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Research Article

On the voltage behavior of quantum dot light-emitting diode

Xiangwei Qu1,2,§, Jingrui Ma1,2,§, Pai Liu1,2, Kai Wang1,2, Xiao Wei Sun1,2( )
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

§ Xiangwei Qu and Jingrui Ma contributed equally to this work.

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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-023-6053-8

Abstract

The origin of the efficiency drop of quantum dot light-emitting diode (QLED) under consecutive voltage sweeps is still a puzzle. In this work, we report the voltage sweep behavior of QLED. We observed the efficiency drop of red QLED with ZnMgO electron transport layer (ETL) under consecutive voltage sweeps. In contrast, the efficiency increases for ZnO ETL device. By analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles, we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO nanoparticles. For ZnO device, the efficiency raise is due to suppressed electron leakage. The hole leakage also causes rapid lifetime degradation of ZnMgO device. However, the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf aging. Our work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED.

Graphical Abstract

We observe distinct voltage sweep behavior of red quantum dot light-emitting diode with different electron transport layer. The efficiency drop of ZnMgO device is related to hole leakage mediated by trap state on ZnMgO nanoparticles, while it raises for ZnO device due to suppressed electron leakage.

Keywords

quantum dot light-emitting diodevoltage sweep behaviorefficiency drophole leakage current

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Nano Research
Volume 16 Issue 4,
April 2023
Pages 5511-5516
DOI: 10.1007/s12274-022-5106-8

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Cite this article:
Qu X, Ma J, Liu P, et al. On the voltage behavior of quantum dot light-emitting diode. Nano Research, 2023, 16(4): 5511-5516. https://doi.org/10.1007/s12274-022-5106-8
Topics:
Light emitting diodes

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Received: 05 August 2022
Revised: 04 September 2022
Accepted: 26 September 2022
Published: 12 October 2022
© Tsinghua University Press 2022