1151
Views
9
Crossref
11
WoS
8
Scopus
0
CSCD
As a typical two-dimensional material, graphitic carbon nitride (g-CN) has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, the absence of a feasible route toward large-area and high-quality films hinders its development in optoelectronics. Herein, high-quality g-CN films have been grown on Si substrate via a vapor-phase transport-assisted condensation method. The g-CN/Si heterojunction shows an obvious response to ultraviolet–visible-near infrared photons with a responsivity of 133 A·W−1, which is two orders of magnitude higher than the best value ever reported for g-CN photodetectors. A position-sensitive detector (PSD) has been developed using the lateral photovoltaic effect of the g-CN/Si heterojunction. The PSD shows a wide response spectrum ranging from 300 to 1,100 nm, and a position sensitivity and rise/decay time of 395 mV·mm−1 and 3.1/50 μs, respectively. Moreover, the application of the g-CN/Si heterojunction photodetector in trajectory tracking and acoustic detection has been realized for the first time. This work unveils the potential of g-CN for large-area photodetectors, and prospects for their applications in trajectory tracking and acoustic detection.
This work was financially supported by Henan Center for Outstanding Overseas Scientists (No. GZS201903), the National Natural Science Foundation of China (Nos. 61804136, 11974317, and 62027816), Henan Science Fund for Distinguished Young Scholars (No. 212300410020), Key Project of Henan Higher Education (No. 21A140001), and the Zhengzhou University Physics Discipline Improvement Program.