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Nano Research 2023, 16(12): 12949-12961 https://doi.org/10.1007/s12274-023-5693-z
Review Article | Issue | Published: 18 May 2023

The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups

Show Author's Information Hongxing Liu1,2,  Tingting Dai2,  Jialing Zhou2,  Helin Wang2( ),  Qing Guo1,  Qiang Guo1,  Erjun Zhou1,2( )
Henan Institute of Advanced Technology, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450003, China
National Center for Nanoscience and Technology, Beijing 100190, China
Keywords:
high voltage, organic photovoltaic, non-halogenated end group, non-fullerene acceptor, energy loss
Topics:
Organic solar cells
Cite this article:
Liu H, Dai T, Zhou J, et al. The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups. Nano Research, 2023, 16(12): 12949-12961. https://doi.org/10.1007/s12274-023-5693-z
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Abstract Full text About this article

Compared with perovskite solar cells and silicon solar cells, the excessive voltage loss (Vloss) becomes a stubborn stone that seriously hinders the further improvement of organic photovoltaic (OPV). Thus, many researchers focus on finding an effective material system to achieve high-performance OPVs with low Vloss. In recent 5 years, acceptor-donor-acceptor’-donor-acceptor (A-DA’D-A) type non-fullerene acceptors (NFAs) have attracted great attention because of their promising photovoltaic performance. Among them, A-DA’D-A type NFAs containing non-halogenated end group (NHEG) exhibit the large potential to achieve high open-circuit voltage (VOC) for the state-of-the-art OPVs, because of high-lying molecular energy levels and decreasing Vloss. In this review, we systematically summarize the recent development of A-DA’D-A type NHEG-NFAs and the impact of different NHEGs on the optoelectronic properties as well as the photovoltaic performance. In addition, we especially analyze the Vloss of NHEG-NFAs in the binary and ternary OPV devices. At last, we provide perspectives on the further molecular design and future challenges for this kind of materials as well as suggested solutions.


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About this article

The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups

Show Author's information Hongxing Liu1,2, Tingting Dai2, Jialing Zhou2, Helin Wang2( ), Qing Guo1, Qiang Guo1, Erjun Zhou1,2( )
Henan Institute of Advanced Technology, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450003, China
National Center for Nanoscience and Technology, Beijing 100190, China

Abstract

Compared with perovskite solar cells and silicon solar cells, the excessive voltage loss (Vloss) becomes a stubborn stone that seriously hinders the further improvement of organic photovoltaic (OPV). Thus, many researchers focus on finding an effective material system to achieve high-performance OPVs with low Vloss. In recent 5 years, acceptor-donor-acceptor’-donor-acceptor (A-DA’D-A) type non-fullerene acceptors (NFAs) have attracted great attention because of their promising photovoltaic performance. Among them, A-DA’D-A type NFAs containing non-halogenated end group (NHEG) exhibit the large potential to achieve high open-circuit voltage (VOC) for the state-of-the-art OPVs, because of high-lying molecular energy levels and decreasing Vloss. In this review, we systematically summarize the recent development of A-DA’D-A type NHEG-NFAs and the impact of different NHEGs on the optoelectronic properties as well as the photovoltaic performance. In addition, we especially analyze the Vloss of NHEG-NFAs in the binary and ternary OPV devices. At last, we provide perspectives on the further molecular design and future challenges for this kind of materials as well as suggested solutions.

Keywords: high voltage, organic photovoltaic, non-halogenated end group, non-fullerene acceptor, energy loss

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Publication history
Copyright
Acknowledgements

Publication history

Received: 06 February 2023
Revised: 16 March 2023
Accepted: 26 March 2023
Published: 18 May 2023
Issue date: December 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

The authors thank the support from the National Natural Science Foundation of China (No. 22109142) and the Outstanding Talent Research Fund of Zhengzhou University (Nos. 32340035 and 32340100).

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