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Nano Research 2023, 16(2): 3304-3311 https://doi.org/10.1007/s12274-022-4931-0
Research Article | Issue | Published: 09 November 2022

Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection

Show Author's Information Huanran Li1,  Su You1,  Yongqiang Yu2,  Lin Ma1,  Li Zhang1,  Qing Yang1,3( )
Hefei National Research Center of Physical Sciences at the Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion (LNEC), University of Science and Technology of China (USTC), Hefei 230026, China
Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province School of Electrical Science and Applied Physics, Hefei University of Technology (HFUT), Hefei 230009, China
Nano Science and Technology Institute, University of Science and Technology of China (USTC), Suzhou 215123, China
Keywords:
Ga/GaSb nanostructure, metal-semiconductor heterojunction, narrow bandgap semiconductor, solution–liquid–solid (SLS) growth model, GaSb/Si heterojunction photodetector, hybrid nanostructured photodetector, infrared photodetection
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Nanostructures
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Li H, You S, Yu Y, et al. Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection. Nano Research, 2023, 16(2): 3304-3311. https://doi.org/10.1007/s12274-022-4931-0
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Abstract Full text Electronic supplementary material About this article

Gallium antimonide (GaSb)-based nanostructures have been reported via various vapor-phase synthetic routes while there is not a report on the growth of GaSb nanostructures via a complete one-step solution-phase synthetic strategy. Herein we report the design and synthesis of tadpole-like Ga/GaSb nanostructures by a one-step solution-phase synthetic route typically from the precursors of commercial triphenyl antimony (Sb(Ph)3) and trimethylaminogallium (Ga(NMe2)3) at 260 °C in 1-octadecene. The GaSb nanocrystals are grown based on a solution–liquid–solid (SLS) mechanism with zinc blende phase, and their size and shape can be controlled in the procedures via manipulating the reaction conditions. Meanwhile, the tadpole-like Ga/GaSb nanostructures can be applied for the fabrication of a GaSb/Si nanostructured heterojunction-like photodetector over silicon wafer, which demonstrates excellent photoresponse and detection performances from wavelength of 405 to 1,064 nm with high photoresponding rate. Typically, the photodetector exhibits a high responsivity of 18.9 A·W−1, a superior detectivity of 1.1 × 1013 Jones, and an ultrafast response speed of 44 ns. The present work provides a new strategy to group III–V antimonide-based semiconducting nanostructures that are capable for the fabrication of photodetector with broadband, high-detectivity, and high-speed photodetecting performances.


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Electronic supplementary material
About this article

Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection

Show Author's information Huanran Li1, Su You1, Yongqiang Yu2, Lin Ma1, Li Zhang1, Qing Yang1,3( )
Hefei National Research Center of Physical Sciences at the Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion (LNEC), University of Science and Technology of China (USTC), Hefei 230026, China
Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province School of Electrical Science and Applied Physics, Hefei University of Technology (HFUT), Hefei 230009, China
Nano Science and Technology Institute, University of Science and Technology of China (USTC), Suzhou 215123, China

Abstract

Gallium antimonide (GaSb)-based nanostructures have been reported via various vapor-phase synthetic routes while there is not a report on the growth of GaSb nanostructures via a complete one-step solution-phase synthetic strategy. Herein we report the design and synthesis of tadpole-like Ga/GaSb nanostructures by a one-step solution-phase synthetic route typically from the precursors of commercial triphenyl antimony (Sb(Ph)3) and trimethylaminogallium (Ga(NMe2)3) at 260 °C in 1-octadecene. The GaSb nanocrystals are grown based on a solution–liquid–solid (SLS) mechanism with zinc blende phase, and their size and shape can be controlled in the procedures via manipulating the reaction conditions. Meanwhile, the tadpole-like Ga/GaSb nanostructures can be applied for the fabrication of a GaSb/Si nanostructured heterojunction-like photodetector over silicon wafer, which demonstrates excellent photoresponse and detection performances from wavelength of 405 to 1,064 nm with high photoresponding rate. Typically, the photodetector exhibits a high responsivity of 18.9 A·W−1, a superior detectivity of 1.1 × 1013 Jones, and an ultrafast response speed of 44 ns. The present work provides a new strategy to group III–V antimonide-based semiconducting nanostructures that are capable for the fabrication of photodetector with broadband, high-detectivity, and high-speed photodetecting performances.

Keywords: Ga/GaSb nanostructure, metal-semiconductor heterojunction, narrow bandgap semiconductor, solution–liquid–solid (SLS) growth model, GaSb/Si heterojunction photodetector, hybrid nanostructured photodetector, infrared photodetection

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Publication history
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Acknowledgements

Publication history

Received: 02 July 2022
Revised: 01 August 2022
Accepted: 17 August 2022
Published: 09 November 2022
Issue date: February 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. U1932150 and 21571166) and Anhui Provincial Natural Science Foundation (No. 1908085QB72).

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