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Nano Research 2024, 17(3): 2111-2128 https://doi.org/10.1007/s12274-023-5995-1
Review Article | Issue | Published: 24 August 2023

SnIP-type atomic-scale inorganic double-helix semiconductors: Synthesis, properties, and applications

Show Author's Information Mudussar Ali,  Bowen Zhang,  Muhammad Khurram,  Qingfeng Yan( )
Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, China
Keywords:
photocatalysis, inorganic semiconductor, inorganic double helix, SnIP-based hybrids, flexible material, tin phosphide iodide (SnIP)
Topics:
Semiconducting antimony compounds
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Ali M, Zhang B, Khurram M, et al. SnIP-type atomic-scale inorganic double-helix semiconductors: Synthesis, properties, and applications. Nano Research, 2024, 17(3): 2111-2128. https://doi.org/10.1007/s12274-023-5995-1
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Abstract Full text About this article

Flexible inorganic double helical semiconductors similar to DNA have fueled the demand for efficient materials with innovative structures and excellent properties. The recent discovery of tin phosphide iodide (SnIP), the first carbon-free double helical semiconductor at an atomic level, has opened new avenues of research for semiconducting devices such as thermoelectric and sensor devices, solar cells, and photocatalysis. It has drawn significant academic attention due to its high structural flexibility, band gap in the visible spectrum range, and non-toxic elements. Herein, the recent progress in developing SnIP, including its prestigious structure, versatile and intriguing properties, and synthesis, is summarized. Other analogues of SnIP and SnIP-based hybrid materials and their applications in photocatalysis are also discussed. Finally, the review concludes with a critical summary and future aspects of this new inorganic semiconductor.


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About this article

SnIP-type atomic-scale inorganic double-helix semiconductors: Synthesis, properties, and applications

Show Author's information Mudussar Ali, Bowen Zhang, Muhammad Khurram, Qingfeng Yan( )
Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, China

Abstract

Flexible inorganic double helical semiconductors similar to DNA have fueled the demand for efficient materials with innovative structures and excellent properties. The recent discovery of tin phosphide iodide (SnIP), the first carbon-free double helical semiconductor at an atomic level, has opened new avenues of research for semiconducting devices such as thermoelectric and sensor devices, solar cells, and photocatalysis. It has drawn significant academic attention due to its high structural flexibility, band gap in the visible spectrum range, and non-toxic elements. Herein, the recent progress in developing SnIP, including its prestigious structure, versatile and intriguing properties, and synthesis, is summarized. Other analogues of SnIP and SnIP-based hybrid materials and their applications in photocatalysis are also discussed. Finally, the review concludes with a critical summary and future aspects of this new inorganic semiconductor.

Keywords: photocatalysis, inorganic semiconductor, inorganic double helix, SnIP-based hybrids, flexible material, tin phosphide iodide (SnIP)

References(137)

[1]

Watson, J. D.; Crick, F. H. C. Molecular structure of nucleic acids: A structure for deoxyribose nucleic acid. Nature 1953, 171, 737–738.
DOI Google Scholar
[2]

Franklin, R. E.; Gosling, R. G. Molecular configuration in sodium thymonucleate. Nature 1953, 171, 740–741.
DOI Google Scholar
[3]

Wilkins, M. H. F.; Stokes, A. R.; Wilson, H. R. Molecular structure of nucleic acids: Molecular structure of deoxypentose nucleic acids. Nature 1953, 171, 738–740.
DOI Google Scholar
[4]

Nielsen, P. E. Peptide nucleic acid: A versatile tool in genetic diagnostics and molecular biology. Curr. Opin. Biotechnol. 2001, 12, 16–20.
DOI Google Scholar
[5]

Malyshev, D. A.; Dhami, K.; Lavergne, T.; Chen, T. J.; Dai, N.; Foster, J. M.; Corrêa, I. R.; Romesberg, F. E. A semi-synthetic organism with an expanded genetic alphabet. Nature 2014, 509, 385–388.
DOI Google Scholar
[6]

Zhao, M. Q.; Zhang, Q.; Tian, G. L.; Wei, F. Emerging double helical nanostructures. Nanoscale 2014, 6, 9339–9354.
DOI Google Scholar
[7]

Robbie, K.; Brett, M. J. Sculptured thin films and glancing angle deposition: Growth mechanics and applications. J. Vac. Sci. Technol. A 1997, 15, 1460–1465.
DOI Google Scholar
[8]

Hanus, M. J.; Harris, A. T. Synthesis, characterisation and applications of coiled carbon nanotubes. J. Nanosci. Nanotechnol. 2010, 10, 2261–2283.
DOI Google Scholar
[9]

Yang, S.; Zhao, L. Z.; Yu, C. Z.; Zhou, X. F.; Tang, J. W.; Yuan, P.; Chen, D. Y.; Zhao, D. Y. On the origin of helical mesostructures. J. Am. Chem. Soc. 2006, 128, 10460–10466.
DOI Google Scholar
[10]

Jin, S.; Bierman, M. J.; Morin, S. A. A new twist on nanowire formation: Screw-dislocation-driven growth of nanowires and nanotubes. J. Phys. Chem. Lett. 2010, 1, 1472–1480.
DOI Google Scholar
[11]

Wang, Y.; Wang, Q. X.; Sun, H.; Zhang, W. Q.; Chen, G.; Wang, Y. W.; Shen, X. S.; Han, Y.; Lu, X. M.; Chen, H. Y. Chiral transformation: From single nanowire to double helix. J. Am. Chem. Soc. 2011, 133, 20060–20063.
DOI Google Scholar
[12]

Lee, C. C.; Grenier, C.; Meijer, E. W.; Schenning, A. P. H. J. Preparation and characterization of helical self-assembled nanofibers. Chem. Soc. Rev. 2009, 38, 671–683.
DOI Google Scholar
[13]

Hönle, W.; von Schnering, Η. G. Zur struktur von LiP und KSb. Z. Kristallogr. Cryst. Mater. 1981, 155, 307–314.
DOI Google Scholar
[14]

Ivanov, A. S.; Morris, A. J.; Bozhenko, K. V.; Pickard, C. J.; Boldyrev, A. I. Inorganic double-helix structures of unusually simple lithium-phosphorus species. Angew. Chem., Int. Ed. 2012, 51, 8330–8333.
DOI Google Scholar
[15]

Jissy, A. K.; Datta, A. What stabilizes the LinPn inorganic double helices? J. Phys. Chem. Lett. 2013, 4, 1018–1022.
DOI Google Scholar
[16]

Fan, X.; Dickey, E. C.; Eklund, P. C.; Williams, K. A.; Grigorian, L.; Buczko, R.; Pantelides, S. T.; Pennycook, S. J. Atomic arrangement of iodine atoms inside single-walled carbon nanotubes. Phys. Rev. Lett. 2000, 84, 4621–4624.
DOI Google Scholar
[17]

Fujimori, T.; Morelos-Gómez, A.; Zhu, Z.; Muramatsu, H.; Futamura, R.; Urita, K.; Terrones, M.; Hayashi, T.; Endo, M.; Young Hong, S. et al. Conducting linear chains of sulphur inside carbon nanotubes. Nat. Commun. 2013, 4, 2162.
DOI Google Scholar
[18]

Fujimori, T.; dos Santos, R. B.; Hayashi, T.; Endo, M.; Kaneko, K.; Tománek, D. Formation and properties of selenium double-helices inside double-wall carbon nanotubes: Experiment and theory. ACS Nano 2013, 7, 5607–5613.
DOI Google Scholar
[19]

Ivanov, A. S.; Kar, T.; Boldyrev, A. I. Nanoscale stabilization of zintl compounds: 1D ionic Li-P double helix confined inside a carbon nanotube. Nanoscale 2016, 8, 3454–3460.
DOI Google Scholar
[20]

Soghomonian, V.; Chen, Q.; Haushalter, R. C.; Zubieta, J.; O’Connor, C. J. An inorganic double helix: Hydrothermal synthesis, structure, and magnetism of chiral[(CH3)2NH2]K4[V10O10(H2O)2(OH)4(PO4)7]·4H2O. Science 1993, 259, 1596–1599.
DOI Google Scholar
[21]

Liu, L. C.; Zhang, L. Q.; Kim, S. M.; Park, S. Helical metallic micro-and nanostructures: Fabrication and application. Nanoscale 2014, 6, 9355–9365.
DOI Google Scholar
[22]

Tang, Z. Y.; Zhang, Z. L.; Wang, Y.; Glotzer, S. C.; Kotov, N. A. Self-assembly of CdTe nanocrystals into free-floating sheets. Science 2006, 314, 274–278.
DOI Google Scholar
[23]

Sone, E. D.; Zubarev, E. R.; Stupp, S. I. Supramolecular templating of single and double nanohelices of cadmium sulfide. Small 2005, 1, 694–697.
DOI Google Scholar
[24]

Goldberger, J.; He, R. R.; Zhang, Y. F.; Lee, S.; Yan, H. Q.; Choi, H. J.; Yang, P. D. Single-crystal gallium nitride nanotubes. Nature 2003, 422, 599–602.
DOI Google Scholar
[25]

Morito, H.; Yamane, H. Double-helical silicon microtubes. Angew. Chem. 2010, 122, 3720–3723.
DOI Google Scholar
[26]

Lange, S.; Schmidt, P.; Nilges, T. Au3SnP7@black phosphorus: An easy access to black phosphorus. Inorg. Chem. 2007, 46, 4028–4035.
DOI Google Scholar
[27]

Köpf, M.; Eckstein, N.; Pfister, D.; Grotz, C.; Krüger, I.; Greiwe, M.; Hansen, T.; Kohlmann, H.; Nilges, T. Access and in situ growth of phosphorene-precursor black phosphorus. J. Cryst. Growth 2014, 405, 6–10.
DOI Google Scholar
[28]

Pfister, D.; Schäfer, K.; Ott, C.; Gerke, B.; Pöttgen, R.; Janka, O.; Baumgartner, M.; Efimova, A.; Hohmann, A.; Schmidt, P. et al. Inorganic double helices in semiconducting SnIP. Adv. Mater. 2016, 28, 9783–9791.
DOI Google Scholar
[29]

Saleh, L. M. A.; Dziedzic, R.; Spokoyny, A. M. An inorganic twist in nanomaterials: Making an atomically precise double helix. ACS Cent. Sci. 2016, 2, 685–686.
DOI Google Scholar
[30]

Baumgartner, M.; Weihrich, R.; Nilges, T. Inorganic SnIP-type double helices in main-group chemistry. Chem.—Eur. J. 2017, 23, 6452–6457.
DOI Google Scholar
[31]

Li, X. R.; Dai, Y.; Ma, Y. D.; Li, M. M.; Yu, L.; Huang, B. B. Landscape of DNA-like inorganic metal free double helical semiconductors and potential applications in photocatalytic water splitting. J. Mater. Chem. A 2017, 5, 8484–8492.
DOI Google Scholar
[32]

Baumer, F.; Reiter, F.; Nilges, T. Towards MXPn-type compounds in the systems Ge-I-Pn (Pn = P, As)—new insights in the structures and properties of inverse type I clathrates. Z. Anorg. Allg. Chem. 2017, 643, 1444–1450.
DOI Google Scholar
[33]

Reiter, F.; Pielmeier, M.; Vogel, A.; Jandl, C.; Plodinec, M.; Rohner, C.; Lunkenbein, T.; Nisi, K.; Holleitner, A.; Nilges, T. SnBrP-A SnIP-type representative in the Sn-Br-P system. Z. Anorg. Allg. Chem. 2022, 648, e202100347.
DOI Google Scholar
[34]
Müller, U. Symmetry Relationships Between Crystal Structures: Applications of Crystallographic Group Theory in Crystal Chemistry; Oxford University Press: Oxford, 2013.
DOI
[35]
Aroyo, M. I. International Tables for Crystallography; Wiley Online Library, 2013.
[36]

Wu, J. B.; Wang, N.; Xie, Y. R.; Liu, H. F.; Huang, X. H.; Cong, X.; Chen, H. Y.; Ma, J. H.; Liu, F. X.; Zhao, H. B. et al. Polymer-like inorganic double helical van der Waals semiconductor. Nano Lett. 2022, 22, 9054–9061.
DOI Google Scholar
[37]

Osters, O.; Nilges, T.; Bachhuber, F.; Pielnhofer, F.; Weihrich, R.; Schöneich, M.; Schmidt, P. Synthesis and identification of metastable compounds: Black arsenic—science or fiction? Angew. Chem., Int. Ed. 2012, 51, 2994–2997.
DOI Google Scholar
[38]

Doll, K.; Dovesi, R.; Orlando, R. Analytical Hartree-Fock gradients with respect to the cell parameter for systems periodic in three dimensions. Theor. Chem. Acc. 2004, 112, 394–402.
DOI Google Scholar
[39]

Sun, Y.; Rogers, J. A. Inorganic semiconductors for flexible electronics. Adv. Mater. 2007, 19, 1897–1916.
DOI Google Scholar
[40]

Graetzel, M.; Janssen, R. A. J.; Mitzi, D. B.; Sargent, E. H. Materials interface engineering for solution-processed photovoltaics. Nature 2012, 488, 304–312.
DOI Google Scholar
[41]

Chung, I.; Lee, B.; He, J. Q.; Chang, R. P. H.; Kanatzidis, M. G. All-solid-state dye-sensitized solar cells with high efficiency. Nature 2012, 485, 486–489.
DOI Google Scholar
[42]

Nie, W. Y.; Tsai, H.; Asadpour, R.; Blancon, J. C.; Neukirch, A. J.; Gupta, G.; Crochet, J. J.; Chhowalla, M.; Tretiak, S.; Alam, M. A. et al. High-efficiency solution-processed perovskite solar cells with millimeter-scale grains. Science 2015, 347, 522–525.
DOI Google Scholar
[43]

Chen, W.; Wu, Y. Z.; Yue, Y. F.; Liu, J.; Zhang, W. J.; Yang, X. D.; Chen, H.; Bi, E. B.; Ashraful, I.; Grätzel, M. et al. Efficient and stable large-area perovskite solar cells with inorganic charge extraction layers. Science 2015, 350, 944–948.
DOI Google Scholar
[44]

Ott, C.; Reiter, F.; Baumgartner, M.; Pielmeier, M.; Vogel, A.; Walke, P.; Burger, S.; Ehrenreich, M.; Kieslich, G.; Daisenberger, D. et al. Flexible and ultrasoft inorganic 1D semiconductor and heterostructure systems based on SnIP. Adv. Funct. Mater. 2019, 29, 1900233.
DOI Google Scholar
[45]
Adachi, S. Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors; John Wiley & Sons: Chichester, 2009.
DOI
[46]

Al-Douri, Y.; Abid, H.; Aourag, H. Correlation between the bulk modulus and the transition pressure in semiconductors. Mater. Lett. 2005, 59, 2032–2034.
DOI Google Scholar
[47]

Kumar, V.; Shrivastava, A. K.; Jha, V. Bulk modulus and microhardness of tetrahedral semiconductors. J. Phys. Chem. Solids 2010, 71, 1513–1520.
DOI Google Scholar
[48]

Yue, Y. H.; Zhang, Q.; Yang, Z. Y.; Gong, Q. H.; Guo, L. Study of the mechanical behavior of radially grown fivefold twinned nanowires on the atomic scale. Small 2016, 12, 3503–3509.
DOI Google Scholar
[49]

Purschke, D. N.; Pielmeier, M. R. P.; Üzer, E.; Ott, C.; Jensen, C.; Degg, A.; Vogel, A.; Amer, N.; Nilges, T.; Hegmann, F. A. Ultrafast photoconductivity and terahertz vibrational dynamics in double-helix snip nanowires. Adv. Mater. 2021, 33, 2100978.
DOI Google Scholar
[50]
Gere, J. M.; Timoshenko, S. Mechanics of Materials; PWS: Boston, MA, 1997.
[51]

Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758–1775.
DOI Google Scholar
[52]

Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169–11186.
DOI Google Scholar
[53]

Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 1994, 50, 17953–17979.
DOI Google Scholar
[54]
Parker, E. R. Materials Data Book for Engineers and Scientists; McGraw-Hill: New York, 1967.
[55]

Peng, J.; Snyder, G. J. A figure of merit for flexibility. Science 2019, 366, 690–691.
DOI Google Scholar
[56]

Tang, D. M.; Ren, C. L.; Wang, M. S.; Wei, X. L.; Kawamoto, N.; Liu, C.; Bando, Y.; Mitome, M.; Fukata, N.; Golberg, D. Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations. Nano Lett. 2012, 12, 1898–1904.
DOI Google Scholar
[57]

Wang, S. L.; Shan, Z. W.; Huang, H. The mechanical properties of nanowires. Adv. Sci. 2017, 4, 1600332.
DOI Google Scholar
[58]

Zhang, H. T.; Tersoff, J.; Xu, S.; Chen, H. X.; Zhang, Q. B.; Zhang, K. L.; Yang, Y.; Lee, C. S.; Tu, K. N.; Li, J. et al. Approaching the ideal elastic strain limit in silicon nanowires. Sci. Adv. 2016, 2, e1501382.
DOI Google Scholar
[59]

Ostroverkhova, O. Organic optoelectronic materials: Mechanisms and applications. Chem. Rev. 2016, 116, 13279–13412.
DOI Google Scholar
[60]

Liu, X. Y.; Liu, Z. Y.; Li, J. J.; Tan, X. H.; Sun, B.; Fang, H.; Xi, S.; Shi, T. L.; Tang, Z. R.; Liao, G. L. Ultrafast, self-powered and charge-transport-layer-free photodetectors based on high-quality evaporated CsPbBr3 perovskites for applications in optical communication. J. Mater. Chem. C 2020, 8, 3337–3350.
DOI Google Scholar
[61]

Ulbricht, R.; Hendry, E.; Shan, J.; Heinz, T. F.; Bonn, M. Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy. Rev. Mod. Phys. 2011, 83, 543–586.
DOI Google Scholar
[62]

Joyce, H. J.; Boland, J. L.; Davies, C. L.; Baig, S. A.; Johnston, M. B. A review of the electrical properties of semiconductor nanowires: Insights gained from terahertz conductivity spectroscopy. Semicond. Sci. Technol. 2016, 31, 103003.
DOI Google Scholar
[63]

Kužel, P.; Němec, H. Terahertz spectroscopy of nanomaterials: A close look at charge-carrier transport. Adv. Opt. Mater. 2020, 8, 1900623.
DOI Google Scholar
[64]

Shi, X.; Chen, H. Y.; Hao, F.; Liu, R. H.; Wang, T.; Qiu, P. F.; Burkhardt, U.; Grin, Y.; Chen, L. D. Room-temperature ductile inorganic semiconductor. Nat. Mater. 2018, 17, 421–426.
DOI Google Scholar
[65]

Qin, J. K.; Liao, P. Y.; Si, M. W.; Gao, S. Y.; Qiu, G.; Jian, J.; Wang, Q. X.; Zhang, S. Q.; Huang, S. Y.; Charnas, A. et al. Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes. Nat. Electron. 2020, 3, 141–147.
DOI Google Scholar
[66]

Hoff, D. A.; Rego, L. G. C. Chirality-induced propagation velocity asymmetry. Nano Lett. 2021, 21, 8190–8196.
DOI Google Scholar
[67]

Peng, B.; Murakami, S.; Monserrat, B.; Zhang, T. T. Degenerate topological line surface phonons in quasi-1D double helix crystal SnIP. Npj Comput. Mater. 2021, 7, 195.
DOI Google Scholar
[68]

Liu, D.; Wei, R.; Han, L.; Zhu, C.; Dong, S. Ferroelectricity induced by the absorption of water molecules on double helix SnIP. Chin. Phys. B 2022, 32, 037701.
DOI Google Scholar
[69]

Wang, D. Y.; Luo, F.; Lu, M.; Xie, X. J.; Huang, L.; Huang, W. Chemical vapor transport reactions for synthesizing layered materials and their 2D counterparts. Small 2019, 15, 1804404.
DOI Google Scholar
[70]

Khurram, M.; Sun, Z. J.; Zhang, Z. M.; Yan, Q. F. Chemical vapor transport growth of bulk black phosphorus single crystals. Inorg. Chem. Front. 2020, 7, 2867–2879.
DOI Google Scholar
[71]

Wu, Z. X.; Curtin, W. A. Mechanism and energetics of ⟨c + a ⟩ dislocation cross-slip in hcp metals. Proc. Natl. Acad. Sci. USA 2016, 113, 11137–11142.
DOI Google Scholar
[72]

Wang, P.; Zhao, R.; Wu, L. X.; Zhang, M. Z. Effect of Y doping on high-pressure behavior of Ag2S nanocrystals. RSC Adv. 2017, 7, 35105–35110.
DOI Google Scholar
[73]

Aksoy, R.; Selvi, E.; Ma, Y. Z. X-ray diffraction study of molybdenum diselenide to 35.9 GPa. J. Phys. Chem. Solids 2008, 69, 2138–2140.
DOI Google Scholar
[74]

Pradhan, N. R.; Rhodes, D.; Xin, Y.; Memaran, S.; Bhaskaran, L.; Siddiq, M.; Hill, S.; Ajayan, P. M.; Balicas, L. Ambipolar molybdenum diselenide field-effect transistors: Field-effect and hall mobilities. ACS Nano 2014, 8, 7923–7929.
DOI Google Scholar
[75]

Dong, J. S.; Ouyang, G. Thickness-dependent semiconductor-to-metal transition in molybdenum tungsten disulfide alloy under hydrostatic pressure. ACS Omega 2019, 4, 8641–8649.
DOI Google Scholar
[76]

Schmidt, H.; Wang, S. F.; Chu, L. Q.; Toh, M.; Kumar, R.; Zhao, W. J.; Castro Neto, A. H.; Martin, J.; Adam, S.; Özyilmaz, B. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 2014, 14, 1909–1913.
DOI Google Scholar
[77]

Cui, Y.; Xin, R.; Yu, Z. H.; Pan, Y. M.; Ong, Z. Y.; Wei, X. X.; Wang, J. Z.; Nan, H. Y.; Ni, Z. H.; Wu, Y. et al. High-performance monolayer WS2 field-effect transistors on high-κ dielectrics. Adv. Mater. 2015, 27, 5230–5234.
DOI Google Scholar
[78]

Kumar, V.; Singh, J. K.; Prasad, G. M. Elastic properties of elemental, binary and ternary semiconductor materials. Indian J. Pure Appl. Phys. 2015, 53, 429–435.
Google Scholar
[79]
Madelung, O. Semiconductors-Basic Data; Springer Science & Business Media: Berlin, 2012.
[80]

Feng, J. Mechanical properties of hybrid organic–inorganic CH3NH3BX3 (B = Sn, Pb; X = Br, I) perovskites for solar cell absorbers. APL Mater. 2014, 2, 081801.
DOI Google Scholar
[81]

Herz, L. M. Charge-carrier mobilities in metal halide perovskites: Fundamental mechanisms and limits. ACS Energy Lett. 2017, 2, 1539–1548.
DOI Google Scholar
[82]

Ferreira, A. C.; Létoublon, A.; Paofai, S.; Raymond, S.; Ecolivet, C.; Rufflé, B.; Cordier, S.; Katan, C.; Saidaminov, M. I.; Zhumekenov, A. A. et al. Elastic softness of hybrid lead halide perovskites. Phys. Rev. Lett. 2018, 121, 085502.
DOI Google Scholar
[83]

Kresse, G.; Furthmüller, J.; Hafner, J. Theory of the crystal structures of selenium and tellurium: The effect of generalized-gradient corrections to the local-density approximation. Phys. Rev. B 1994, 50, 13181–13185.
DOI Google Scholar
[84]

Bhaskar, P.; Achtstein, A. W.; Diedenhofen, S. L.; Siebbeles, L. D. A. Mobility and decay dynamics of charge carriers in one-dimensional selenium van der Waals solid. J. Phys. Chem. C 2017, 121, 18917–18921.
DOI Google Scholar
[85]

Bandyopadhyay, A. K.; Singh, D. B. Pressure induced phase transformations and band structure of different high pressure phases in tellurium. Pramana 1999, 52, 303–319.
DOI Google Scholar
[86]
Qiu, G.; Si, M. W.; Wang, Y. X.; Lyu, X.; Wu, W. Z.; Ye, P. D. High-performance few-layer tellurium CMOS devices enabled by atomic layer deposited dielectric doping technique. In 76th Device Research Conference (DRC), Santa Barbara, CA, USA, 2018, pp 1–2.
DOI
[87]

Oehzelt, M.; Aichholzer, A.; Resel, R.; Heimel, G.; Venuti, E.; Della Valle, R. G. Crystal structure of oligoacenes under high pressure. Phys. Rev. B 2006, 74, 104103.
DOI Google Scholar
[88]

Jurchescu, O. D.; Popinciuc, M.; van Wees, B. J.; Palstra, T. T. M. Interface-controlled, high-mobility organic transistors. Adv. Mater. 2007, 19, 688–692.
DOI Google Scholar
[89]

Reese, C.; Chung, W. J.; Ling, M. M.; Roberts, M.; Bao, Z. N. High-performance microscale single-crystal transistors by lithography on an elastomer dielectric. Appl. Phys. Lett. 2006, 89, 202108.
DOI Google Scholar
[90]

Wu, Y. F.; Chew, A. R.; Rojas, G. A.; Sini, G.; Haugstad, G.; Belianinov, A.; Kalinin, S. V.; Li, H.; Risko, C.; Brédas, J. L. et al. Strain effects on the work function of an organic semiconductor. Nat. Commun. 2016, 7, 10270.
DOI Google Scholar
[91]

Yamagishi, M.; Takeya, J.; Tominari, Y.; Nakazawa, Y.; Kuroda, T.; Ikehata, S.; Uno, M.; Nishikawa, T.; Kawase, T. High-mobility double-gate organic single-crystal transistors with organic crystal gate insulators. Appl. Phys. Lett. 2007, 90, 182117.
DOI Google Scholar
[92]

Appalakondaiah, S.; Vaitheeswaran, G.; Lebègue, S.; Christensen, N. E.; Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 2012, 86, 035105.
DOI Google Scholar
[93]

Rudenko, A. N.; Brener, S.; Katsnelson, M. I. Intrinsic charge carrier mobility in single-layer black phosphorus. Phys. Rev. Lett. 2016, 116, 246401.
DOI Google Scholar
[94]
Liu, B.; Li, Y. J.; Yue, Y. J.; Tao, Y.; Qin, Z. B.; Cheng, C. Mechanically strengthened amorphous silicon by phosphorus: A molecular dynamics simulation and experimental study. DEStech Trans. Eng. Technol. Res., in press, https://doi.org/10.12783/dtetr/eeec2018/26884.
DOI
[95]

Gao, X. K.; Zhao, Z. High mobility organic semiconductors for field-effect transistors. Sci. China Chem. 2015, 58, 947–968.
DOI Google Scholar
[96]

Lang, U.; Naujoks, N.; Dual, J. Mechanical characterization of PEDOT:PSS thin films. Synth. Met. 2009, 159, 473–479.
DOI Google Scholar
[97]

Wang, X. X.; Zhang, X.; Sun, L.; Lee, D.; Lee, S.; Wang, M. H.; Zhao, J. J.; Shao-Horn, Y.; Dincă, M.; Palacios, T. et al. High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment. Sci. Adv. 2018, 4, eaat5780.
DOI Google Scholar
[98]

Uddin, M. S.; Ju, J. Enhanced coarse-graining of thermoplastic polyurethane elastomer for multiscale modeling. J. Eng. Mater. Technol. 2017, 139, 011001.
DOI Google Scholar
[99]

Park, D. H.; Park, H. W.; Chung, J. W.; Nam, K.; Choi, S.; Chung, Y. S.; Hwang, H.; Kim, B.; Kim, D. H. Highly stretchable, high-mobility, free-standing all-organic transistors modulated by solid-state elastomer electrolytes. Adv. Funct. Mater. 2019, 29, 1808909.
DOI Google Scholar
[100]

Binnewies, M.; Glaum, R.; Schmidt, M.; Schmidt, P. Chemical vapor transport reactions—A historical review. Z. Anorg. Allg. Chem. 2013, 639, 219–229.
DOI Google Scholar
[101]

Zheng, L.; Wang, X. W.; Jiang, H. J.; Xu, M. Z.; Huang, W.; Liu, Z. Recent progress of flexible electronics by 2D transition metal dichalcogenides. Nano Res. 2022, 15, 2413–2432.
DOI Google Scholar
[102]

Lenz, M.; Gruehn, R. Developments in measuring and calculating chemical vapor transport phenomena demonstrated on Cr, Mo, W, and their compounds. Chem. Rev. 1997, 97, 2967–2994.
DOI Google Scholar
[103]
Zhang, T.; Sun, J. R.; Guan, J. Q. Self-supported transition metal chalcogenides for oxygen evolution. Nano Res., in press, https://doi.org/10.1007/s12274-023-5670-6.
DOI
[104]

Utrap, A.; Xiang, N. Y.; Nilges, T. A yield-optimized access to double-helical SnIP via a Sn/SnI2 approach. J. Cryst. Growth 2017, 475, 341–345.
DOI Google Scholar
[105]

Pielmeier, M. R. P.; Nilges, T. Formation mechanisms for phosphorene and SnIP. Angew. Chem., Int. Ed. 2021, 60, 6816–6823.
DOI Google Scholar
[106]

Pielmeier, M. R. P.; Karttunen, A. J.; Nilges, T. Toward atomic-scale inorganic double helices via carbon nanotube matrices-induction of chirality to carbon nanotubes. J. Phys. Chem. C 2020, 124, 13338–13347.
DOI Google Scholar
[107]

Krukau, A. V.; Vydrov, O. A.; Izmaylov, A. F.; Scuseria, G. E. Influence of the exchange screening parameter on the performance of screened hybrid functionals. J. Chem. Phys. 2006, 125, 224106.
DOI Google Scholar
[108]

Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 2006, 27, 1787–1799.
DOI Google Scholar
[109]

Bachhuber, F.; Rothballer, J.; Söhnel, T.; Weihrich, R. Phase stabilities at a glance II: Ternary ordering variants of pyrite and marcasite type structures. Comput. Mater. Sci. 2014, 89, 114–121.
DOI Google Scholar
[110]

Pfitzner, A.; Reiser, S.; Nilges, T. (CuI)2P8Se3: An adduct of D3-symmetrical P8Se3 cage molecules with Cu2I2 rhomboids. Angew. Chem., Int. Ed. 2000, 39, 4160–4162.
DOI Google Scholar
[111]

Nilges, S.; Nilges, T.; Haeuseler, H.; Pfitzner, A. (CuBr)2P8Se3: Preparation, structural, and vibrational spectroscopic characterization of an adduct of P8Se3 cages to Cu2Br2 rhombs. J. Mol. Struct. 2004, 706, 89–94.
DOI Google Scholar
[112]

Pfitzner, A.; Schmitz, D. Two new modifications of [P(C6H5)4]2[Cu2I4]. Z. Anorg. Allg. Chem. 1997, 623, 1555–1560.
DOI Google Scholar
[113]

Hartl, H.; Mahdjour-Hassan-Abadi, F. [(C6H5)4P] ∞1[Cu3I4]-The first compound with a helical chain of face-sharing tetrahedra as a structural element. Angew. Chem., Int. Ed. 1994, 33, 1841–1842.
DOI Google Scholar
[114]
Pfister, D. Reaktivität von phosphor mit hauptgruppenmetallhalogeniden. Ph.D. Dissertation, Technische Universität München, München, Germany, 2017.
[115]
Reiter, F. G. Eindimensionale halbleiter und verbindungen mit kettenförmiger polyphosphidteilstruktur im system der tetrel-phosphor-halogenide APX mit A = Ge, Sn, Pb und X = Br, I. Ph.D. Dissertation, Technische Universität München, München, Germany, 2022.
[116]

Bijoy, T. K.; Murugan, P.; Kumar, V. Atomic structure and electronic properties of A2B2XY (A = Si-Pb, B= Cl-I, and XY = PN and SiS) inorganic double helices: First principles calculations. Phys. Chem. Chem. Phys. 2018, 20, 10060–10068.
DOI Google Scholar
[117]

Bijoy, T. K.; Murugan, P.; Kumar, V. Atomic and electronic structure of solids of Ge2Br2PN, Ge2I2PN, Sn2Cl2PN, Sn2Br2PN and Sn2I2PN inorganic double helices: A first principles study. RSC Adv. 2020, 10, 14714–14719.
DOI Google Scholar
[118]

Kolosov, V. Y.; Thölén, A. R. Transmission electron microscopy studies of the specific structure of crystals formed by phase transition in iron oxide amorphous films. Acta Mater. 2000, 48, 1829–1840.
DOI Google Scholar
[119]

Wu, C. G.; Bein, T. Conducting polyaniline filaments in a mesoporous channel host. Science 1994, 264, 1757–1759.
DOI Google Scholar
[120]

Adekoya, G. J.; Sadiku, R. E.; Ray, S. S. Nanocomposites of PEDOT:PSS with graphene and its derivatives for flexible electronic applications: A review. Macromol. Mater. Eng. 2021, 306, 2000716.
DOI Google Scholar
[121]

Heremans, P.; Tripathi, A. K.; de Jamblinne de Meux, A.; Smits, E. C. P.; Hou, B.; Pourtois, G.; Gelinck, G. H. Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications. Adv. Mater. 2016, 28, 4266–4282.
DOI Google Scholar
[122]

Zhong, H. L.; Huang, J.; Wu, J.; Du, J. H. Electrospinning nanofibers to 1D, 2D, and 3D scaffolds and their biomedical applications. Nano Res. 2022, 15, 787–804.
DOI Google Scholar
[123]

Wang, T.; Bao, Y. W.; Zhuang, M. D.; Li, J. C.; Chen, J. C.; Xu, H. X. Nanoscale engineering of conducting polymers for emerging applications in soft electronics. Nano Res. 2021, 14, 3112–3125.
DOI Google Scholar
[124]

Yang, C. C.; Doong, R. A.; Chen, K. F.; Chen, G. S.; Tsai, Y. P. The photocatalytic degradation of methylene blue by green semiconductor films that is induced by irradiation by a light-emitting diode and visible light. J. Air Waste Manag. Assoc. 2018, 68, 29–38.
DOI Google Scholar
[125]

Üzer, E.; Kumar, P.; Kisslinger, R.; Kar, P.; Thakur, U. K.; Shankar, K.; Nilges, T. Vapor growth of binary and ternary phosphorus-based semiconductors into TiO2 nanotube arrays and application in visible light driven water splitting. Nanoscale Adv. 2019, 1, 2881–2890.
DOI Google Scholar
[126]

Mor, G. K.; Shankar, K.; Paulose, M.; Varghese, O. K.; Grimes, C. A. Use of highly-ordered TiO2 nanotube arrays in dye-sensitized solar cells. Nano Lett. 2006, 6, 215–218.
DOI Google Scholar
[127]

Grotz, C.; Köpf, M.; Baumgartner, M.; Jantke, L. A.; Raudaschl-Sieber, G.; Fässler, T. F.; Nilges, T. Synthesis, structure, and properties of NaP7, a phosphorus-rich polyphosphide. Z. Anorg. Allg. Chem. 2015, 641, 1395–1399.
DOI Google Scholar
[128]

Zhang, J. Y.; Zhao, D.; Xiao, D. B.; Ma, C. S.; Du, H. C.; Li, X.; Zhang, L. H.; Huang, J. L.; Huang, H. Y.; Jia, C. L. et al. Assembly of ring-shaped phosphorus within carbon nanotube nanoreactors. Angew. Chem., Int. Ed. 2017, 56, 1850–1854.
DOI Google Scholar
[129]

Hart, M.; White, E. R.; Chen, J.; McGilvery, C. M.; Pickard, C. J.; Michaelides, A.; Sella, A.; Shaffer, M. S. P.; Salzmann, C. G. Encapsulation and polymerization of white phosphorus inside single-wall carbon nanotubes. Angew. Chem. 2017, 129, 8256–8260.
DOI Google Scholar
[130]

Kumar, U.; Sikarwar, S.; Sonker, R. K.; Yadav, B. C. Carbon nanotube: Synthesis and application in solar cell. J. Inorg. Organomet. Polym. Mater. 2016, 26, 1231–1242.
DOI Google Scholar
[131]

Pielmeier, M. R. P.; Degg, A.; Vosseler, K.; Nilges, T. Nanotube matrices for flexible SnIP nanowires. J. Phys. Chem. C 2022, 126, 12603–12614.
DOI Google Scholar
[132]
Wu, H.; Huang, Q. X.; Shi, Y. Y.; Chang, J. W.; Lu, S. Y. Electrocatalytic water splitting: Mechanism and electrocatalyst design. Nano Res., in press, https://doi.org/10.1007/s12274-023-5502-8.
DOI
[133]

Li, J. H.; Zhang, Y. M.; Huang, Y. L.; Luo, B.; Jing, L.; Jing, D. W. Noble-metal free plasmonic nanomaterials for enhanced photocatalytic applications—A review. Nano Res. 2022, 15, 10268–10291.
DOI Google Scholar
[134]

Fedotov, V. A.; Mladyonov, P. L.; Prosvirnin, S. L.; Rogacheva, A. V.; Chen, Y.; Zheludev, N. I. Asymmetric propagation of electromagnetic waves through a planar chiral structure. Phys. Rev. Lett. 2006, 97, 167401.
DOI Google Scholar
[135]

Plum, E.; Zhou, J.; Dong, J.; Fedotov, V. A.; Koschny, T.; Soukoulis, C. M.; Zheludev, N. I. Metamaterial with negative index due to chirality. Phys. Rev. B 2009, 79, 035407.
DOI Google Scholar
[136]

Zhou, J. F.; Dong, J. F.; Wang, B. N.; Koschny, T.; Kafesaki, M.; Soukoulis, C. M. Negative refractive index due to chirality. Phys. Rev. B 2009, 79, 121104.
DOI Google Scholar
[137]

Forrest, S. R. The path to ubiquitous and low-cost organic electronic appliances on plastic. Nature 2004, 428, 911–918.
DOI Google Scholar
Publication history
Copyright
Acknowledgements

Publication history

Received: 30 May 2023
Revised: 05 July 2023
Accepted: 08 July 2023
Published: 24 August 2023
Issue date: March 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 52072198).

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