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Zigzag graphene nanoribbons (ZGNRs) with spin-polarized edge states have potential applications in carbon-based spintronics. The electronic structure of ZGNRs can be effectively tuned by different widths or dopants, which requires delicately designed monomers. Here, we report the successful synthesis of ZGNR with a width of eight carbon zigzag lines and nitrogen-boron-nitrogen (NBN) motifs decorated along the zigzag edges (NBN-8-ZGNR) on Au (111) surface, which starts from a specially designed U-shaped monomer with preinstalled NBN units at the zigzag edge. Chemical-bond-resolved non-contact atomic force microscopy (nc-AFM) imaging confirms the zigzag-terminated edges and the existence of NBN dopants. The electronic states distributed along the zigzag edges have been revealed after a silicon-layer intercalation at the interface of NBN-8-ZGNR and Au (111). Our work enriches the ZGNR family with a new dopant and larger width, which provides more candidates for future carbon-based nanoelectronic and spintronic applications.
Zigzag graphene nanoribbons (ZGNRs) with spin-polarized edge states have potential applications in carbon-based spintronics. The electronic structure of ZGNRs can be effectively tuned by different widths or dopants, which requires delicately designed monomers. Here, we report the successful synthesis of ZGNR with a width of eight carbon zigzag lines and nitrogen-boron-nitrogen (NBN) motifs decorated along the zigzag edges (NBN-8-ZGNR) on Au (111) surface, which starts from a specially designed U-shaped monomer with preinstalled NBN units at the zigzag edge. Chemical-bond-resolved non-contact atomic force microscopy (nc-AFM) imaging confirms the zigzag-terminated edges and the existence of NBN dopants. The electronic states distributed along the zigzag edges have been revealed after a silicon-layer intercalation at the interface of NBN-8-ZGNR and Au (111). Our work enriches the ZGNR family with a new dopant and larger width, which provides more candidates for future carbon-based nanoelectronic and spintronic applications.
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The work was supported by grants from the National Key Research and Development Program of China (No. 2019YFA0308500), the National Natural Science Foundation of China (No. 61888102), the Chinese Academy of Sciences (Nos. XDB30000000 and YSBR-003), the EU Graphene Flagship (Graphene Core 3, No. 881603), the H2020-MSCA-ITN (ULTIMATE, No. 813036), the Center for Advancing Electronics Dresden (CfAED), the H2020-EU.1.2.2.-FET Proactive Grant (LIGHT-CAP, No. 101017821), and the DFG-SNSF Joint Switzerland-German Research Project (EnhanTopo, No. 429265950).