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Erratum

Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors

Yan Li1, Xinru Ma1, Hongwei Bao1, Jian Zhou1,2( ), Fei Ma1 ( ), Jingbo Li3( )
State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Center for Alloy Innovation and Design, Xi’an Jiaotong University, Xi’an 710049, China
Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
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The online version of the original article can be found at:
https://doi.org/10.1007/s12274-022-5011-1

Keywords

III-V semiconductorsHSE06 hybrid functionalMexican-hat-shape bandsmagnetismtopological bands

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Nano Research
Volume 16 Issue 2,
February 2023
Pages 3604-3604
DOI: 10.1007/s12274-022-5216-3

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Cite this article:
Li Y, Ma X, Bao H, et al. Erratum to: Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors. Nano Research, 2023, 16(2): 3604. https://doi.org/10.1007/s12274-022-5216-3

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Published: 09 November 2022
© Tsinghua University Press 2022