defect reduction, enhanced optoelectronic properties and environmental stability of perovskite films

Show Author's Information Dingyue Sun1,  Ming Peng1,  Taijin Wang1,  Longju Yi2,  Shizuo Zhang1,  Feng Liu1,2( ),  Gary J. Cheng1,3( )
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
School of Industrial Engineering, Purdue University, West Lafayette, IN 47906, USA
Keywords:
additive engineering, leflunomide, defect passivation perovskite
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EnergySemiconductors
Cite this article:
Sun D, Peng M, Wang T, et al. Leflunomide: A versatile additive for defect reduction, enhanced optoelectronic properties and environmental stability of perovskite films. Nano Research, 2024, 17(4): 2628-2637. https://doi.org/10.1007/s12274-023-6048-5
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Abstract Full text Electronic supplementary material About this article

The development of perovskite photoelectric devices with excellent performance is largely dependent on the defects in the perovskite films. To address this issue, a specific drug, leflunomide (LF, C12H9F3N2O2), was incorporated into the perovskite to reduce defects and improve its photoelectric properties. It is believed that the C=O bond on LF molecule can interact with the uncoordinated Pb2+ of the perovskite, thereby reducing non-radiative recombination. This novel approach of incorporating LF into perovskite films has the potential to revolutionize the development of high-performance perovskite photoelectric devices. The trifluoromethyl functional (–CF3) group on LF can form a protective layer on the surface of the perovskite film, shielding it from water erosion. Moreover, LF can be utilized to alter the nucleation position of perovskite, thus minimizing the number of defects and optimizing the film quality. Consequently, the LF-doped perovskite film displays low trap density and high photoelectric performance. The LF-doped perovskite film showed a trap density of 8.28 × 1011, which is notably lower than the 2.04 × 1012 of the perovskite film without LF. The responsivity and detectivity of the LF-doped perovskite photodetector were 0.771 A/W and 2.81 × 1011 Jones, respectively, which are much higher than the 0.23 A/W and 1.06 × 1010 Jones of the LF-undoped perovskite photodetector. Meanwhile, the LF-doped photodetector maintained an initial photocurrent of 86% after 30 days of storage in air, indicating drastically increased environmental stability. This strongly suggests that LF is an effective additive for perovskites utilized in optoelectronic devices with high performance.


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Abstract
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Electronic supplementary material
About this article

Leflunomide: A versatile additive for defect reduction, enhanced optoelectronic properties and environmental stability of perovskite films

Show Author's information Dingyue Sun1, Ming Peng1, Taijin Wang1, Longju Yi2, Shizuo Zhang1, Feng Liu1,2( ), Gary J. Cheng1,3( )
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
School of Industrial Engineering, Purdue University, West Lafayette, IN 47906, USA

Abstract

The development of perovskite photoelectric devices with excellent performance is largely dependent on the defects in the perovskite films. To address this issue, a specific drug, leflunomide (LF, C12H9F3N2O2), was incorporated into the perovskite to reduce defects and improve its photoelectric properties. It is believed that the C=O bond on LF molecule can interact with the uncoordinated Pb2+ of the perovskite, thereby reducing non-radiative recombination. This novel approach of incorporating LF into perovskite films has the potential to revolutionize the development of high-performance perovskite photoelectric devices. The trifluoromethyl functional (–CF3) group on LF can form a protective layer on the surface of the perovskite film, shielding it from water erosion. Moreover, LF can be utilized to alter the nucleation position of perovskite, thus minimizing the number of defects and optimizing the film quality. Consequently, the LF-doped perovskite film displays low trap density and high photoelectric performance. The LF-doped perovskite film showed a trap density of 8.28 × 1011, which is notably lower than the 2.04 × 1012 of the perovskite film without LF. The responsivity and detectivity of the LF-doped perovskite photodetector were 0.771 A/W and 2.81 × 1011 Jones, respectively, which are much higher than the 0.23 A/W and 1.06 × 1010 Jones of the LF-undoped perovskite photodetector. Meanwhile, the LF-doped photodetector maintained an initial photocurrent of 86% after 30 days of storage in air, indicating drastically increased environmental stability. This strongly suggests that LF is an effective additive for perovskites utilized in optoelectronic devices with high performance.

Keywords: additive engineering, leflunomide, defect passivation perovskite

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Publication history
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Acknowledgements

Publication history

Received: 19 June 2023
Revised: 23 July 2023
Accepted: 27 July 2023
Published: 25 September 2023
Issue date: April 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

We thank the Core Facility of Wuhan University for materials characterization support.

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