Integrating surface and interface engineering to improve optoelectronic performance and environmental stability of MXene-based heterojunction towards broadband photodetection
),
Zhiming Chen1(
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Two-/three-dimensional (2D/3D) heterojunction-based photodetectors have attracted much attention due to their highly efficient photoelectric conversion driven by the built-in electric field for high-speed photoresponse. However, a large dark current induced by unexpected surface states at the interface between 2D materials and 3D bulks is widely observed in such structures, greatly degrading their optoelectronic performance. Herein, a heterojunction of proton acid HCl treated MXene (H-MXene)/TiO2/Si via integrating surface and interface engineering is fabricated, which exhibits decreased dark current and improved environmental stability. A feasible strategy to optimize the interface properties between MXene and Si is proposed by an in-situ oxidation process of MXene into TiO2, resulting in a suppressed dark current as well as high specific detectivity. Benefitting from the enhanced light absorption of MXene on the bulk Si substrate, the photoresponse of as-fabricated devices in the near-infrared region is also elevated. Moreover, the treatment of proton acid HCl on the surface of MXene brings better conductivity and environmental stability due to the decreased layer spacing of MXene, which is further confirmed by both experimental and theoretical methods. This work opens a unique way to comprehensively boost the optoelectronic performance of MXene-based photodetectors.
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Integrating surface and interface engineering to improve optoelectronic performance and environmental stability of MXene-based heterojunction towards broadband photodetection
), Zhiming Chen1(
)
Abstract
Two-/three-dimensional (2D/3D) heterojunction-based photodetectors have attracted much attention due to their highly efficient photoelectric conversion driven by the built-in electric field for high-speed photoresponse. However, a large dark current induced by unexpected surface states at the interface between 2D materials and 3D bulks is widely observed in such structures, greatly degrading their optoelectronic performance. Herein, a heterojunction of proton acid HCl treated MXene (H-MXene)/TiO2/Si via integrating surface and interface engineering is fabricated, which exhibits decreased dark current and improved environmental stability. A feasible strategy to optimize the interface properties between MXene and Si is proposed by an in-situ oxidation process of MXene into TiO2, resulting in a suppressed dark current as well as high specific detectivity. Benefitting from the enhanced light absorption of MXene on the bulk Si substrate, the photoresponse of as-fabricated devices in the near-infrared region is also elevated. Moreover, the treatment of proton acid HCl on the surface of MXene brings better conductivity and environmental stability due to the decreased layer spacing of MXene, which is further confirmed by both experimental and theoretical methods. This work opens a unique way to comprehensively boost the optoelectronic performance of MXene-based photodetectors.
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Acknowledgements
H. P. W. from Tsinghua University contributed to the theoretical calculation. All the authors discussed and participated into the paper writing. The authors are grateful for the financial support from the National Natural Science Foundation of China (Nos. 62104017 and 62074015), the project funded by China Postdoctoral Science Foundation under Grant 2022M720422 and Beijing Institute of Technology Research Fund Program for Young Scholars. We also thanked the Tsinghua Xuetang Talents Program.
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