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Nano Research 2023, 16(2): 3415-3421 https://doi.org/10.1007/s12274-022-4945-7
Research Article | Issue | Published: 30 September 2022

Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films

Show Author's Information Jihyung Seo1,§,  Eunbin Son1,§,  Jiha Kim1,  Sun-Woo Kim2,3,  Jeong Min Baik2,3( ),  Hyesung Park1( )
Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea

§ Jihyung Seo and Eunbin Son contributed equally to this work.

Keywords:
transition metal dichalcogenides, substitutional doping, doping concentration, reaction promoter, wafer-scale growth
Topics:
Semiconductor doping
Cite this article:
Seo J, Son E, Kim J, et al. Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films. Nano Research, 2023, 16(2): 3415-3421. https://doi.org/10.1007/s12274-022-4945-7
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Abstract Full text Electronic supplementary material About this article

Substitutional atomic doping of transition metal dichalcogenides (TMDs) in the chemical vapor deposition (CVD) process is a promising and effective strategy for modifying their physicochemical properties. However, the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors. Moreover, the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging. Herein, we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium (V) doping in the MoS2 lattice with excellent doping uniformity and stability. The lateral growth of the host MoS2 lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter. The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS2 monolayer film with excessively high doping concentrations. The excellent wafer-scale uniformity of the highly V-doped MoS2 film was confirmed through a series of microscopic, spectroscopic, and electrical analyses.


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Electronic supplementary material
About this article

Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films

Show Author's information Jihyung Seo1,§, Eunbin Son1,§, Jiha Kim1, Sun-Woo Kim2,3, Jeong Min Baik2,3( ), Hyesung Park1( )
Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea

§ Jihyung Seo and Eunbin Son contributed equally to this work.

Abstract

Substitutional atomic doping of transition metal dichalcogenides (TMDs) in the chemical vapor deposition (CVD) process is a promising and effective strategy for modifying their physicochemical properties. However, the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors. Moreover, the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging. Herein, we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium (V) doping in the MoS2 lattice with excellent doping uniformity and stability. The lateral growth of the host MoS2 lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter. The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS2 monolayer film with excessively high doping concentrations. The excellent wafer-scale uniformity of the highly V-doped MoS2 film was confirmed through a series of microscopic, spectroscopic, and electrical analyses.

Keywords: transition metal dichalcogenides, substitutional doping, doping concentration, reaction promoter, wafer-scale growth

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Publication history
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Acknowledgements

Publication history

Received: 19 June 2022
Revised: 08 August 2022
Accepted: 22 August 2022
Published: 30 September 2022
Issue date: February 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korea government (MSIT) (Nos. 2019R1A2C1009025 and 2022R1A4A2000823) and 2022 research Fund (No. 1.220024.01) of Ulsan National Institute of Science & Technology (UNIST).

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