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Review Article

Molecular design for enhanced spin transport in molecular semiconductors

Tingting Yang1,2,§Yang Qin1,2,§Xianrong Gu1( )Xiangnan Sun1,2,3 ( )
Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China

§ Tingting Yang and Yang Qin contributed equally to this work.

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Abstract

Molecular semiconductors (MSCs), characterized by a longer spin lifetime than most of other materials due to their weak spin relaxation mechanisms, especially at room temperature, together with their abundant chemical tailorability and flexibility, are regarded as promising candidates for spintronic applications. Molecular spintronics, as an emerging subject that utilizes the unique properties of MSCs to study spin-dependent phenomena and properties, has attracted wide attention. In molecular spintronic devices, MSCs play the role as medium for information transport, process, and storage, in which the efficient spin inject–transport process is the prerequisite. Herein, we focus mainly on summarizing and discussing the recent advances in theoretical principles towards spin transport of MSCs in terms of the injection of spin-polarized carriers through the ferromagnetic metal/MSC interface and the subsequent transport within the MSC layer. Based on the theoretical progress, we cautiously present targeted design strategies of MSCs that contribute to the optimization of spin-transport efficiency and give favorable approaches to exploring accessional possibilities of spintronic materials. Finally, challenges and prospects regarding current spin transport are also presented, aiming to promote the development and application of the rosy and energetic field of molecular spintronics.

Graphical Abstract

Spin transport performance in molecular semiconductors can be effectively improved by appropriate molecular design from the perspective of ferromagnet/molecular semiconductor interface and molecular semiconductors properties, which has increasingly become the mainstream in molecular spintronics.

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Nano Research
Pages 13457-13473

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Cite this article:
Yang T, Qin Y, Gu X, et al. Molecular design for enhanced spin transport in molecular semiconductors. Nano Research, 2023, 16(12): 13457-13473. https://doi.org/10.1007/s12274-023-5989-z
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Received: 28 April 2023
Revised: 26 June 2023
Accepted: 06 July 2023
Published: 08 September 2023
© Tsinghua University Press 2023