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Nano Research 2023, 16(7): 10215-10221 https://doi.org/10.1007/s12274-023-5635-9
Research Article | Issue | Published: 05 May 2023

High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment

Show Author's Information Qianqing Hu1,  Junjie Si1( ),  Desui Chen2,  Xiaoming Hao1,  Rui Xu1,  Yihang Du1,  Zhuopeng Du1,  Xinquan Gong1,  Hong Zhao1,  Peiqing Cai1,  Qi Ai1,  Xin Yao1,  Yu Yan3,  Zenan Zhang1,  Muzhi Cai1,  Wei Liu4,  Yongyin Kang5,  Zugang Liu1( )
College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing Key Laboratory of Flexible Electronics based Intelligent Sensing and Advanced Manufacturing Technology, Jiaxing 314000, China
Zhejiang Najing Technology Co., Ltd., Quzhou 324004, China
Najing Technology Corporation Ltd., Hangzhou 310052, China
Keywords:
quantum dots, electroluminescence, solvent-resistance, inverted, all solution processing
Topics:
Light emitting diodes
Cite this article:
Hu Q, Si J, Chen D, et al. High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment. Nano Research, 2023, 16(7): 10215-10221. https://doi.org/10.1007/s12274-023-5635-9
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Abstract Full text Electronic supplementary material About this article

All-solution-processed inverted quantum dot (QD) light-emitting diodes (QLEDs) with transparent bottom cathodes can be directly connected to the n-type thin-film transistors, offering a feasible solution for low-cost active matrix-driven QD displays. However, the subsequent solution-deposition of the hole-transporting layer destroys the underneath QD films, resulting in largely deteriorated device performance. Various strategies have been implemented to prevent QD film from dissolution, but all at a heavy cost of device performance suffering from either reduced efficiency or increased driving voltage. Here, a facile and effective water-treatment approach for QD film to fabricate inverted QLEDs through all solution processing is reported. The water treatment substitutes the long-chain oleate ligands with hydroxyl groups, resulting in significantly improved non-polar solvent resistance of the QD films. Importantly, the QD films reserve their excellent photoluminescence efficiency after water treatment. With the water-treated QD film as the emissive layer, all-solution-processed inverted red QLED with a peak external quantum efficiency of 19.6%, a turn-on voltage of 1.8 V, and a T50 operational lifetime of 150,000 h at 100 cd·m−2 was achieved. Furthermore, efficient and low-voltage-driven green and blue QLEDs can also be prepared with this method. This work provides a feasible strategy for the fabrication of high-performance all-solution-processed inverted QLEDs, paving the way toward achieving QLEDs by all ink-jet printing.


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Abstract
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Electronic supplementary material
About this article

High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment

Show Author's information Qianqing Hu1, Junjie Si1( ), Desui Chen2, Xiaoming Hao1, Rui Xu1, Yihang Du1, Zhuopeng Du1, Xinquan Gong1, Hong Zhao1, Peiqing Cai1, Qi Ai1, Xin Yao1, Yu Yan3, Zenan Zhang1, Muzhi Cai1, Wei Liu4, Yongyin Kang5, Zugang Liu1( )
College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing Key Laboratory of Flexible Electronics based Intelligent Sensing and Advanced Manufacturing Technology, Jiaxing 314000, China
Zhejiang Najing Technology Co., Ltd., Quzhou 324004, China
Najing Technology Corporation Ltd., Hangzhou 310052, China

Abstract

All-solution-processed inverted quantum dot (QD) light-emitting diodes (QLEDs) with transparent bottom cathodes can be directly connected to the n-type thin-film transistors, offering a feasible solution for low-cost active matrix-driven QD displays. However, the subsequent solution-deposition of the hole-transporting layer destroys the underneath QD films, resulting in largely deteriorated device performance. Various strategies have been implemented to prevent QD film from dissolution, but all at a heavy cost of device performance suffering from either reduced efficiency or increased driving voltage. Here, a facile and effective water-treatment approach for QD film to fabricate inverted QLEDs through all solution processing is reported. The water treatment substitutes the long-chain oleate ligands with hydroxyl groups, resulting in significantly improved non-polar solvent resistance of the QD films. Importantly, the QD films reserve their excellent photoluminescence efficiency after water treatment. With the water-treated QD film as the emissive layer, all-solution-processed inverted red QLED with a peak external quantum efficiency of 19.6%, a turn-on voltage of 1.8 V, and a T50 operational lifetime of 150,000 h at 100 cd·m−2 was achieved. Furthermore, efficient and low-voltage-driven green and blue QLEDs can also be prepared with this method. This work provides a feasible strategy for the fabrication of high-performance all-solution-processed inverted QLEDs, paving the way toward achieving QLEDs by all ink-jet printing.

Keywords: quantum dots, electroluminescence, solvent-resistance, inverted, all solution processing

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Publication history
Copyright
Acknowledgements

Publication history

Received: 10 January 2023
Revised: 01 March 2023
Accepted: 03 March 2023
Published: 05 May 2023
Issue date: July 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 61905230, 52072355, 11904345, 52103241, and 61904160), Natural Science Foundation of Zhejiang Province (No. LQ19F040004), and the Liu Zugang Expert Workstation of Yunnan Province.

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