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Nano Research 2023, 16(8): 11096-11106 https://doi.org/10.1007/s12274-023-5845-1
Research Article | Issue | Published: 18 July 2023

The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

Show Author's Information Zhiwei Si1,2,  Zongliang Liu2,4( ),  Xiaoxuan Wang5,  Chunxiang Xu5,  Wei Lin6,  Xiaoxuan Luo6,  Feng Li6,  Xiaoming Dong2,  Shunan Zheng2,  Xiaodong Gao2,  Jianfeng Wang1,2,3,4( ),  Ke Xu1,2,3,4( )
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Suzhou Nanowin Science and Technology Co, Ltd., Suzhou 215123, China
Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou 215123, China
State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Keywords:
lasing, homogeneous lateral epitaxy, spatially resolved cathodoluminescence, deep energy level, GaN microdisk
Topics:
Morphology
Cite this article:
Si Z, Liu Z, Wang X, et al. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action. Nano Research, 2023, 16(8): 11096-11106. https://doi.org/10.1007/s12274-023-5845-1
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Abstract Full text Electronic supplementary material About this article

There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the { 101¯1}-growth sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface (Ra < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 104 μJ/cm2) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.


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Electronic supplementary material
About this article

The effect of lateral growth of self-assembled GaN microdisks on UV lasing action

Show Author's information Zhiwei Si1,2, Zongliang Liu2,4( ), Xiaoxuan Wang5, Chunxiang Xu5, Wei Lin6, Xiaoxuan Luo6, Feng Li6, Xiaoming Dong2, Shunan Zheng2, Xiaodong Gao2, Jianfeng Wang1,2,3,4( ), Ke Xu1,2,3,4( )
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Suzhou Nanowin Science and Technology Co, Ltd., Suzhou 215123, China
Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou 215123, China
State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Abstract

There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the { 101¯1}-growth sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface (Ra < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 104 μJ/cm2) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.

Keywords: lasing, homogeneous lateral epitaxy, spatially resolved cathodoluminescence, deep energy level, GaN microdisk

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Publication history
Copyright
Acknowledgements

Publication history

Received: 26 February 2023
Revised: 17 May 2023
Accepted: 21 May 2023
Published: 18 July 2023
Issue date: August 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

We thank Dr. JueMin Yi and Dr. Miao Wang in Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO) for valuable discussions. This work was supported by the National Key R&D Program of China (No. 2021YFB3602000) and the Fundamental Research Funds for the Central Universities (No. WK5290000003). The authors are grateful for the technical support for Nano-X from SINANO.

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