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Nano Research 2023, 16(2): 3358-3363 https://doi.org/10.1007/s12274-022-5009-8
Research Article | Issue | Published: 21 October 2022

Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ

Show Author's Information Yanhui Hou1,§,  Ziqiang Xu1,§,  Yan Shao2,  Linlu Wu3,  Zhongliu Liu2,  Genyu Hu1,  Wei Ji3,  Jingsi Qiao1( ),  Xu Wu1( ),  Hong-Jun Gao2,  Yeliang Wang1( )
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China

§ Yanhui Hou and Ziqiang Xu contributed equally to this work.

Keywords:
grain boundary, scanning tunneling microscopy (STM), PtSe2, band alignment, organic-two-dimensional (2D) heterostructure
Topics:
DepositionNanostructuresScanning tunneling microscopy
Cite this article:
Hou Y, Xu Z, Shao Y, et al. Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ. Nano Research, 2023, 16(2): 3358-3363. https://doi.org/10.1007/s12274-022-5009-8
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Abstract Full text Electronic supplementary material About this article

Grain boundaries in two-dimensional (2D) semiconductors generally induce distorted band alignment and interfacial charge, which impair their electronic properties for device applications. Here, we report the improvement of band alignment at the grain boundaries of PtSe2, a 2D semiconductor, with selective adsorption of a presentative organic acceptor, tetracyanoquinodimethane (TCNQ). TCNQ molecules show selective adsorption at the PtSe2 grain boundary with strong interfacial charge. The adsorption of TCNQ distinctly improves the band alignment at the PtSe2 grain boundaries. With the charge transfer between the grain boundary and TCNQ, the local charge is inhibited, and the band bending at the grain boundary is suppressed, as revealed by the scanning tunneling microscopy and spectroscopy (STM/S) results. Our finding provides an effective method for the advancement of the band alignment at the grain boundary by functional molecules, improving the electronic properties of 2D semiconductors for their future applications.


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Electronic supplementary material
About this article

Improving the band alignment at PtSe2 grain boundaries with selective adsorption of TCNQ

Show Author's information Yanhui Hou1,§, Ziqiang Xu1,§, Yan Shao2, Linlu Wu3, Zhongliu Liu2, Genyu Hu1, Wei Ji3, Jingsi Qiao1( ), Xu Wu1( ), Hong-Jun Gao2, Yeliang Wang1( )
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China

§ Yanhui Hou and Ziqiang Xu contributed equally to this work.

Abstract

Grain boundaries in two-dimensional (2D) semiconductors generally induce distorted band alignment and interfacial charge, which impair their electronic properties for device applications. Here, we report the improvement of band alignment at the grain boundaries of PtSe2, a 2D semiconductor, with selective adsorption of a presentative organic acceptor, tetracyanoquinodimethane (TCNQ). TCNQ molecules show selective adsorption at the PtSe2 grain boundary with strong interfacial charge. The adsorption of TCNQ distinctly improves the band alignment at the PtSe2 grain boundaries. With the charge transfer between the grain boundary and TCNQ, the local charge is inhibited, and the band bending at the grain boundary is suppressed, as revealed by the scanning tunneling microscopy and spectroscopy (STM/S) results. Our finding provides an effective method for the advancement of the band alignment at the grain boundary by functional molecules, improving the electronic properties of 2D semiconductors for their future applications.

Keywords: grain boundary, scanning tunneling microscopy (STM), PtSe2, band alignment, organic-two-dimensional (2D) heterostructure

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Publication history
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Acknowledgements

Publication history

Received: 24 June 2022
Revised: 09 August 2022
Accepted: 03 September 2022
Published: 21 October 2022
Issue date: February 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

The authors gratefully acknowledge financial support from the National Key Research and Development Program of China (Nos. 2021YFA1400100, 2020YFA0308800, and 2019YFA0308000), the National Natural Science Foundation of China (Nos. 92163206 and 62171035), the Beijing Nova Program from Beijing Municipal Science & Technology Commission (No. Z211100002121072), and the Beijing Natural Science Foundation (Nos. Z190006 and 4192054). Calculations were performed at the Physics Lab of High-Performance Computing of Renmin University of China, and Beijing Super Cloud Computing Center.

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