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Nano Research 2023, 16(1): 1651-1669 https://doi.org/10.1007/s12274-022-5008-9
Review Article | Issue | Published: 15 November 2022

Black-phosphorus-based junctions and their optoelectronic device applications

Show Author's Information Kunchan Wang§,  Zhuoyang He§,  Xinyue Li§,  Ke Xu,  Qingping Zhou,  Xiaowo Ye,  Teng Zhang,  Shenghao Jiang,  Yanming Zhang,  Bei Hu,  Changxin Chen( )
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China

§ Kunchan Wang, Zhuoyang He, and Xinyue Li contributed equally to this work.

Keywords:
heterojunction, optoelectronic device, Schottky junction, two-dimensional (2D) semiconductor, black phosphorus (BP), p–n homojunction
Topics:
Electron devicesLayered semiconductorsNarrow band gap semiconductors Semiconductor junctions
Cite this article:
Wang K, He Z, Li X, et al. Black-phosphorus-based junctions and their optoelectronic device applications. Nano Research, 2023, 16(1): 1651-1669. https://doi.org/10.1007/s12274-022-5008-9
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Abstract Full text About this article

Black phosphorus (BP) has attracted significant attention owing to its unique structure and preeminent photoelectric properties, which can be utilized to create novel junctions. Based on different BP-based junctions, versatile optoelectronic devices have been fabricated and investigated in recent years, providing a fertile library for the characteristics of BP-based junctions and their optoelectronic applications. This review summarizes diverse BP-based junctions and their optoelectronic device applications. We firstly introduce the structure and properties of BP. Then, we emphatically describe the formation, properties, and optoelectronic device applications of the BP-based junctions including heterojunctions of BP and other two-dimensional (2D) semiconductors, BP p–n homojunctions, and BP/metal Schottky junctions. Finally, the challenge and prospect of the development and application of BP-based junctions are discussed. This timely review gives a snapshot of recent research breakthroughs in BP-based junctions and optoelectronic devices based on them, which is expected to provide a comprehensive vision for the potential of BP in the optoelectronic field.


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About this article

Black-phosphorus-based junctions and their optoelectronic device applications

Show Author's information Kunchan Wang§, Zhuoyang He§, Xinyue Li§, Ke Xu, Qingping Zhou, Xiaowo Ye, Teng Zhang, Shenghao Jiang, Yanming Zhang, Bei Hu, Changxin Chen( )
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China

§ Kunchan Wang, Zhuoyang He, and Xinyue Li contributed equally to this work.

Abstract

Black phosphorus (BP) has attracted significant attention owing to its unique structure and preeminent photoelectric properties, which can be utilized to create novel junctions. Based on different BP-based junctions, versatile optoelectronic devices have been fabricated and investigated in recent years, providing a fertile library for the characteristics of BP-based junctions and their optoelectronic applications. This review summarizes diverse BP-based junctions and their optoelectronic device applications. We firstly introduce the structure and properties of BP. Then, we emphatically describe the formation, properties, and optoelectronic device applications of the BP-based junctions including heterojunctions of BP and other two-dimensional (2D) semiconductors, BP p–n homojunctions, and BP/metal Schottky junctions. Finally, the challenge and prospect of the development and application of BP-based junctions are discussed. This timely review gives a snapshot of recent research breakthroughs in BP-based junctions and optoelectronic devices based on them, which is expected to provide a comprehensive vision for the potential of BP in the optoelectronic field.

Keywords: heterojunction, optoelectronic device, Schottky junction, two-dimensional (2D) semiconductor, black phosphorus (BP), p–n homojunction

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Publication history
Copyright
Acknowledgements

Publication history

Received: 18 May 2022
Revised: 29 August 2022
Accepted: 04 September 2022
Published: 15 November 2022
Issue date: January 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China for Excellent Young Scholars (No. 61622404), the National Natural Science Foundation of China (No. 62074098), Chang Jiang (Cheung Kong) Scholars Program of Ministry of Education of China (No. Q2017081). The authors are also grateful to Dr. Xiaoming Yang and Dr. Lijuan Zhang at Zhejiang Fulai New Materials Co., Ltd. and Zhejiang Fulai New Materials Co., Ltd. for their support. The authors thank the Center for Advanced Electronic Materials and Devices (AEMD) at Shanghai Jiao Tong University for the discussion and support on device processes.

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