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Research Article

Interlayer sensitized van der Waals heterojunction photodetector with enhanced performance

Huide Wang1,4Yonghong Zeng1FanXu Meng5Rui Cao1Yi Liu1Zhinan Guo2( )Tingting Wang6Haiguo Hu1,2Sidi Fan1Yatao Yang4S. Wageh7Omar A. Al-Hartomy7Abul Kalam8,9Yonghong Shao3Yu-Jia Zeng3( )Dianyuan Fan1Han Zhang1( )
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute of Microscale Optoelectronics, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Guangzhou Key Laboratory of Sensing Materials and Devices, Center for Advanced Analytical Science, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, China
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Center of Characterization and Analysis, Jilin Institute of Chemical Technology, Jilin 132022, China
School of Mathematical & Physical Sciences, Wuhan Textile University, Wuhan 430200, China
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
Department of Chemistry, College of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
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Abstract

Although photodetection based on two-dimensional (2D) van der Waals (vdWs) P–N heterojunction has attracted extensive attention recently, their low responsivity (R) due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area. Here, a black phosphorus/rhodamine 6G/molybdenum disulfide (BP/R6G/MoS2) photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers. The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules. The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed. Among them, the R increased by 14.8–20.4 times, and the specific detectivity (D*) increased by 24.9–34.4 times. The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.

Graphical Abstract

A black phosphorus/rhodamine 6G/molybdenum disulfide (BP/R6G/MoS2) photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers. The formed van der Waals (vdWs) heterojunction achieves enhanced photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.

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Nano Research
Pages 10537-10544

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Cite this article:
Wang H, Zeng Y, Meng F, et al. Interlayer sensitized van der Waals heterojunction photodetector with enhanced performance. Nano Research, 2023, 16(7): 10537-10544. https://doi.org/10.1007/s12274-023-5611-4
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Received: 30 November 2022
Revised: 22 February 2023
Accepted: 23 February 2023
Published: 19 April 2023
© Tsinghua University Press 2023