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Electrochemical production of hydrogen peroxide (H2O2) via the two-electron (2e) pathway of oxygen reduction reaction (ORR) supplies an auspicious alternative to the current industrial anthraquinone process. Nonetheless, it still lacks efficient electrocatalysts to achieve high ORR activity together with 2e selectivity simultaneously. Herein, a boron-doped defective nanocarbon (B-DC) electrocatalyst is synthesized by using fullerene frameworks as the precursor and boric oxide as the boron source. The obtained B-DC materials have a hierarchical porous structure, befitting boron dopants, and abundant topological pentagon defects, exhibiting a high ORR onset potential of 0.78 V and a dominated 2e selectivity (over 95%). Remarkably, when B-DC electrocatalyst is employed in a real device, it achieves a high H2O2 yield rate (247 mg·L−1·h−1), quantitative Faraday efficiency (~ 100%), and ultrafast organic pollutant degradation rate. The theoretical calculation reveals that the synergistic effect of topological pentagon defects and the incorporation of boron dopants promote the activation of the O2 molecule and facilitates the desorption of oxygen intermediate. This finding will be very helpful for the comprehension of the synergistic effect of topological defects and heteroatom dopants for boosting the electrocatalytic performance of nanocarbon toward H2O2 production.

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Publication history
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Acknowledgements

Publication history

Received: 18 May 2023
Revised: 27 June 2023
Accepted: 13 July 2023
Published: 25 September 2023
Issue date: March 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 22001084, 21925104, and 92261204), and Princess Nourah bint Abdulrahman University Researchers Supporting Project number (PNURSP2023R398), Princess Nourah bint Abdulrahman University, Riyadh, Saudi Arabia. We thank the Analytical and Testing Center at the Hefei University of Technology and Huazhong University of Science and Technology for all related measurements.

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