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Research Article

Simulating the obstacle avoidance behavior day and night based on the visible-infrared MoS2/Ge heterojunction field-effect phototransistor

Zhao Han1Bo Wang1Jie You1Qiancui Zhang1Yichi Zhang1Tian Miao1Ningning Zhang1Dongdong Lin2Zuimin Jiang3Renxu Jia1Jincheng Zhang1Hui Guo1Huiyong Hu1Liming Wang1( )
Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315211, China
Department of Physics, Fudan University, Shanghai 200433, China
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Graphical Abstract

In this article, we use the synergy of a MoS2/Ge heterojunction field-effect phototransistor and a piezoresistor to simulate the obstacle avoidance behavior of a guide dog. Moreover, passive and active detection modes are used during the day and night respectively, helping to reduce the detector’s energy consumption.

Abstract

The contradiction between the high number of visually handicapped people and the scarcity of guide dogs has stimulated the demand for electronic guide dogs (EGDs). Here, we demonstrate an EGD by leveraging piezoresistors on a MoS2/Ge heterostructure for simultaneous pressure-sensing and optical-sensing functions. The device has excellent gating capability and exhibits large positive and negative photoresponses under visible (532 nm, 182 A/W) and infrared (1550 nm, 37 A/W) illumination. These characteristics allow the device to efficiently classify different obstacles at all times of day using pressure and light signals. The device reaches nearly 100% accuracy after 48 training sessions when used to classify frequent scenes. The device adopts passive and active detection modes during the day and night, respectively, which improves the battery life of the EGD. This work provides a significant reference for the future design of EGDs, which may help a greater number of visually impaired people by reducing the cost of such devices.

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Nano Research
Pages 11296-11302
Cite this article:
Han Z, Wang B, You J, et al. Simulating the obstacle avoidance behavior day and night based on the visible-infrared MoS2/Ge heterojunction field-effect phototransistor. Nano Research, 2023, 16(8): 11296-11302. https://doi.org/10.1007/s12274-023-5816-6
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Received: 08 March 2023
Revised: 24 April 2023
Accepted: 07 May 2023
Published: 12 July 2023
© Tsinghua University Press 2023
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