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Research Article

Preparation of spatially uniform monolayer FeSexTe1−x (0 < x ≤ 1) by topotactic reaction

Zhongxu Wei1,2Cui Ding3,2Yujie Sun1Lili Wang2( )Qi-Kun Xue1,2,3( )
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 10008, China
Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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Graphical Abstract

Monolayer FeSexTe1−x has attracted extensive attention due to its enhanced superconductivity and co-existed topological state but still faces significant synthetic challenges. Here, we successfully fabricated monolayer FeSexTe1−x (0 < x ≤ 1) films with atomic-level uniformity of element distribution and well-defined superconducting gaps of 15 meV by the topotactic reaction.

Abstract

Spatially uniform high-temperature superconducting films are highly desirable for exploring novel properties and popularizing applications. To improve the uniformity, we fabricate monolayer FeSexTe1x (0 < x ≤ 1) films on SrTiO3(001) by topotactic reaction of monolayer FeTe films with selenium. Using in situ low-temperature scanning tunneling microscopy/spectroscopy, we demonstrate atomic-level uniformity of element distribution and well-defined superconducting gaps of ~ 15 meV in FeSexTe1−x films. In particular, the monolayer FeSe films exhibit fewer line defects and higher superfluid density as evidenced by sharper coherence peaks than those prepared by the co-evaporation method. Our results provide a promising way to optimize sample quality and lay a foundation for studying new physics and drawing reliable conclusions.

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Nano Research
Pages 1712-1716
Cite this article:
Wei Z, Ding C, Sun Y, et al. Preparation of spatially uniform monolayer FeSexTe1−x (0 < x ≤ 1) by topotactic reaction. Nano Research, 2023, 16(1): 1712-1716. https://doi.org/10.1007/s12274-022-4718-3
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Received: 17 May 2022
Revised: 23 June 2022
Accepted: 29 June 2022
Published: 02 September 2022
© Tsinghua University Press 2022
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