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Nano Research 2023, 16(8): 11278-11287 https://doi.org/10.1007/s12274-023-5789-5
Research Article | Issue | Published: 24 May 2023

A robust graphene oxide memristor enabled by organic pyridinium intercalation for artificial biosynapse application

Show Author's Information Yang Li1,§( ),  Songtao Ling1,§,  Ruiyu He1,  Cheng Zhang1( ),  Yue Dong1,  Chunlan Ma1,  Yucheng Jiang1,  Ju Gao1,  Jinghui He2,  Qichun Zhang3,4( )
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
College of Chemistry, Chemical Engineering, and Materials Science, Soochow University, Suzhou 215123, China
Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
Department of Chemistry & Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China

§ Yang Li and Songtao Ling contributed equally to this work.

Keywords:
graphene oxide, flexible electronics, 2D materials, artificial synapses, nanoscale memristor
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Nanoelectronics
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Li Y, Ling S, He R, et al. A robust graphene oxide memristor enabled by organic pyridinium intercalation for artificial biosynapse application. Nano Research, 2023, 16(8): 11278-11287. https://doi.org/10.1007/s12274-023-5789-5
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Abstract Full text Electronic supplementary material About this article

Graphene oxide (GO)-based memristors offer the promise of low cost, eco-friendliness, and mechanical flexibility, making them attractive candidates for outstanding flexible electronic devices. However, their resistive transitions often display abrupt change rather than bidirectional progressive tuning, which largely limits their applications for biological synapse emulation and neuromorphic computing. Here, a memristor with a novel layered structure of GO/pyridinium/GO is presented with tunable bidirectional feature. The inserted organic pyridinium intercalation succeeds in serving as a satisfactory buffer layer to intrinsically control the formation of conductive filaments during device operation, leading to progressive conductance regulation. Thus, the essential synaptic behaviors including analog memory characteristics, excitatory postsynaptic current, paired pulse facilitation, prepulse inhibition, spike-timing-dependent plasticity, and spike-rate-dependent plasticity are replicated. The emulation of brain-like “learning-forgetting-relearning” process is also implemented. Additionally, the instant responses of the memristor can be stimulated by low operational voltages and short pulse widths. This study paves one way for GO-based memristors to actuate appealing features such as bidirectional tuning and fast speed switching that are desirable for the development of bio-inspired neuromorphic systems.


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Electronic supplementary material
About this article

A robust graphene oxide memristor enabled by organic pyridinium intercalation for artificial biosynapse application

Show Author's information Yang Li1,§( ), Songtao Ling1,§, Ruiyu He1, Cheng Zhang1( ), Yue Dong1, Chunlan Ma1, Yucheng Jiang1, Ju Gao1, Jinghui He2, Qichun Zhang3,4( )
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
College of Chemistry, Chemical Engineering, and Materials Science, Soochow University, Suzhou 215123, China
Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
Department of Chemistry & Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China

§ Yang Li and Songtao Ling contributed equally to this work.

Abstract

Graphene oxide (GO)-based memristors offer the promise of low cost, eco-friendliness, and mechanical flexibility, making them attractive candidates for outstanding flexible electronic devices. However, their resistive transitions often display abrupt change rather than bidirectional progressive tuning, which largely limits their applications for biological synapse emulation and neuromorphic computing. Here, a memristor with a novel layered structure of GO/pyridinium/GO is presented with tunable bidirectional feature. The inserted organic pyridinium intercalation succeeds in serving as a satisfactory buffer layer to intrinsically control the formation of conductive filaments during device operation, leading to progressive conductance regulation. Thus, the essential synaptic behaviors including analog memory characteristics, excitatory postsynaptic current, paired pulse facilitation, prepulse inhibition, spike-timing-dependent plasticity, and spike-rate-dependent plasticity are replicated. The emulation of brain-like “learning-forgetting-relearning” process is also implemented. Additionally, the instant responses of the memristor can be stimulated by low operational voltages and short pulse widths. This study paves one way for GO-based memristors to actuate appealing features such as bidirectional tuning and fast speed switching that are desirable for the development of bio-inspired neuromorphic systems.

Keywords: graphene oxide, flexible electronics, 2D materials, artificial synapses, nanoscale memristor

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Publication history
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Acknowledgements

Publication history

Received: 07 February 2023
Revised: 17 April 2023
Accepted: 02 May 2023
Published: 24 May 2023
Issue date: August 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

Y. L. acknowledges financial support from the National Natural Science Foundation of China (No. 22008164), the Natural Science Foundation of Jiangsu Province (No. BK20190939), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Nos. 19KJB150018 and 22KJB150037), and the foundation of Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, Jiangnan University (No. 1042050205225990/007). Q. C. Z. thanks the funding support from City University of Hong Kong (Nos. 9380117, 7005620 and 7020040) and Hong Kong Institute for Advanced Study, City University of Hong Kong, China and State Key Laboratory of Supramolecular Structure and Materials, Jilin University (No. sklssm2023034), China. This work is also supported by the Natural Science Foundation of China (Nos. 12274316 and 11974304) and Jiangsu Key Disciplines of the Fourteenth Five-Year Plan (No. 2021135).

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