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Research Article

Versatile memristor implemented in van der Waals CuInP2S6

Yiqun Liu, Yonghuang Wu, Bolun Wang, Hetian Chen, Di Yi, Kai Liu, Ce-Wen Nan, Jing Ma( )
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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Graphical Abstract

Volatile and non-volatile functions can be realized simultaneously in Ag/CIPS/Au (CIPS: CuInP2S6) memristor by regulating compliance currents. Such versatile memristor with excellent performances is expected to be used as selectors and memories in advanced data processing and demonstrates its possible applications in neuromorphic computing.

Abstract

Memristors are playing an increasingly important role in developing in-memory computing. Versatile memristors which offer both volatile and non-volatile performances can be employed as both memories and selectors, displaying unique advantages for developing novel electronic circuits. Herein, the remarkable multifunctional memristor with switchable operating modes between volatile and non-volatile by regulating compliance currents is implemented in Ag/CIPS/Au (CIPS: CuInP2S6) device. Diode-like volatile memristor performances with the rectification ratio of 103 and an endurance of 500 switching cycles were obtained. Meanwhile, significant non-volatile memory performances with on/off ratio of 103 and retention up to 104 s were also developed, which enables it to be utilized as selectors and memories simultaneously. Moreover, such versatile memristor can emulate the short-term plasticity (STP) and long-term plasticity (LTP) of artificial synapse, demonstrating its advantages in neuromorphic computing applications.

Keywords

CuInP2S6 (CIPS)versatile memristorconductive filamentsynaptic plasticity

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Nano Research
Volume 16 Issue 7,
July 2023
Pages 10191-10197
DOI: 10.1007/s12274-023-5583-4
Cite this article:
Liu Y, Wu Y, Wang B, et al. Versatile memristor implemented in van der Waals CuInP2S6. Nano Research, 2023, 16(7): 10191-10197. https://doi.org/10.1007/s12274-023-5583-4
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Received: 05 December 2022
Revised: 04 February 2023
Accepted: 15 February 2023
Published: 31 March 2023
© Tsinghua University Press 2023
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