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Multi-sensory neuromorphic devices (MND) have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data. However, the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity, which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system. Here, a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors (FGT) is fabricated. The CsPbBr3/TiO2 core–shell nanocrystals (NCs) prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer. The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature. Surprisingly, when the temperature varies from 20 to 120 °C back and forth, the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors, which contributes to the efficient visual/thermal fusion perception. This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors (OFET).


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Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement

Show Author's information Gengxu Chen1,2,§( )Xipeng Yu1,2,§Changsong Gao1,2Yan Dai1,2Yanxue Hao1,2Rengjian Yu1,2Huipeng Chen1,2( )Tailiang Guo1,2
National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China

§ Gengxu Chen and Xipeng Yu contributed equally to this work.

Abstract

Multi-sensory neuromorphic devices (MND) have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data. However, the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity, which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system. Here, a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors (FGT) is fabricated. The CsPbBr3/TiO2 core–shell nanocrystals (NCs) prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer. The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature. Surprisingly, when the temperature varies from 20 to 120 °C back and forth, the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors, which contributes to the efficient visual/thermal fusion perception. This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors (OFET).

Keywords: temperature, perovskite nanocrystals, floating gate phototransistors, multisensory neuromorphic devices

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Publication history
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Acknowledgements

Publication history

Received: 22 November 2022
Revised: 16 December 2022
Accepted: 26 December 2022
Published: 22 February 2023
Issue date: May 2023

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

The authors wish to acknowledge the National Natural Science Foundation of China (Nos. 62274035, U21A20497, 61974029, and 11604051), the National Key Research and Development Program of China (Nos. 2022YFB3603803 and 2022YFB3603802), the Natural Science Foundation of Fujian Province (Nos. 2020J05104 and 2020J06012), and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Nos. 2021ZZ129 and 2021ZZ130).

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