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Nano Research 2023, 16(1): 1304-1312 https://doi.org/10.1007/s12274-022-4806-4
Research Article | Issue | Published: 17 September 2022

Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications

Show Author's Information Fu Huang1,  Feier Fang1,  Yue Zheng1,  Qi You1,  Henan Li2,  Shaofan Fang1,  Xiangna Cong1,  Ke Jiang1,  Ye Wang3,  Cheng Han1( ),  Wei Chen4,5,6,  Yumeng Shi2( )
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Department of Physics, National University of Singapore, Singapore 117542, Singapore
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
Keywords:
neuromorphic computing, thin-film transistors, artificial optoelectronic synapse, monocrystalline Cs2AgBiBr6, ultraviolet-to-visible
Topics:
Semiconducting films Thin film transistors
Cite this article:
Huang F, Fang F, Zheng Y, et al. Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications. Nano Research, 2023, 16(1): 1304-1312. https://doi.org/10.1007/s12274-022-4806-4
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Abstract Full text Electronic supplementary material About this article

Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons, such as light perception and image processing. Herein, we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light, which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide (IGZO) thin film. As compared with pure IGZO, the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices, which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO. A variety of synaptic behaviors are realized on the fabricated thin-film transistors, including excitatory postsynaptic current, paired pulse facilitation, short-term, and long-term plasticity. Furthermore, an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices, and an accuracy rate up to 83.8% ± 1.2% for pattern recognition is achieved. This finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications.


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Electronic supplementary material
About this article

Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications

Show Author's information Fu Huang1, Feier Fang1, Yue Zheng1, Qi You1, Henan Li2, Shaofan Fang1, Xiangna Cong1, Ke Jiang1, Ye Wang3, Cheng Han1( ), Wei Chen4,5,6, Yumeng Shi2( )
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Department of Physics, National University of Singapore, Singapore 117542, Singapore
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China

Abstract

Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons, such as light perception and image processing. Herein, we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light, which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide (IGZO) thin film. As compared with pure IGZO, the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices, which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO. A variety of synaptic behaviors are realized on the fabricated thin-film transistors, including excitatory postsynaptic current, paired pulse facilitation, short-term, and long-term plasticity. Furthermore, an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices, and an accuracy rate up to 83.8% ± 1.2% for pattern recognition is achieved. This finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications.

Keywords: neuromorphic computing, thin-film transistors, artificial optoelectronic synapse, monocrystalline Cs2AgBiBr6, ultraviolet-to-visible

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Publication history
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Acknowledgements

Publication history

Received: 20 April 2022
Revised: 20 July 2022
Accepted: 25 July 2022
Published: 17 September 2022
Issue date: January 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

Shi Y. M. and Han C. acknowledge the support from the National Natural Science Foundation of China (Nos. 61874074 and 62004128), the Fundamental Research Foundation of Shenzhen (Nos. JCYJ20170817101100705 and JCYJ20190808152607389) and the Key Project of Department of Education of Guangdong Province (No. 2016KZDXM008). Li H. N. acknowledges the support from the Natural Science Foundation of SZU (No. 2017011) and the Science and Technology Project of Shenzhen (No. JCYJ20170817100111548). This research is supported by Singapore Ministry of Education under its AcRF Tier 2 (No. MOE-T2EP50220-0001), the Shenzhen Peacock Plan (No. KQTD2016053112042971), and the postgraduate innovation development fund project of Shenzhen University (No. 315-0000470527).

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