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This study reports an efficient method for growing high-quality boron nitride nanotubes (BNNTs) via chemical vapor deposition of low-melting-point precursors—magnesium diboride (MgB2), magnesium nitride (Mg3N2), and diboron trioxide (B2O) at a growth temperature of 1000–1300 °C. The strong oxygen-capturing ability of Mg3N2 inhibits the formation of high-melting-point Mg3B2O6, which helps MgB2 to maintain an efficient and stable catalytic capacity, thereby enhancing its growth efficiency and utilization of the boron source. Moreover, polydimethylsiloxane (PDMS) composites formed from these BNNTs demonstrated much greater thermal conductivities than pure PDMS. Thus, this novel strategy for preparing BNNTs is efficient, and they have great potential for application as thermal interface materials.


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Growth of boron nitride nanotubes from magnesium-based catalysts

Show Author's information Ying Wang1,§Kai Zhang1,§Liyun Wu1,§Xuhua He1Qian He1Nanyang Wang1Zhengyang Zhou1Chaowei Li2Yue Hu3Yagang Yao1( )
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Henan Key Laboratory of New Optoelectronic Functional Materials, College of Chemistry and Chemical Engineering, Anyang Normal University, 436 Xian'ge Road, Anyang 455000, China
Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, China

§ Ying Wang, Kai Zhang, and Liyun Wu contributed equally to this work.

Abstract

This study reports an efficient method for growing high-quality boron nitride nanotubes (BNNTs) via chemical vapor deposition of low-melting-point precursors—magnesium diboride (MgB2), magnesium nitride (Mg3N2), and diboron trioxide (B2O) at a growth temperature of 1000–1300 °C. The strong oxygen-capturing ability of Mg3N2 inhibits the formation of high-melting-point Mg3B2O6, which helps MgB2 to maintain an efficient and stable catalytic capacity, thereby enhancing its growth efficiency and utilization of the boron source. Moreover, polydimethylsiloxane (PDMS) composites formed from these BNNTs demonstrated much greater thermal conductivities than pure PDMS. Thus, this novel strategy for preparing BNNTs is efficient, and they have great potential for application as thermal interface materials.

Keywords: chemical vapor deposition (CVD), boron nitride nanotubes (BNNTs), low-melting-point, thermal conductivities

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Publication history
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Acknowledgements

Publication history

Received: 14 March 2023
Revised: 01 May 2023
Accepted: 12 May 2023
Published: 23 June 2023
Issue date: August 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 51972162).

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